A power amplification circuit can include an input impedance matching circuit associated with one or more frequency bands of a plurality of frequency bands. The power amplification circuit can include a transistor with respective input coupled to an output of the input impedance matching circuit. The power amplification circuit can include a plurality of output impedance matching circuits. Each output impedance matching circuit can be associated with a respective frequency band of the plurality of frequency bands. The power amplification circuit can include a single pole multi-throw (SPMT) switch having an input terminal connected to an output of the transistor and a plurality of output terminals. Each output terminal of the SPMT switch can be connected to a corresponding output impedance matching circuit of the plurality of output impedance matching circuits.

A transmission and reception module includes a substrate including a transmission signal input terminal, a reception signal output terminal, and an antenna terminal, a duplexer that is provided on the substrate, outputs a transmission signal input from the transmission signal input terminal to the antenna terminal, and outputs a reception signal input from the antenna terminal to the reception signal output terminal, a first inductor included in a first matching circuit provided between the duplexer and the antenna terminal, and a second inductor included in a second matching circuit provided between the duplexer and the reception signal output terminal. On the substrate, a winding axis direction of a conductor of the first inductor and a winding axis direction of a conductor of the second inductor are different from each other.

Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

A switchable reactance unit includes an RF terminal configured to connect to a transmission line for transmitting a signal at a frequency in a range of 1 - 200 MHz, and a switching arrangement comprising a plurality of switching elements used in parallel. Each switching element has a control terminal, and is connected to the RF terminal via at least one individual reactance assigned to the switching element and connected in series with the switching element. The switching elements are controllable or controlled via their control terminals in such a way that they switch simultaneously.

A frequency division duplex (FDD) first band includes a first downlink operating band and a first uplink operating band. An FDD second band includes a second downlink operating band and a second uplink operating band. In the FDD first band and the FDD second band, (1) the first downlink operating band, second downlink operating band, first uplink operating band, and second uplink operating band are positioned in order from lowest to highest frequency. The frequency range of the first uplink operating band and that of the second uplink operating band do not overlap each other. A filter is formed in or on a first substrate having piezoelectric properties and has a pass band including the first and second uplink operating bands.

In one embodiment, a system includes an RF source and an RF impedance matching circuit receiving RF power from the RF source. The matching circuit includes at least one variable reactance element, a sensor operably coupled to a component of the matching circuit, and a control circuit. The control circuit receives a signal from the sensor indicative of a parameter value. Upon determining the parameter value meets a first predetermined condition, the control circuit transmits a control signal to the RF source causing the RF source to carry out a power control scheme. The power control scheme causes the RF source to reduce or maintain the RF power without turning off the RF power.

In one embodiment, a system includes an RF source and an RF impedance matching circuit receiving RF power from the RF source. The matching circuit includes at least one variable reactance element, a sensor operably coupled to a component of the matching circuit, and a control circuit. The control circuit receives a signal from the sensor indicative of a parameter value. Upon determining the parameter value meets a first predetermined condition, the control circuit transmits a control signal to the RF source causing the RF source to carry out a power control scheme. The power control scheme causes the RF source to reduce or maintain the RF power without turning off the RF power.

A high frequency power supply alternately outputs a first AC voltage and a second AC voltage to a plasma generator. The amplitudes of the first AC voltage and the second AC voltage are different from each other. An impedance adjustment device is disposed in midway of the transmission line of the first AC voltage and the second AC voltage. When the AC voltage output from the high frequency power supply is switched to a first AC voltage, a microcomputer changes the capacitance of a variable capacitor circuit to a first target value. When the AC voltage output from the high frequency power supply is switched to a second AC voltage, the microcomputer changes the capacitance of the variable capacitor circuit to a second target value.

A high frequency power supply alternately outputs a first AC voltage and a second AC voltage to a plasma generator. The amplitudes of the first AC voltage and the second AC voltage are different from each other. An impedance adjustment device is disposed in midway of the transmission line of the first AC voltage and the second AC voltage. When the AC voltage output from the high frequency power supply is switched to a first AC voltage, a microcomputer changes the capacitance of a variable capacitor circuit to a first target value. When the AC voltage output from the high frequency power supply is switched to a second AC voltage, the microcomputer changes the capacitance of the variable capacitor circuit to a second target value.