A resonator comprising a magnetoelastic body having a mass load portion and an active resonating portion can be used in implementations such as a security tag. The resonator includes a mass at the mass load portion of the magnetoelastic body. Displacement of the magnetoelastic body is configured to occur at both the mass load portion and the active resonating portion. A strain at the active resonating portion during displacement is configured to be greater than a strain at the mass load portion during displacement.

A RF antenna comprises a quartz resonator having electrodes disposed thereon with a magnetostrictive film disposed on the quartz resonator either on, partially under or adjacent at least one of the electrodes. A RF antenna having a magnetostrictive film may be made by patterning selected portions of a top surface of the quartz wafer for deposition of electrode metal and deposition of the magnetostrictive film and depositing the electrode metal and the magnetostrictive film; temporarily bonding the quartz wafer to a handle wafer; thinning the quartz wafer to a desired thickness; etching the quartz wafer to define the outlines of at least one quartz resonator bearing the electrode metal and the magnetostrictive film; patterning selected portions of a bottom surface the at least one quartz resonator for deposition of electrode metal and at least one bond pad and depositing the electrode metal and the at least one bond pad; bonding the at least one quartz resonator to a substrate wafer; and releasing the at least one quartz resonator from the handle wafer.

A resonator comprising a magnetoelastic body having a mass load portion and an active resonating portion can be used in implementations such as a security tag. The resonator includes a mass at the mass load portion of the magnetoelastic body. Displacement of the magnetoelastic body is configured to occur at both the mass load portion and the active resonating portion. A strain at the active resonating portion during displacement is configured to be greater than a strain at the mass load portion during displacement.

A resonator comprising a magnetoelastic body having a mass load portion and an active resonating portion can be used in implementations such as a security tag. The resonator includes a mass at the mass load portion of the magnetoelastic body. Displacement of the magnetoelastic body is configured to occur at both the mass load portion and the active resonating portion. A strain at the active resonating portion during displacement is configured to be greater than a strain at the mass load portion during displacement.

Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

A RF antenna or sensor comprising substrate with at least a pair of resonators bonded thereto, whereon a first one of the at least a pair of resonators is coated with a magnetostrictive film and a second one of the at least a pair of resonators is not coated with a magnetostrictive film. The resonators are preferably connected to sustaining circuits to form oscillators and the oscillators a preferably used within a phase lock loop to detect the magnetic component of an incident RF field with a bandwidth determined by the phase lock loop. Also disclosed is a method of making a RF sensor or antenna comprises providing a substrate of a semiconductor material, simultaneously forming two resonators on the substrate, and during the forming of the resonators a resist coating partially covering a first one of the resonators and completely covering a second one of the resonators is applied. Then, a magnetostrictive material is deposited to regions not covered by the resist coating. Thereafter, the resist coating is removed thereby leaving the magnetostrictive material deposited on only one of the two resonators.

A RF antenna or sensor comprising substrate with at least a pair of resonators bonded thereto, whereon a first one of the at least a pair of resonators is coated with a magnetostrictive film and a second one of the at least a pair of resonators is not coated with a magnetostrictive film. The resonators are preferably connected to sustaining circuits to form oscillators and the oscillators a preferably used within a phase lock loop to detect the magnetic component of an incident RF field with a bandwidth determined by the phase lock loop. Also disclosed is a method of making a RF sensor or antenna comprises providing a substrate of a semiconductor material, simultaneously forming two resonators on the substrate, and during the forming of the resonators a resist coating partially covering a first one of the resonators and completely covering a second one of the resonators is applied. Then, a magnetostrictive material is deposited to regions not covered by the resist coating. Thereafter, the resist coating is removed thereby leaving the magnetostrictive material deposited on only one of the two resonators.

A filter including a piezoelectric substrate; a surface acoustic wave (SAW) device on the piezoelectric substrate and including unequally spaced interdigitated input and output transducer electrodes of unequal widths, wherein the input transducer electrodes are to convert an incoming radio frequency (RF) electrical signal into surface acoustic waves; a SAW propagation path between the input and output transducer electrodes; and a magnetostrictive film in the SAW propagation path to filter the surface acoustic waves that are at a ferromagnetic resonance frequency of the magnetostrictive film, wherein the output transducer electrodes are to convert the filtered surface acoustic waves into an outgoing electrical RF signal. The SAW device may operate in a wide-band pass configuration. The wide-band pass configuration result in a transmission of frequencies up to 60 dB. The magnetostrictive film may include a ferromagnetic material. The interdigitated input and output transducer electrodes may include unequal widths between adjacent electrodes.

A filter including a piezoelectric substrate; a surface acoustic wave (SAW) device on the piezoelectric substrate and including unequally spaced interdigitated input and output transducer electrodes of unequal widths, wherein the input transducer electrodes are to convert an incoming radio frequency (RF) electrical signal into surface acoustic waves; a SAW propagation path between the input and output transducer electrodes; and a magnetostrictive film in the SAW propagation path to filter the surface acoustic waves that are at a ferromagnetic resonance frequency of the magnetostrictive film, wherein the output transducer electrodes are to convert the filtered surface acoustic waves into an outgoing electrical RF signal. The SAW device may operate in a wide-band pass configuration. The wide-band pass configuration result in a transmission of frequencies up to 60 dB. The magnetostrictive film may include a ferromagnetic material. The interdigitated input and output transducer electrodes may include unequal widths between adjacent electrodes.