Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

Systems and methods for making a marker. The methods comprise: disposing a resonator with a flat planar cross-sectional profile in a cavity formed in a first substrate partially defining a marker housing; sealing the cavity using a second substrate; placing a first bias element adjacent to the second substrate so that the resonator will be biased by the first bias element when the marker is in use to oscillate at a frequency of a received transmit burst; and using a physical structure in the cavity or a magnetic field passing through the cavity to reduce frictional forces between the resonator and at least the second substrate.

Systems and methods for making a marker. The methods comprise: disposing a resonator with a flat planar cross-sectional profile in a cavity formed in a first substrate partially defining a marker housing; sealing the cavity using a second substrate; placing a first bias element adjacent to the second substrate so that the resonator will be biased by the first bias element when the marker is in use to oscillate at a frequency of a received transmit burst; and using a physical structure in the cavity or a magnetic field passing through the cavity to reduce frictional forces between the resonator and at least the second substrate.

Systems and methods for making a marker. The methods comprise: disposing a resonator with a flat planar cross-sectional profile in a cavity formed in a first substrate partially defining a marker housing; sealing the cavity using a second substrate; placing a first bias element adjacent to the second substrate so that the resonator will be biased by the first bias element when the marker is in use to oscillate at a frequency of a received transmit burst; and using a physical structure in the cavity or a magnetic field passing through the cavity to reduce frictional forces between the resonator and at least the second substrate.

Systems and methods for making a marker. The methods comprise: disposing a resonator with a flat planar cross-sectional profile in a cavity formed in a first substrate partially defining a marker housing; sealing the cavity using a second substrate; placing a first bias element adjacent to the second substrate so that the resonator will be biased by the first bias element when the marker is in use to oscillate at a frequency of a received transmit burst; and using a physical structure in the cavity or a magnetic field passing through the cavity to reduce frictional forces between the resonator and at least the second substrate.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

An antenna apparatus utilizing bulk acoustic wave (BAW) resonances to transfer dynamic strain across multiple layers, which include piezoelectric layers coupled to magnetostrictive material layers. In at least one embodiment, a piezoelectric layer is coupled to a magnetostrictive layer to which another layer having similar acoustic properties as the piezoelectric layer is coupled as an inertial buffer. These multiple layers comprise a strain media to provide a vertical multiferroic coupling which couples electric field, magnetic field, and mechanical fields. Electrodes are coupled to excite one of the piezoelectric layers for injecting acoustic waves into the structure from which electromagnetic radiation is generated out of the plane.

An antenna apparatus utilizing bulk acoustic wave (BAW) resonances to transfer dynamic strain across multiple layers, which include piezoelectric layers coupled to magnetostrictive material layers. In at least one embodiment, a piezoelectric layer is coupled to a magnetostrictive layer to which another layer having similar acoustic properties as the piezoelectric layer is coupled as an inertial buffer. These multiple layers comprise a strain media to provide a vertical multiferroic coupling which couples electric field, magnetic field, and mechanical fields. Electrodes are coupled to excite one of the piezoelectric layers for injecting acoustic waves into the structure from which electromagnetic radiation is generated out of the plane.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.