The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

The present invention relates a power ultrasound device for fluids processing. An ultrasonic resonator comprises: an exciter section having a longitudinal axis and dimensioned to be resonant in a direction along the longitudinal axis when the exciter section is energized with high frequency vibrations; and a radiator section having a connection stub and coupled to the exciter section through the connection stub, wherein the radiator section is configured to receive the vibrations from the exciter section and transmit the vibrations as acoustic waves, wherein an axial length of the exciter section is less than a half-wavelength, wherein the connection stub completes the half-wavelength when coupled to the excited section to allow the ultrasonic resonator operate in resonance at design frequency. The radiator section includes a radiator body having at least three sides to provide a plurality of external radiating surfaces, and two opposite faces having a plurality of orifices formed therein, wherein walls of the orifices are configured to provide a plurality of internal radiating surfaces, and wherein the internal and the external surfaces are configured to transmit the vibrations as acoustic waves.

To provide a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion. The vibration element according to the present technology includes a vibration part in which a plurality of layers is laminated, the plurality of layers including a plurality of first elastic layers that is elastically deformed by electric field application, and at least one second elastic layer that is elastically deformed by magnetic field application. In accordance with the vibration element according to the present technology, a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion can be provided. In accordance with the vibration element according to the present technology, a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion can be provided.

To provide a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion. The vibration element according to the present technology includes a vibration part in which a plurality of layers is laminated, the plurality of layers including a plurality of first elastic layers that is elastically deformed by electric field application, and at least one second elastic layer that is elastically deformed by magnetic field application. In accordance with the vibration element according to the present technology, a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion can be provided. In accordance with the vibration element according to the present technology, a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion can be provided.

An antenna apparatus utilizing bulk acoustic wave (BAW) resonances to transfer dynamic strain across multiple layers, which include piezoelectric layers coupled to magnetostrictive material layers. In at least one embodiment, a piezoelectric layer is coupled to a magnetostrictive layer to which another layer having similar acoustic properties as the piezoelectric layer is coupled as an inertial buffer. These multiple layers comprise a strain media to provide a vertical multiferroic coupling which couples electric field, magnetic field, and mechanical fields. Electrodes are coupled to excite one of the piezoelectric layers for injecting acoustic waves into the structure from which electromagnetic radiation is generated out of the plane.

An antenna apparatus utilizing bulk acoustic wave (BAW) resonances to transfer dynamic strain across multiple layers, which include piezoelectric layers coupled to magnetostrictive material layers. In at least one embodiment, a piezoelectric layer is coupled to a magnetostrictive layer to which another layer having similar acoustic properties as the piezoelectric layer is coupled as an inertial buffer. These multiple layers comprise a strain media to provide a vertical multiferroic coupling which couples electric field, magnetic field, and mechanical fields. Electrodes are coupled to excite one of the piezoelectric layers for injecting acoustic waves into the structure from which electromagnetic radiation is generated out of the plane.

A method of trimming a component is provided in which the component is protected from oxidation or changes in stress after trimming. As part of the method, a protective glass cover is bonded to the surface of a semiconductor substrate prior to trimming (e.g., laser trimming) of a component. This can protect the component from oxidation after trimming, which may change its value or a parameter of the component. It can also protect the component from changes in stress acting on it or on the die adjacent it during packaging, which may also change a value or parameter of the component.

A method of trimming a component is provided in which the component is protected from oxidation or changes in stress after trimming. As part of the method, a protective glass cover is bonded to the surface of a semiconductor substrate prior to trimming (e.g., laser trimming) of a component. This can protect the component from oxidation after trimming, which may change its value or a parameter of the component. It can also protect the component from changes in stress acting on it or on the die adjacent it during packaging, which may also change a value or parameter of the component.

An acoustic wave device includes a first transmission filter; and a second transmission filter stacked on the first transmission filter so that a first functional surface of the first transmission filter and a second functional surface of the second transmission filter face each other at a predetermined distance. The first transmission filter includes a first input terminal and a first acoustic wave resonator. The second transmission filter includes a second input terminal and a second acoustic wave resonator. The first acoustic wave resonator includes a first functional electrode formed on the first functional surface. The second acoustic wave resonator includes a second functional electrode formed on the second functional surface. In a plan view along a thickness direction of the first and second transmission filters, a first formation region of the first functional electrode and a second formation region of the second functional electrode do not overlap each other.

An acoustic wave device includes a first transmission filter; and a second transmission filter stacked on the first transmission filter so that a first functional surface of the first transmission filter and a second functional surface of the second transmission filter face each other at a predetermined distance. The first transmission filter includes a first input terminal and a first acoustic wave resonator. The second transmission filter includes a second input terminal and a second acoustic wave resonator. The first acoustic wave resonator includes a first functional electrode formed on the first functional surface. The second acoustic wave resonator includes a second functional electrode formed on the second functional surface. In a plan view along a thickness direction of the first and second transmission filters, a first formation region of the first functional electrode and a second formation region of the second functional electrode do not overlap each other.