In an embodiment, a tunable stiffness mechanical filter is provided including an input coupler to a negative stiffness structure with a negative stiffness characteristic, and further including a tuner for tuning the negative stiffness structure. An output sensor is located along the negative stiffness structure. The filter may include an amplifier and/or a driver coupled between the output sensor and the negative stiffness structure.

In an embodiment, a tunable stiffness mechanical filter is provided including an input coupler to a negative stiffness structure with a negative stiffness characteristic, and further including a tuner for tuning the negative stiffness structure. An output sensor is located along the negative stiffness structure. The filter may include an amplifier and/or a driver coupled between the output sensor and the negative stiffness structure.

A bulk acoustic wave (BAW) filter includes: a substrate including a first mounting region and a second mounting region which are spaced apart from each other; a first fixing member disposed adjacent to the first mounting region; a second fixing member disposed adjacent to the second mounting region; a Tx filter mounted on the first mounting region and fixed by the first fixing member; and an Rx filter mounted on the second mounting region and fixed by the second fixing member.

The present disclosure relates to a high power and low loss acoustic filter that includes a first node, a second node, a first power bypass path, and a first acoustic resonator (AR) path. The first power bypass path extends between the first node and the second node. The first AR path also extends between the first node and the second node, is in parallel with the first power bypass path, and includes at least one first acoustic resonator that form an acoustic resonator network. Herein, the first AR path has a notch filter response. The first power bypass path and the first AR path form a first filter cell that has a band-pass filter response.

An elastic wave device includes an IDT electrode on a piezoelectric substrate, in which the IDT electrode includes first electrode fingers and second electrode fingers, where a portion in which the first electrode fingers and the second electrode fingers overlap with each other in an elastic wave propagation direction is defined as an intersection region including in a direction in which the first and second electrode fingers extend, a center region located on a center side and first and second edge regions respectively located on both sides of the center region, in the first and second edge regions, grooves defining recess portions are provided on the piezoelectric substrate, the first and second electrode fingers are provided inside of the grooves as the recess portions and are disposed on the piezoelectric substrate in the grooves.

An elastic wave device includes an IDT electrode on a piezoelectric substrate, in which the IDT electrode includes first electrode fingers and second electrode fingers, where a portion in which the first electrode fingers and the second electrode fingers overlap with each other in an elastic wave propagation direction is defined as an intersection region including in a direction in which the first and second electrode fingers extend, a center region located on a center side and first and second edge regions respectively located on both sides of the center region, in the first and second edge regions, grooves defining recess portions are provided on the piezoelectric substrate, the first and second electrode fingers are provided inside of the grooves as the recess portions and are disposed on the piezoelectric substrate in the grooves.

A package for a tunable filter is disclosed. In an embodiment, the tunable filter includes a substrate having a first interconnection plane and a semiconductor device assembled on the substrate in a first component plane, the semiconductor device electrically connected to the first interconnection plane and containing tunable passive components. The filter further includes a control unit arranged in the first component plane, a dielectric layer arranged above the first component plane, a second component plane arranged on the dielectric layer and discrete passive devices arranged in the second component plane and interconnected with the semiconductor device, wherein the tunable passive components are tunable by the control unit.

A compensation circuit reduces the negative effects of antenna-to-antenna coupling between proximately located antennas. The compensation circuit is coupled between first and second antenna ports. A first transmit/receive path extends from radio frequency (RF) circuitry to the first antenna port. A second transmit/receive path extends from the RF circuitry to the second antenna port. Antennas are coupled to each of the antenna ports. The compensation circuit includes negatively coupled first and second inductors, which are coupled in series between the first antenna port and the second antenna port. At least one shunt acoustic resonator is coupled between a fixed voltage node and a common node between the first and second inductors. In operation, the compensation circuit presents a negative capacitance between the first antenna port and the second antenna port over the first frequency range to reduce the effects of the antenna-antenna coupling.

A radio frequency module includes a mount board, an acoustic wave filter, a temperature sensor, and a correction circuit. The mount board has a first principal surface and a second principal surface on opposite sides of the mount board. The acoustic wave filter is disposed on the first principal surface side of the mount board. The temperature sensor is disposed on the second principal surface side of the mount board. The correction circuit corrects a pass band of the acoustic wave filter in accordance with a temperature measured by the temperature sensor.

A radio frequency module includes a mount board, an acoustic wave filter, a temperature sensor, and a correction circuit. The mount board has a first principal surface and a second principal surface on opposite sides of the mount board. The acoustic wave filter is disposed on the first principal surface side of the mount board. The temperature sensor is disposed on the second principal surface side of the mount board. The correction circuit corrects a pass band of the acoustic wave filter in accordance with a temperature measured by the temperature sensor.