A random number generator includes a ring oscillator, an inversion selecting circuit, and controller. The ring oscillator includes an inverter chain having at least one inverter and generates an output signal. The inversion selecting circuit controlling a phase inverter configured to invert a signal of the inverter chain. The controller is configured to operate the inversion selecting circuit to provide an output of the first phase inverter to the inverter chain during a first operation mode to measure a frequency of the ring oscillator and operate the inversion selecting circuit to not provide the output of the phase inverter during a second operation mode for generating a random number.

An integrated circuit includes signal-source circuitry (SSC), an SSC power supply circuit (SSC-PS) and a digitization circuit. The SSC is configured to generate an output signal, which is guaranteed to meet specified electrical parameters provided that a supply voltage to the SSC is within a specified operating voltage range. The SSC-PS is configured to power the SSC with a reduced voltage that is below the specified operating voltage range, thereby causing the output signal to be noisy. The digitization circuit is configured to digitize the noisy output signal so as to generate a respective sequence of random numbers.

An integrated circuit includes signal-source circuitry (SSC), an SSC power supply circuit (SSC-PS) and a digitization circuit. The SSC is configured to generate an output signal, which is guaranteed to meet specified electrical parameters provided that a supply voltage to the SSC is within a specified operating voltage range. The SSC-PS is configured to power the SSC with a reduced voltage that is below the specified operating voltage range, thereby causing the output signal to be noisy. The digitization circuit is configured to digitize the noisy output signal so as to generate a respective sequence of random numbers.

A random noise generator for generating a plurality of random noise samples per clock cycle, the noise samples having a distribution. The random noise generator comprises at least a first comparator unit and a second comparator unit, the first comparator unit configured to generate a first plurality of samples representing a high-probability part of the distribution and the second comparator unit configured to generate a second plurality of samples representing a low-probability part of the distribution; and a random selection unit connected to at least the first comparator unit and the second comparator unit. The random selection unit is configured to receive the first plurality of samples generated by the first comparator unit and the second plurality of samples generated by the second comparator unit, to output a random selection of samples from the first plurality of samples and the second plurality of samples.

A random noise generator for generating a plurality of random noise samples per clock cycle, the noise samples having a distribution. The random noise generator comprises at least a first comparator unit and a second comparator unit, the first comparator unit configured to generate a first plurality of samples representing a high-probability part of the distribution and the second comparator unit configured to generate a second plurality of samples representing a low-probability part of the distribution; and a random selection unit connected to at least the first comparator unit and the second comparator unit. The random selection unit is configured to receive the first plurality of samples generated by the first comparator unit and the second plurality of samples generated by the second comparator unit, to output a random selection of samples from the first plurality of samples and the second plurality of samples.

The present disclosure presents various systems and methods for implementing a physical unclonable function device. One such method comprises providing an integrated circuit having a plurality of set/reset flip flop logic circuits, wherein each of the set/reset flip flop logic circuits enters a metastable state for a particular input sequence. The method includes varying circuit parameters for each of the plurality of set/reset flip flop logic circuits to account for manufacturing variations in the set/reset flip flop logic circuits and enable generating a stable but random output in response to the particular input sequence. Thus, by applying the particular input sequence to the integrated circuit, a unique identifier for the integrated circuit can be derived from an output response of the plurality of set/reset flip flop logic circuits.

A true random number generator circuit includes a ring oscillator and a plurality of sampling circuits. The ring oscillator includes a plurality of series-connected stages coupled together in a ring. An output of a last stage of the ring oscillator is coupled to an input of a first stage of the ring oscillator. A sampling circuit of the plurality of sampling circuits has an input coupled to a node located between two adjacent stages of the plurality of series-connected stages. Every node of the ring oscillator is coupled to a corresponding sampling circuit of the plurality of sampling circuits. In another embodiment, a method for generating a random number is provided.

A true random number generator circuit includes a ring oscillator and a plurality of sampling circuits. The ring oscillator includes a plurality of series-connected stages coupled together in a ring. An output of a last stage of the ring oscillator is coupled to an input of a first stage of the ring oscillator. A sampling circuit of the plurality of sampling circuits has an input coupled to a node located between two adjacent stages of the plurality of series-connected stages. Every node of the ring oscillator is coupled to a corresponding sampling circuit of the plurality of sampling circuits. In another embodiment, a method for generating a random number is provided.

A read-only memory cell array includes a first storage state memory cell and a second storage state memory cell. The first storage state memory cell includes a first transistor and a second transistor. The first transistor is connected to a source line and a word line. The second transistor is connected to the first transistor and a first bit line. The second storage state memory cell includes a third transistor and a fourth transistor. The third transistor is connected to the source line and the word line. The fourth transistor is connected to the third transistor and a second bit line. A gate terminal of the fourth transistor is connected to a gate terminal of the third transistor.

A read-only memory cell array includes a first storage state memory cell and a second storage state memory cell. The first storage state memory cell includes a first transistor and a second transistor. The first transistor is connected to a source line and a word line. The second transistor is connected to the first transistor and a first bit line. The second storage state memory cell includes a third transistor and a fourth transistor. The third transistor is connected to the source line and the word line. The fourth transistor is connected to the third transistor and a second bit line. A gate terminal of the fourth transistor is connected to a gate terminal of the third transistor.