An image sensor may include an array of image sensor pixels. Pixel control circuitry may provide control signals to the array of image sensor pixels. The pixel control circuitry may include a plurality of driver units that each generate a control signal for a different set of image sensor pixels. The control signal generated by each of the driver units may be delayed relative to each other. A voltage-controlled delay line may provide delayed outputs to each of the driver units. Delay lock circuitry coupled to the voltage-controlled delay line may fix the delay exhibited across the delay line using corresponding global and local bias voltages provided to each of the inverters in the delay line.

Embodiments of the disclosure provide a method, apparatus, and computer readable medium for optimizing memory card performance. The method includes: determining a plurality of different preset time intervals, the preset time intervals being determined beginning from clock-cycle starting points; sending test data to a memory card using each of the preset time intervals, respectively; reading from the memory card the test data corresponding to each of the preset time intervals; comparing the test data sent using each of the preset time intervals with the corresponding test data that is read; in response to the sent test data and the read test data being consistent, determining that the preset time interval is valid; determining at least one group of preset time intervals, each of the groups of preset time intervals containing a plurality of valid and successive preset time intervals; determining a group of preset time intervals containing a maximum number of preset time intervals as a target group; determining an average value of all the preset time intervals in the target group as a time interval for writing to the memory card.

A circuit includes a first digital controlled oscillator and a second digital controlled oscillator coupled to the first digital controlled oscillator. A skew detector is connected to determine a skew between outputs of the first digital controlled oscillator and the second digital controlled oscillator, and a decoder is utilized to output a control signal, based on the skew, to modify a frequency of the first digital controlled oscillator using a switched capacitor array to reduce or eliminate the skew. A differential pulse injection oscillator circuit and a pulse injection signal generator circuit are also provided.

A circuit includes a first digital controlled oscillator and a second digital controlled oscillator coupled to the first digital controlled oscillator. A skew detector is connected to determine a skew between outputs of the first digital controlled oscillator and the second digital controlled oscillator, and a decoder is utilized to output a control signal, based on the skew, to modify a frequency of the first digital controlled oscillator using a switched capacitor array to reduce or eliminate the skew. A differential pulse injection oscillator circuit and a pulse injection signal generator circuit are also provided.

A clock generator includes a series of inverting stages; and at least one combinational logic stage. The series of inverting stages is tapped at two or more locations along the series of inverting stages to provide intermediary outputs. A combinational logic stage of the at least one combinational logic stage is coupled to receive two or more of the intermediary outputs and generate a clock signal. Multi-phase, multi-duty cycle, non-overlapping clock signals can be generated by the clock generator based on different combinations of intermediary outputs. The clock signals can be provided to a switching network.

A clock generator includes a series of inverting stages; and at least one combinational logic stage. The series of inverting stages is tapped at two or more locations along the series of inverting stages to provide intermediary outputs. A combinational logic stage of the at least one combinational logic stage is coupled to receive two or more of the intermediary outputs and generate a clock signal. Multi-phase, multi-duty cycle, non-overlapping clock signals can be generated by the clock generator based on different combinations of intermediary outputs. The clock signals can be provided to a switching network.

A method of forming a semiconductor device includes forming a first row of transistors extending in a first direction and including dummy transistors and active transistors. The first row includes, in a sequence from a first end to a second end, at least a first dummy group, a first delay cell, a second delay cell, and a second dummy group. The first dummy group is formed of one or more dummy transistors. The second dummy group is formed of one or more dummy transistors. The first delay cell is formed of active transistors configured as a basic inverter and a float-resistant inverter. The second delay cell is formed of active transistors configured as at least one inverter. The first row is free of dummy transistors between the first delay cell and the second delay cell.

A method of forming a semiconductor device includes forming a first row of transistors extending in a first direction and including dummy transistors and active transistors. The first row includes, in a sequence from a first end to a second end, at least a first dummy group, a first delay cell, a second delay cell, and a second dummy group. The first dummy group is formed of one or more dummy transistors. The second dummy group is formed of one or more dummy transistors. The first delay cell is formed of active transistors configured as a basic inverter and a float-resistant inverter. The second delay cell is formed of active transistors configured as at least one inverter. The first row is free of dummy transistors between the first delay cell and the second delay cell.

A circuit includes a first digital controlled oscillator and a second digital controlled oscillator coupled to the first digital controlled oscillator. A skew detector is connected to determine a skew between outputs of the first digital controlled oscillator and the second digital controlled oscillator, and a decoder is utilized to output a control signal, based on the skew, to modify a frequency of the first digital controlled oscillator using a switched capacitor array to reduce or eliminate the skew. A differential pulse injection oscillator circuit and a pulse injection signal generator circuit are also provided,

A semiconductor device includes a logic circuit capable of storing configuration data. The logic circuit includes a latch circuit, an arithmetic circuit, a delay circuit, and a first output timing generation circuit. The latch circuit has a function of receiving a pulse signal and a reset signal and outputting a first signal. The delay circuit has a function of receiving the first signal and outputting a second signal. The first signal controls power supply to the arithmetic circuit and the delay circuit. The second signal is obtained by delaying the first signal so as to correspond to a delay in a critical path of the arithmetic circuit. The first output timing generation circuit has a function of receiving a third signal obtained by a logical operation on the first signal and the second signal and outputting the reset signal.