Patent classifications
H03K5/13
Methods and apparatus for cross-conduction detection
Methods, apparatus, systems, and articles of manufacture are disclosed for cross-conduction detection. An example apparatus includes a cross detector circuit including a first transistor and a second transistor, the first transistor coupled to a load, a third transistor coupled to a first controlled delay circuit and the first transistor, a fourth transistor coupled to a second controlled delay circuit and to the third transistor at a phase node, and a control circuit coupled to the first controlled delay circuit, the second controlled delay circuit, and the load.
Methods and apparatus for cross-conduction detection
Methods, apparatus, systems, and articles of manufacture are disclosed for cross-conduction detection. An example apparatus includes a cross detector circuit including a first transistor and a second transistor, the first transistor coupled to a load, a third transistor coupled to a first controlled delay circuit and the first transistor, a fourth transistor coupled to a second controlled delay circuit and to the third transistor at a phase node, and a control circuit coupled to the first controlled delay circuit, the second controlled delay circuit, and the load.
LOUDSPEAKER DRIVER SYSTEMS
A system for driving a transducer having a plurality of coils, the system comprising: a modulator for outputting a digital output signal representative of a received analogue input signal at a modulator output; a clock controlled delay element for applying a delay to the digital output signal to generate a first delayed signal at a delay element output; wherein the modulator output is couplable to a first coil of the plurality of the coils of the transducer and the delay element output is couplable to a second coil of the plurality of coils of the transducer.
LOUDSPEAKER DRIVER SYSTEMS
A system for driving a transducer having a plurality of coils, the system comprising: a modulator for outputting a digital output signal representative of a received analogue input signal at a modulator output; a clock controlled delay element for applying a delay to the digital output signal to generate a first delayed signal at a delay element output; wherein the modulator output is couplable to a first coil of the plurality of the coils of the transducer and the delay element output is couplable to a second coil of the plurality of coils of the transducer.
Inverted group delay circuit
An inverted group delay circuit is provided. The inverted group delay circuit can offset a group delay between a pair of signals. In a non-limiting example, the inverted group delay circuit can be configured to offset a group delay (e.g., negative group delay) between a time-variant voltage and a time-variant envelope of an analog signal. More specifically, the inverted group delay circuit can output an inverted time-variant voltage having an opposing phase and time-adjusted relative to the time-variant voltage to thereby offset the group delay between the time-variant voltage and the time-variant envelope. As such, the inverted group delay circuit can be provided in a power management integrated circuit (PMIC) to improve timing alignment between a time-variant voltage(s) and a time-variant analog signal(s) at a power amplifier(s), thus helping to reduce potential amplitude distortion when the analog signal(s) is amplified by the power amplifier(s).
Semiconductor apparatus including clock paths and semiconductor system including the semiconductor apparatus
A semiconductor apparatus includes a first clock path which generates a first output clock signal by delaying a first phase clock signal, and a second clock path which generates a second output clock signal by delaying a second phase clock signal based on a delay compensation signal. The oscillating path generation circuit forms oscillating paths with the first clock path and the second clock path. The delay information generation circuit generates a delay compensation signal based on oscillating signals generated by forming the oscillating paths.
Semiconductor apparatus including clock paths and semiconductor system including the semiconductor apparatus
A semiconductor apparatus includes a first clock path which generates a first output clock signal by delaying a first phase clock signal, and a second clock path which generates a second output clock signal by delaying a second phase clock signal based on a delay compensation signal. The oscillating path generation circuit forms oscillating paths with the first clock path and the second clock path. The delay information generation circuit generates a delay compensation signal based on oscillating signals generated by forming the oscillating paths.
Dynamic address allocation in improved inter-integrated circuit communication
Dynamic address allocation of multiple device instances of an improved inter-integrated circuit (I3C) target device by an I3C controller device is disclosed. A first device instance is configured to receive a command and a clock signal from the I3C controller device, and further receive a first status signal that is indicative of a first device instance ID of the first device instance. The first device instance is further configured to decode the command based on the first status signal and the clock signal, and generate a response that includes the first device instance ID. The I3C controller device is configured to allocate a dynamic address to the first device instance based on the response. The first device instance is then configured to generate and provide a second status signal to a second device instance for facilitating dynamic address allocation of the second device instance.
Dynamic address allocation in improved inter-integrated circuit communication
Dynamic address allocation of multiple device instances of an improved inter-integrated circuit (I3C) target device by an I3C controller device is disclosed. A first device instance is configured to receive a command and a clock signal from the I3C controller device, and further receive a first status signal that is indicative of a first device instance ID of the first device instance. The first device instance is further configured to decode the command based on the first status signal and the clock signal, and generate a response that includes the first device instance ID. The I3C controller device is configured to allocate a dynamic address to the first device instance based on the response. The first device instance is then configured to generate and provide a second status signal to a second device instance for facilitating dynamic address allocation of the second device instance.
INPUT BUFFER CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE HAVING HYSTERESIS FUNCTION
An input buffer circuit includes a reception sensing part that receives an input signal pair to generate an intermediate signal pair, a comparison buffering part that buffers the intermediate signal pair to generate a buffered signal pair, an intrinsic buffered signal of the buffered signal pair being controlled to a first logic state as a level of the intrinsic intermediate signal is higher than a level of the complementary intermediate signal, a complementary buffered signal of the buffered signal pair is controlled to a second logic state as a level of the intrinsic intermediate signal is higher than a level of the complementary intermediate signal, and a hysteresis control part that drives the buffered signal pair to have forward hysteresis by using at least one of the intrinsic buffered signal and the complementary buffered signal.