An electronic control apparatus includes a switching element; an ON-drive constant-current circuit supplying a constant current to the control terminal of the switching element thereby charging the control terminal of the switching element; an OFF-drive switching element discharging electrical charge from the control terminal of the switching element by being turned ON; and a control circuit adapted to control the ON-drive constant-current circuit and the OFF-drive switching element in response to a drive signal being inputted, thereby controlling the voltage of the control terminal of the switching element so as to drive the switching element. The control circuit controls the current control transistor based on the voltage of the current detection resistor and supplies the constant current to the control terminal of the switching element, and detects an abnormality in the ON-drive constant-current circuit based on the voltage of the current detection resistor.

Provided is a switch apparatus including a conductor; a switching device that contacts the conductor on a first surface and switches between a first terminal on the first surface side and a second terminal on a second surface side that is opposite to the first surface; and a control device that contacts the conductor on a third surface and includes a control circuit of the switching device provided on a fourth surface side opposite to the third surface and a first withstand voltage structure that protects the control circuit from excessive voltage added to the conductor. By providing the withstand voltage structure in the control device, it is possible to protect the control circuit.

Provided is a switch apparatus including a conductor; a switching device that contacts the conductor on a first surface and switches between a first terminal on the first surface side and a second terminal on a second surface side that is opposite to the first surface; and a control device that contacts the conductor on a third surface and includes a control circuit of the switching device provided on a fourth surface side opposite to the third surface and a first withstand voltage structure that protects the control circuit from excessive voltage added to the conductor. By providing the withstand voltage structure in the control device, it is possible to protect the control circuit.

Under one aspect, a power Schottky diode includes a cathode; a semiconductor disposed over the cathode, the semiconductor including at least a first region and a second region, the second region defining a guard ring; an anode disposed over the first region and at least a portion of the guard ring, the anode including a metal, a junction between the anode and the first region defining a Schottky barrier; and an oxide disposed over the guard ring. Additionally, the power Schottky diode can include a resistive material disposed over at least a portion of the guard ring and at least a portion of the oxide. The resistive material can inhibit a flow of holes from the guard ring to the anode following a heavy ion strike to the guard ring. The anode further can be disposed over at least a portion of, or the entirety of, the resistive material.

Under one aspect, a power Schottky diode includes a cathode; a semiconductor disposed over the cathode, the semiconductor including at least a first region and a second region, the second region defining a guard ring; an anode disposed over the first region and at least a portion of the guard ring, the anode including a metal, a junction between the anode and the first region defining a Schottky barrier; and an oxide disposed over the guard ring. Additionally, the power Schottky diode can include a resistive material disposed over at least a portion of the guard ring and at least a portion of the oxide. The resistive material can inhibit a flow of holes from the guard ring to the anode following a heavy ion strike to the guard ring. The anode further can be disposed over at least a portion of, or the entirety of, the resistive material.

A method for determining the remaining usability of a semiconductor module in normal use. The semiconductor module is thermally coupled to a cooling device. A predefined electrical load is applied to the semiconductor module while predefined cooling is effected by the cooling device. A temperature of a semiconductor element of the semiconductor module is sensed at least for the predefined electrical load on the semiconductor module. The sensed temperature is compared with a comparison temperature in a first comparison. The comparison temperature is assigned to the predefined electrical load with the predefined cooling, and prediction data for the remaining usability of the semiconductor module in normal use up to a usability end are determined at least in accordance with the first comparison.

A method for determining the remaining usability of a semiconductor module in normal use. The semiconductor module is thermally coupled to a cooling device. A predefined electrical load is applied to the semiconductor module while predefined cooling is effected by the cooling device. A temperature of a semiconductor element of the semiconductor module is sensed at least for the predefined electrical load on the semiconductor module. The sensed temperature is compared with a comparison temperature in a first comparison. The comparison temperature is assigned to the predefined electrical load with the predefined cooling, and prediction data for the remaining usability of the semiconductor module in normal use up to a usability end are determined at least in accordance with the first comparison.

In described examples, a first transistor has: a drain coupled to a source of a depletion-mode transistor; a source coupled to a first voltage node; and a gate coupled to a control node. A second transistor has: a drain coupled to a gate of the depletion-mode transistor; a source coupled to the first voltage node; and a gate coupled through at least one first logic device to an input node. A third transistor has: a drain coupled to the gate of the depletion-mode transistor; a source coupled to a second voltage node; and a gate coupled through at least one second logic device to the input node.

In described examples, a first transistor has: a drain coupled to a source of a depletion-mode transistor; a source coupled to a first voltage node; and a gate coupled to a control node. A second transistor has: a drain coupled to a gate of the depletion-mode transistor; a source coupled to the first voltage node; and a gate coupled through at least one first logic device to an input node. A third transistor has: a drain coupled to the gate of the depletion-mode transistor; a source coupled to a second voltage node; and a gate coupled through at least one second logic device to the input node.

A drive circuit includes: a control section generating a control signal; a first level shift section raising a level of a signal from the control section; a high side drive section controlling a semiconductor device; and a second level shift section lowering a level of a signal from the high side drive section for input to the control section. The high side drive section has an error detection section maintaining an output of an error detection signal when the semiconductor device is in an error status until a release signal is input, the control section has an error handling section outputting the release signal to the high side drive section via the first level shift section when the error detection signal is input via the second level shift section, and the error detection section stops the output of the error detection signal when the release signal is input.