In a general aspect, an apparatus can include a temperature measurement circuit configured to produce a first signal indicating a first operating temperature of a first semiconductor device and a temperature comparison circuit operationally coupled with the temperature measurement circuit. The temperature comparison circuit can be configured to compare the first signal with a second signal indicating a second operating temperature of at least a second semiconductor device and produce a comparison signal indicating whether the indicated first operating temperature is higher, lower or equal to the indicated second operating temperature. The apparatus can also include an adjustment circuit configured to adjust operation of the first semiconductor device based on the comparison signal.

Systems, apparatuses, and methods for efficient operation of a switch arrangement are described. Selectively operating one of a plurality of parallel-connected switches at different times along a period of a periodic waveform may allow for improved efficiency, uniform loss-spreading, and enhanced thermal design of an electronic circuit including use of power switches.

An integrated circuit is provided with an MCU, which is configured to generate a PWM control signal that is free of switching pattern information therein. A current-estimating gate driver is provided, which is responsive to the PWM signal. This gate driver is configured to drive first and second gate terminals of first and second parallel switching devices (within a hybrid switch) with gate signals that establish a second switching pattern within the hybrid switch. These gate driving operations are performed in response to measuring a first voltage associated with a terminal of the hybrid switch when being driven by gate signals that establish a first switching pattern within the hybrid switch that is different from the second switching pattern. The duty cycles of the gate signals associated with the second switching pattern are unequal and the duty cycles of the gate signals associated with the first switching pattern are unequal.

The invention relates to a method (200) and a control device (1) for controlling at least two power semiconductor switches (LHS1 . . . LHSn) connected in parallel for switching a total current (I_ges). The at least two power semiconductor switches (LHS1 . . . LHSn) connected in parallel each have a gate terminal for controlling the respective power semiconductor switch (LHS1 . . . LHS2). An input terminal (EA) for feeding the total current (I_ges), an output terminal (AA) for discharging the total current (I_ges) and a joint control terminal (S) for receiving a joint control signal (SI) that has the state ‘disconnect’ or ‘connect’ are provided. The at least two power semiconductor switches (LHS1 . . . LHSn) connected in parallel are connected to the input terminal (EA) at the input end and to the output terminal (AA) at the output end. At least one ascertainment unit (EE) is designed to receive the joint control signal (SI) at the input end, ascertain at least two individual control signals (SI1 . . . SIn) in accordance with the joint control signal (SI) in order to control the at least two power semiconductor switches (LHS1 . . . LHSn), and output the at least two ascertained individual control signals to the gate terminals of the at least two power semiconductor switches at the output end. The at least two individual control signals (SI1 . . . SIn) each have the state ‘disconnect’ or ‘connect’ and differ at least temporarily.

Disclosed herein is a driver circuit including a first group of transistors provided between first and second nodes and including n of the transistor(s) where n is equal to or greater than one, and a second group of transistors provided in parallel with the first group of transistors and including m of the transistor(s) where m is equal to or greater than one and not equal to n, the m transistors being connected together in series. The n-channel transistor in the first group and at least one of the two n-channel transistors in the second group have their gate connected to an input node.

A method of operating a driver circuit includes receiving a data signal at a first input of an amplification circuit; amplifying, using the amplification circuit, the data signal to produce an output signal through an output pin; attenuating, using a feedback network, the output signal to produce a feedback signal; coupling the feedback signal to a second input of the amplification circuit; detecting, using a control circuit, a fault condition; and decoupling, responsive to detecting the fault condition, the feedback signal from the second input of the amplification circuit. In some embodiments, the driver circuit transmits a fault condition signal to an electronic control unit of an automobile.

Apparatus and associated methods relate to controlling an electric field profile within a drift region of an LDMOS device using biased field plates to deplete majority carriers from a drift region between a body/drift-region metallurgical junction and a drain contact. Such field plates are located in trenches that longitudinally extend within the drift region. Field plates are laterally spaced apart from each other at a distance that permits substantial depletion of majority carriers between adjacent field plates. Trenches have trench bottoms located within a drift-region/substrate metallurgical junction so as to permit substantial depletion of majority carriers between trench bottoms and the drift-region/substrate metallurgical junction. Between adjacent trenches, dopant concentrations can be increased up to a threshold that can be substantially depleted under specified bias conditions. Such control of the electric field profile within the drift region may advantageously optimize a breakdown-voltage/on-resistance characteristic of the LDMOS device.

The invention generally relates to methods and circuits for controlling switching of parallel coupled power semiconductor switching devices (3), for example for use in a power converter. In an example, there is provided a circuit for controlling switching of parallel coupled power semiconductor switching devices (3), the circuit comprising: a plurality of drive modules (2), each said module for controlling a said power semiconductor switching device (3); control circuitry to transmit switch command signals to the modules, each said switch command signal to trigger a said drive module to control a said power semiconductor switching device to switch state; and voltage isolation between the drive modules and the control circuitry, wherein each said drive module for controlling a said device comprises: timing circuitry (22) to compare a switching delay of the device and a reference delay, wherein said switching delay is a time interval between detecting a said switching command signal at the drive module and switching of the device in accordance with the detected switching command signal; and delay circuitry (21) to provide a controllable delay to delay a said triggering by a said switching command signal received at the module subsequent to the detected switching command signal, the delay circuitry configured to control the controllable delay according to a result of said comparison of said switching delay of the device, to thereby reduce a time difference between the reference delay and a said switching delay of the device switching in accordance with the subsequent switching command signal.

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

A differential signal input buffer is disclosed. The differential signal input buffer may receive a differential signal that includes a first signal and a second signal and may be divided into a first section and a second section and. The first section may buffer and/or amplify the first signal based on a first level-shifted second signal. The second section may buffer and/or amplify the second signal based on a first level-shifted first signal. In some implementations, the first section may buffer and/or amplify the first signal based on a second level-shifted second signal. Further, in some implementations, the second section may buffer and/or amplify the second signal based on a second level-shifted first signal.