A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

A microelectronic circuit comprises a plurality of logic units and register circuits arranged into a plurality of processing paths. At least one monitor circuit (404) is associated with a first register circuit (301), said monitor circuit (404) being configured to produce a timing event observation signal as a response to a change in a digital value at an input (D) of the first register circuit (301) that took place later than an allowable time limit defined by a triggering signal (CP) to said first register circuit (301). A first processing path goes through a first logic unit (501) to said first register circuit (301) and is a delay critical processing path due to an amount of delay that it is likely to generate. The microelectronic circuit comprises a controllable data event injection point (503) for controllably generating a change of a digital value propagating to said first logic unit (501) irrespective of what other data is processed on said first processing path. Said microelectronic circuit is configured to freeze a first digital value stored in said first register circuit (301) for a time during which the change generated through said controllable data event injection point (503) propagates to said first register circuit.

A microelectronic circuit comprises a plurality of logic units and register circuits arranged into a plurality of processing paths. At least one monitor circuit (404) is associated with a first register circuit (301), said monitor circuit (404) being configured to produce a timing event observation signal as a response to a change in a digital value at an input (D) of the first register circuit (301) that took place later than an allowable time limit defined by a triggering signal (CP) to said first register circuit (301). A first processing path goes through a first logic unit (501) to said first register circuit (301) and is a delay critical processing path due to an amount of delay that it is likely to generate. The microelectronic circuit comprises a controllable data event injection point (503) for controllably generating a change of a digital value propagating to said first logic unit (501) irrespective of what other data is processed on said first processing path. Said microelectronic circuit is configured to freeze a first digital value stored in said first register circuit (301) for a time during which the change generated through said controllable data event injection point (503) propagates to said first register circuit.

A power module, including a high-side switching element and a low-side switching element connected to form a half bridge circuit, a high-side drive circuit which drives the high-side switching element, a low-side drive circuit which drives the low-side switching element, and a high-side current detection circuit which detects a current of the high-side switching element. The high-side drive circuit includes a high-side variable delay circuit which adjusts, according to a value detected by the high-side current detection circuit, a length of a high-side delay time from a time when a signal is inputted to the high-side drive circuit to a time when the high-side switching element is driven.

A switch with clock-gating control and a method for clock gating a switch are described herein. In one example, the method generally includes detecting a state of one or more input ports and a state of one or more output ports of the switch, determining whether the state of the one or more input ports and the state of the one or more output ports has been stable for a preset number of clock cycles, and gating the switch from a clock signal until the state of the one or more input ports or the state of the one or more output ports change upon determining the states have been stable for the preset number of the cycles.

A switch with clock-gating control and a method for clock gating a switch are described herein. In one example, the method generally includes detecting a state of one or more input ports and a state of one or more output ports of the switch, determining whether the state of the one or more input ports and the state of the one or more output ports has been stable for a preset number of clock cycles, and gating the switch from a clock signal until the state of the one or more input ports or the state of the one or more output ports change upon determining the states have been stable for the preset number of the cycles.

Provided is a technique for reducing the size and cost of a semiconductor device. A semiconductor device includes an IGBT module having an IGBT, and a MOSFET module having a MOSFET whose operational property is different from that of the IGBT, the MOSFET module being connected to the IGBT module in parallel. The semiconductor device is capable of selectively executing an operation mode in which switching timing in the IGBT module and switching timing in the MOSFET module are non-identical.

A gate driver circuit receiving an input control signal and providing a voltage at a gate terminal of a semiconductor switching device (e.g., an IGBT) may include: (i) a first voltage source providing a first voltage; (ii) a second voltage source providing a second voltage, wherein the first voltage is higher than the second voltage; and (iii) a selector circuit selecting, based on the input control signal's logic state, either the first voltage or the second voltage to be placed on the gate terminal of the semiconductor switching device.

A gate driver circuit receiving an input control signal and providing a voltage at a gate terminal of a semiconductor switching device (e.g., an IGBT) may include: (i) a first voltage source providing a first voltage; (ii) a second voltage source providing a second voltage, wherein the first voltage is higher than the second voltage; and (iii) a selector circuit selecting, based on the input control signal's logic state, either the first voltage or the second voltage to be placed on the gate terminal of the semiconductor switching device.