A driver includes an open drain output transistor, a capacitor, a first current source, and first and second transistors. Upon assertion of a transmit signal to turn on the first transistor, a controller asserts a second control signal to turn on the second transistor responsive to a voltage of the capacitor being less than a threshold voltage of the open drain output transistor to thereby increase the gate voltage for the open drain output transistor at a first time rate. The controller deasserts the second control signal to turn off the second transistor responsive to the capacitor voltage exceeding the threshold voltage. Responsive to the capacitor's voltage exceeding the threshold, the first current source charges the capacitor to further increase the gate voltage at a second time rate that is smaller than the first time rate.

A semiconductor device including a first semiconductor chip, a second semiconductor chip, the junction temperature of which becomes higher than that of the first semiconductor chip during switching of the semiconductor device, a collector pattern electrically connected to a collector of the first semiconductor chip and a collector of the second semiconductor chip, an emitter pattern electrically connected to an emitter of the first semiconductor chip and an emitter of the second semiconductor chip, a gate pattern electrically connected to a gate of the first semiconductor chip, a first diode having an anode electrically connected to the gate pattern and a cathode electrically connected to a gate of the second semiconductor chip and a second diode connected in reverse parallel with the first diode.

A data retention circuit includes a power switch, a first inverter and a second inverter. The power switch has a first connection terminal coupled to a power voltage, and a second connection terminal coupled to the first power terminal and a second power terminal of a second inverter. The second input terminal and the second output terminal of the second inverter are coupled to the first output terminal and the first input terminal of the first inverter, respectively. In a sleep mode, the power switch and the transistor are turned off, a first leakage current flows between the first connection terminal and the second connection terminal, a second leakage current flows between the first power terminal and the first output terminal, and the first and the second leakage currents form a steady-state voltage, higher than or equal to a data retention voltage, on a second connection terminal.

An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in a low loss mode, in a bypass mode, or, optionally, in a signal function mode. Embodiments of the invention allow for both a single switch in the series input path to a target circuit while still having the ability to isolate the bypass path from the target circuit. In the low loss and bypass mode, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.

A driving module for a display device includes a first transistor, comprising a gate coupled to a first node, a drain coupled to an output end, and a source coupled to a first positive voltage source; a second transistor, comprising a gate coupled to a second node, a drain coupled to output end, and a source coupled to a first negative voltage source; and a voltage generating unit, coupled to an input end, a second positive voltage source and a second negative voltage source for generating a first voltage at first node and a second voltage at second node according to a control signal from input end; wherein voltage difference between a first positive voltage of first positive voltage source and first voltage is smaller than first threshold and voltage difference between a first negative voltage of first negative voltage source and second voltage is smaller than second threshold.

A switching circuit includes back-to-back NMOS transistors coupled between first and second pins. A first PMOS transistor is coupled between an upper supply voltage and a first node and has a gate coupled to receive a first enable signal. First and second current mirrors are coupled in series to the first node and a resistor is coupled in parallel with the first current mirror. A first leg of the first and second current mirrors is coupled to a lower supply voltage through a second PMOS transistor and a second leg is coupled to the gates of the back-to-back NMOS transistors. The gate of the second PMOS transistor is coupled to a node that lies between the back-to-back NMOS transistors. Additional NMOS transistors couple the lower supply voltage to the gates and sources of the back-to-back NMOS transistors and also to the gate of the first current mirror.

A semiconductor device including a first semiconductor chip, a second semiconductor chip, the junction temperature of which becomes higher than that of the first semiconductor chip during switching of the semiconductor device, a collector pattern electrically connected to a collector of the first semiconductor chip and a collector of the second semiconductor chip, an emitter pattern electrically connected to an emitter of the first semiconductor chip and an emitter of the second semiconductor chip, a gate pattern electrically connected to a gate of the first semiconductor chip, a first diode having an anode electrically connected to the gate pattern and a cathode electrically connected to a gate of the second semiconductor chip and a second diode connected in reverse parallel with the first diode.

A field effect transistor semiconductor device having a compact device footprint for use in automotive and hot swap applications. The device includes a plurality of field effect transistor cells with the plurality of transistor cells having at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell arranged on a substrate. The field effect transistor semiconductor device is configured and arranged to operate the at least one high threshold voltage transistor cell during linear mode operation, and operate both the low threshold voltage transistor cell and the high threshold voltage transistor cell during resistive mode operation. Further provided is a method of operating field effect transistor semiconductor device including a plurality of field effect transistor cells that includes at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell.

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.

Techniques for reading a Multi-Bit Cell (MBC) can include sensing a state parameter value, such as source line voltage, and applying a successive one of N programming parameter values, such as successive programming currents, between instances of sensing the state parameter values. The N successive programming parameter values can be selected to switch the state of a corresponding one of N cell elements of the MBC. Successive ones of the sensed state parameter values can be compared to determine N state change results, which can be used to determine the read state of the MBC.