Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.

Power semiconductor devices in GaN technology include an integrated auxiliary (double) gate terminal and a pulldown network to achieve a normally-off (E-Mode) GaN transistor with threshold voltage higher than 2V, low gate leakage current and enhanced switching performance. The high threshold voltage GaN transistor has a high-voltage active GaN device and a low-voltage auxiliary GaN device wherein the high-voltage GaN device has the gate connected to the source of the integrated auxiliary low-voltage GaN transistor and the drain being the external high-voltage drain terminal and the source being the external source terminal, while the low-voltage auxiliary GaN transistor has the gate (first auxiliary electrode) connected to the drain (second auxiliary electrode) functioning as an external gate terminal. A pull-down network for the switching-off of the high threshold voltage GaN transistor may be formed by additional auxiliary low-voltage GaN transistors and resistive elements connected with the low-voltage auxiliary GaN transistor.

According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.

A device includes a first connection pin, a second connection pin, a third connection pin, and a fourth connection pin. The second connection pin is configured to be connected to a supply voltage. The fourth connection pin is configured to be coupled to a reference voltage. The device further includes a first transistor including: a first gate and a first source/drain coupled to the first connection pin; a second transistor including a second gate and a second source/drain connected to the first transistor; and a third transistor including a third gate, a third source/drain connected to the second transistor, and a fourth source/drain connected to the fourth connection pin. The third transistor is configured to be controlled by a digital signal using the third connection pin. Both the first gate and the second gate are directly connected to the second connection pin.

A driver includes an open drain output transistor, a capacitor, a first current source, and first and second transistors. Upon assertion of a transmit signal to turn on the first transistor, a controller asserts a second control signal to turn on the second transistor responsive to a voltage of the capacitor being less than a threshold voltage of the open drain output transistor to thereby increase the control terminal voltage for the open drain output transistor at a first time rate. The controller deasserts the second control signal to turn off the second transistor responsive to the capacitor voltage exceeding the threshold voltage. Responsive to the capacitor's voltage exceeding the threshold, the first current source charges the capacitor to further increase the control terminal voltage at a second time rate that is smaller than the first time rate.

A driver circuit for controlling a P-channel MOSFET includes a first voltage divider connected to a source terminal of the P-channel MOSFET, a first sub-transistor including a first collector terminal, a first emitter terminal and a first base terminal, the first collector terminal is connected to the first voltage divider, a second sub-transistor including a second collector terminal, a second emitter terminal and a second base terminal, the second emitter terminal is connected to a gate terminal of the P-channel MOSFET, and the second base terminal is connected to a first connection node, a third sub-transistor including a third collector terminal, a third emitter terminal and a third base terminal, the third emitter terminal is connected to the second emitter terminal, and the third collector terminal is connected to a ground, and a first resistor connected between the second collector terminal and the second emitter terminal.

According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.

An integrated device includes at least one MOS transistor having a plurality of cells. In each of one or more of the cells a disabling structure is provided. The disabling structure is configured to be in a non-conductive condition when the MOS transistor is switched on in response to a control voltage comprised between a threshold voltage of the MOS transistor and an intervention voltage of the disabling structure, or to be in a conductive condition otherwise. A system comprising at least one integrated device as above is also proposed. Moreover, a corresponding process for manufacturing this integrated device is proposed.

An arithmetic logic unit according to an embodiment of the present technology includes: a plurality of input lines; and a multiply-accumulate operation device. Electrical signals are input to the plurality of input lines. The multiply-accumulate operation device includes a pair of output lines, a plurality of multiplication units including a weight unit that generates, on the basis of the electrical signals input to the plurality of input lines, charges corresponding to multiplication values obtained by multiplying signal values represented by the electrical signals by weight values, a holding unit that holds a binary state, and a switch unit that outputs, on the basis of the held binary state, the charges generated by the weight unit to one of the pair of output lines, an accumulation unit that accumulates the charges output to the pair of output lines by the plurality of multiplication units, and an output unit that outputs, on the basis of the accumulated charges, a multiply-accumulate signal representing a sum of the multiplication values.

An arithmetic logic unit according to an embodiment of the present technology includes: a plurality of input lines; and a multiply-accumulate operation device. Electrical signals are input to the plurality of input lines. The multiply-accumulate operation device includes a pair of output lines, a plurality of multiplication units including a weight unit that generates, on the basis of the electrical signals input to the plurality of input lines, charges corresponding to multiplication values obtained by multiplying signal values represented by the electrical signals by weight values, a holding unit that holds a binary state, and a switch unit that outputs, on the basis of the held binary state, the charges generated by the weight unit to one of the pair of output lines, an accumulation unit that accumulates the charges output to the pair of output lines by the plurality of multiplication units, and an output unit that outputs, on the basis of the accumulated charges, a multiply-accumulate signal representing a sum of the multiplication values.