H03K19/0008

Semiconductor integrated circuit with semiconductor layer having indium, zinc, and oxygen

Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

RESET AND SAFE STATE LOGIC GENERATION IN DUAL POWER FLOW DEVICES

An electric device includes: a first power domain; a second power domain; a third power domain, where during power-up, the third, the second, and the first power domains are configured to be powered up sequentially, where during standby-exit, the first, the second, and the third power domains are configured to be powered up sequentially; isolation paths that provide controlled signal transmission among the first, the second, and the third power domains, where each isolation path includes an isolation circuit between an input power domain and an output power domain of the isolation path; and a control circuit in the first power domain, where for each isolation path, the control circuit is configured to generate an isolation control signal for the isolation circuit, where the isolation circuit is configured enable or disable signal transmission along the isolation path.

Semiconductor Device, Electronic Component, and Electronic Device

Skew of a multi-context PLD in context switch is reduced to achieve low power consumption. The frequency of a clock signal is switched in context switch operation in accordance with circuit operation to secure time required for context switch. By returning the frequency of the clock signal to the original frequency after executing the context switch, the PLD can maintain high-speed processing and perform the context switch accurately and safely. The time required for the context switch mainly depends on a hardware structure (circuit layout including a parasitic component). Thus, the reliability in the context switch can be improved when time that is equal to or longer than the longest time required for circuit change is secured.

Flexible on-chip power and clock
11243559 · 2022-02-08 · ·

Modern integrated circuits have an increasing need for various levels of both supply voltage (V) and operating frequency (f) available at fine spatial and temporal granularity. This work introduces a solution that provides a number and quality of locally distributed V/f domains through FOPAC. Opportunistically sharing design resources and features between multi-phase voltage regulators (MPVRs) and resonant rotary clocks (ReRoCs) enabling i) the scalability to hundreds of domains, ii) fast switching times for both voltage and frequency, leading to temporal flexibility, and iii) locally distributed designs, leading to spatial flexibility.

State-retaining logic cell

A state-retaining logic cell may include a plurality of inverters, an output node non-volatile (NVM) storage cell, and an input node NVM storage cell. The plurality of inverters may include a feed-forward inverter and a feed-back inverter disposed in a back-to-back arrangement. The output node NVM storage cell may include first and second terminals, where the first terminal is connected adjacent an output node of the feed-forward and the feed-back inverters, and the second terminal is connected to a programming rail. The input node NVM storage cell may include first and second terminals, where the first terminal is connected adjacent an input node of the feed-forward and the feed-back inverters, and the second terminal is connected to the programming rail.

Fine-grain dynamically reconfigurable FPGA architecture

A field programmable gate array (FPGA) and method of reconfiguring a FPGA are disclosed. The FPGA includes a plurality of logic elements interconnected with reconfigurable switches and at least horizontal and vertical direct links A memory is coupled to the reconfigurable switches, the memory being configured to store at least two run time configurations. The reconfigurable switches are reconfigurable based on a selected run time configuration stored in the memory. The memory may be a nanoelectronic random access memory (RAM). The memory may be configured to store the at least two run time configurations for at least four logic elements. Each logic element may include a look-up-table (LUT), a flip-flop, inputs and outputs. Each logic element may include dedicated carry logic. At least four logic elements may be interconnected with diagonal direct links.

Method and apparatuses for optimizing power management on an integrated circuit device
09735778 · 2017-08-15 ·

Input-output (IO) circuitry for optimizing power management on an integrated circuit is disclosed. The IO circuitry includes monitoring circuitry and a multiplexer circuit that is controlled by the monitoring circuitry. The monitoring circuitry determines whether majority of the bits of an IO signal are transitioning from a first logical state to a second logical state. When a number of bit transitions of the IO signal exceeds a predetermined bit transition threshold, the monitoring circuitry may send a monitoring circuitry output to the multiplexer circuit to selectively couple an output signal to either the IO signal or an inverted IO signal. The IO circuitry further includes an additional multiplexer that receives the monitoring circuitry output and a clock signal. The additional multiplexer selects an additional output signal from the monitoring circuitry output and the clock signal based on a control signal that indicates a power-savings operation.

Semiconductor device, electronic component, and electronic device

To provide a semiconductor device including element layers that are stacked. A first wiring layer and a second wiring layer are stacked between a first element layer and a second element layer. A third wiring layer and a fourth wiring layer are stacked over the second element layer. Transistors of logic cells are provided in the first element layer. Wirings of the logic cells are provided in the first wiring layer or the second wiring layer. Input ports and output ports of the logic cells are provided in the third wiring layer. The input port of one of the logic cells is connected to the output port of another logic cell through the wiring of the third wiring layer or the fourth wiring layer. Connecting the logic cells through the wiring layers over the second element layer improves the efficiency of steps of arranging and connecting the logic cells.

DYNAMIC PARAMETER OPERATION OF AN FPGA

Methods and systems for operating a programmable logic fabric including a dynamic parameter scaling controller that tracks an operating parameter that functions at multiple operating conditions by maintaining the operating parameter while cycling through a multiple operating conditions during a calibration mode using the calibration configuration for the programmable logic fabric. The dynamic parameter scaling controller also stores one or more functional values for the operating parameter in a calibration table. The dynamic parameter scaling controller also operates the programmable logic fabric using a design configuration using dynamic values for the operating parameter based at least in part on the one or more operating conditions.

Apparatus for reference voltage generation for I/O interface circuit

An apparatus includes a first input/output (I/O) interface circuit having a maximum voltage rating. The first I/O interface circuit includes a level shifter and an output stage. A reference voltage bias generator is coupled to the first I/O interface circuit, to a first supply voltage, and to a first ground potential. The reference voltage bias generator is configured to generate a plurality of reference bias signals, including a first reference voltage and a second reference voltage. When the first supply voltage is not greater than the maximum voltage rating, the first reference voltage is equal to the first supply voltage and the second reference voltage is equal to the first ground potential. When the first supply voltage is greater than the maximum voltage rating, the first reference voltage is equal to the first supply voltage times a first fraction, and the second reference voltage is equal to the first supply voltage times a second fraction.