Systems and techniques for applying voltage biases to gates of driver circuitry of an integrated circuit (IC) based on a detected bus voltage, IC supply voltage, or both are used to mitigate Electrical Over-Stress (EOS) issues in components of the driver circuitry caused, for instance, by high bus voltages in serial communication systems relative to maximum operating voltages of those components. A driver bias generator selectively applies bias voltages at gates of transistors of a stacked driver structure of an IC to prevent the voltage drop across any given transistor of the stacked driver structure from exceeding a predetermined threshold associated with the maximum operating voltage range of the transistors.

Some embodiments provide a voltage-level shifter circuit comprising a cross-coupled transistor pull-up network that includes a plurality of diode-connected transistors configured to cause the state of the cross-coupled transistor network to switch at a low current through a pull-down network coupled thereto, such as a current corresponding to near-threshold voltage or sub-threshold voltage operation of the pull-down network.

Embodiments may provide a radiation hardened low-power data acquisition system-on-chip (SOC) suitable for space flight. The various embodiments may provide the radiation hardened low-power data acquisition SOC having a radiation hardened semiconductor die, a radiation hardened multiplexer integrated on the radiation hardened semiconductor die and configured to receive a plurality of analog signals and selectively output an analog signal of the plurality of analog signals, at least one radiation hardened analog to digital converted integrated on the radiation hardened semiconductor die and configured to convert the analog signal to a digital signal, and a radiation hardened serial communication interface integrated on the radiation hardened semiconductor die and configured to output the digital signal. The various embodiments may provide a computing having a processor and the radiation hardened low-power data acquisition SOC electrically coupled to the processor such that the digital signal is output to the processor.

A circuit and method are provided to monitor a clock for a data processor. The method includes receiving a clock signal and producing a first voltage proportional to a frequency of the clock signal. The first voltage is converted to a digital signal. During an initialization mode, the method ensures the clock signal is at a desired frequency and scales the digital signal using a first configurable ratio to produce a high threshold value. When changing from the initialization mode to an operating mode, the method ceases to scale the digital signal and maintains the high threshold value. During the operating mode, the method compares the digital signal to the high threshold value to determine if the clock signal has been increased in frequency beyond a desired level, and if so, triggers an overclock alert to a system management circuit of the data processor.

A semiconductor device that can perform product-sum operation with low power is provided. The semiconductor device includes a switching circuit. The switching circuit includes first to fourth terminals. The switching circuit has a function of selecting one of the third terminal and the fourth terminal as electrical connection destination of the first terminal, and selecting the other of the third terminal and the fourth terminal as electrical connection destination of the second terminal, on the basis of first data. The switching circuit includes a first transistor and a second transistor each having a back gate. The switching circuit has a function of determining a signal-transmission speed between the first terminal and one of the third terminal and the fourth terminal and a signal-transmission speed between the second terminal and the other of the third terminal and the fourth terminal on the basis of potentials of the back gates. The potentials are determined by second data. When signals are input to the first terminal and the second terminal, a time lag between the signals output from the third terminal and the fourth terminal is determined by the first data and the second data.

An input circuit includes: a buffer circuit coupled to a pad, the buffer circuit being driven by a first power voltage; a level shifter circuit coupled to an output terminal of the buffer circuit, the level shifter circuit being driven by a second power voltage; and a voltage stabilization circuit coupled to an input node of the level shifter circuit, the voltage stabilization circuit being driven by the first power voltage and the second power voltage. The voltage stabilization circuit maintains a voltage of the input node of the level shifter circuit equal to or less than a given level sufficient to keep an output signal of the level shifter circuit at a specific logic value, when a voltage level of the second power voltage is rising and a voltage level of the first power voltage is kept at a low level.

A leakage compensation dynamic register, a data operation unit, a chip, a hash board, and a computing apparatus. The leakage compensation dynamic register comprises: an input terminal, an output terminal, a clock signal terminal, and an analog switch unit; a data latch unit for latching the data under control of the clock signal; and an output drive unit for inverting and outputting the data received from the data latch unit, the analog switch unit, the data latch unit, and the output drive unit being sequentially connected in series between the input terminal and the output terminal, and the analog switch unit and the data latch unit having a node therebetween, wherein the leakage compensation dynamic register further comprises a leakage compensation unit electrically connected between the node and the output terminal.

A high-speed voltage clamping circuit includes p-type field effect transistor (PFET) biasing circuit, an n-type field effect transistor (NFET) biasing circuit, and a field effect transistor (FET) clamp circuit. The PFET biasing circuit is configured to generate a PFET biasing voltage. The NFET biasing circuit is configured to generate a NFET biasing voltage. The FET clamp circuit is in signal communication with the PFET biasing circuit and the NFET biasing circuit. The PFET biasing circuit controls operation of the clamping circuit in response to a voltage overshoot event and the NFET biasing circuit controls operation of the clamping circuit in response to a voltage undershoot event.

A circuit includes an output node and an amplifier and first and second branches coupled between power supply and reference nodes. The first branch includes a first switching device coupled between a first amplifier input and the reference node, the second branch includes a second switching device coupled between the output node and a second amplifier input, and a third switching device is coupled between the power supply and output nodes. Responsive to a first voltage level on the power supply node, each of the first and second switching devices is switched off and the third switching device is switched on, and responsive to a second voltage level on the power supply node greater than the first voltage level, each of the first and second switching devices is switched on and the third switching device is switched off.

A semiconductor device includes: an electronic circuit to receive a first signal and transmit a second signal; a power supply circuit to supply a power supply voltage to the electronic circuit; and a correction circuit to change a value of the power supply voltage to switch between a normal and a refresh operation mode. The electronic circuit includes: a first Pch transistor in which a potential of a first gate changes according to the first signal, and a potential of one of the first source and drain changes in response to the power supply voltage; and a first Nch transistor in which the second gate is electrically connected to the first gate, a potential of one of the second source and drain is equal to or lower than a ground potential, and another of the second source and drain is electrically connected to another of the first source and drain.