In a transmission circuit, a first pulse signal with a first frequency and a second pulse signal with a second frequency are output according to a rising edge and a falling edge of a first input signal, respectively. When a second input signal indicates an active level, the second pulse signal is output according to the falling edge of the first input signal and the second frequency is changed to a third frequency. In a reception circuit, a first level of a first output signal is changed to a second level according to a first induced signal via a transformer, the second level of the first output signal is changed to the first level according to a second induced signal via the transformer, and a second output signal is changed to an active level when a frequency of the second induced signal has changed to the third frequency.

A circuit includes first to third transistors. The first transistor includes a first terminal coupled to a first voltage, and a second terminal coupled to a connection. The second transistor includes a gate terminal coupled to the gate terminal of the first transistor, a first terminal coupled to a second voltage, and a second terminal coupled to the connection. The third transistor includes a first terminal coupled to the connection, a second terminal coupled to a node between the second terminals of the first and second transistors. The third transistor is controlled to be turned ON at a beginning of a first edge of a driving signal on the connection to pull a voltage of the driving signal on the first edge toward a threshold voltage, and be turned OFF in response to and after the voltage of the driving signal on the first edge reaching the threshold voltage.

A level shifter circuit to convert a first signal having an input voltage range V1 to a level shifted output having an output voltage range V2 includes an NMOS depletion mode transistor having a drain terminal connected to an output range upper-level supply node, a source connected to an intermediate node and a gate connected to an output node, a PMOS enhancement mode transistor having a drain terminal connected to the output node, a source connected to the intermediate node and a gate connected to an input node, and an NMOS enhancement mode transistor having a drain terminal connected to the output node, a source connected to an output range lower-level supply node and a gate connected to the input node.

A semiconductor device includes a latch circuit including a first inverter configured to output a first signal based on an input signal, a second inverter configured to output a first clock signal based on a first strobe signal, a third inverter configured to output a second clock signal based on a second strobe signal, a first clock generation circuit configured to generate a third clock signal having transitions that are delayed with respect to the first clock signal, a second clock generation circuit configured to generate a fourth clock signal having transitions that are delayed with respect to the second clock signal, a fourth inverter configured to output an inversion signal of the first signal in accordance with the third and fourth clock signals, and a data latch circuit configured to latch an output signal of the fourth inverter.

A semiconductor integrated circuit device includes: first and second transistors provided between a first power source and an output terminal; a step-down circuit that generates a second power source from the first power source; a power source switch circuit that outputs, as a fourth power source, a higher one of potentials of the second power source and a third power source; and a level shifter circuit that transits between the first power source and a fourth power source. The first transistor has a gate connected to an output of the level shifter circuit; the second transistor has a gate connected to the fourth power source.

A pulse receiving circuit constituting a signal transmission device includes a first pulse detector that receives a differential input between a first reception pulse signal, i.e. an internal signal at a secondary winding of a first transformer and a second reception pulse signal, i.e. an internal signal at a secondary winding of a second transformer; a second pulse detector that receives the differential input between the first reception pulse signal and the second reception pulse signal with input polarity reversed to that of the first pulse detector; and a logic unit that generates a reception pulse signal based on output signals of the first and second pulse detectors, respectively.

A pulse receiving circuit constituting a signal transmission device includes a first pulse detector that receives a differential input between a first reception pulse signal, i.e. an internal signal at a secondary winding of a first transformer and a second reception pulse signal, i.e. an internal signal at a secondary winding of a second transformer; a second pulse detector that receives the differential input between the first reception pulse signal and the second reception pulse signal with input polarity reversed to that of the first pulse detector; and a logic unit that generates a reception pulse signal based on output signals of the first and second pulse detectors, respectively.

Systems, methods, and devices for monitoring operation of industrial equipment are disclosed. In one embodiment, a monitoring system is provided that includes a passive backplane and one more functional circuits that can couple to the backplane. Each of the functional circuits that are coupled to the backplane can have access to all data that is delivered to the backplane. Therefore, resources (e.g., computing power, or other functionality) from each functional circuits can be shared by all active functional circuits that are coupled to the backplane. Because resources from each of the functional circuits can be shared, and because the functional circuits can be detachably coupled to the backplane, performance of the monitoring systems can be tailored to specific applications. For example, processing power can be increased by coupling additional processing circuits to the backplane.

An application specific integrated circuit (ASIC) chip includes: a systolic array of cells; and multiple controllable bus lines configured to convey data among the systolic array of cells, in which the systolic array of cells is arranged in multiple tiles, each tile of the multiple tiles including 1) a corresponding sub array of cells of the systolic array of cells, 2) a corresponding subset of controllable bus lines of the multiple controllable bus lines, and 3) memory coupled to the subarray of cells.

Disclosed are a Miller Clamp protection circuit, a driving circuit, a driving chip and an intelligent IGBT module, which are connected to a device to be driven. The Miller Clamp protection circuit comprises a main driving circuit configured to provide a driving signal; a Miller switch configured to reduce a voltage glitch; a Miller switch control circuit configured to automatically control an on and off of the Miller switch according to an intermediate signal of the main driving circuit. The main driving circuit is connected to a power supply, the Miller switch control circuit, one end of the Miller switch and the device to be driven, and another end of the Miller switch is grounded.