Patent classifications
H03K2217/0036
ULTRASONIC ATOMIZING SHEET FULL-WAVE DRIVE CIRCUIT AND ULTRASONIC ELECTRONIC CIGARETTE
Disclosed are a full-wave drive circuit for an ultrasonic atomizing sheet and an ultrasonic electronic cigarette. In an embodiment, the ultrasonic atomizing sheet full-wave drive circuit comprises a power supply module, a microprocessor, a high-frequency square wave generation circuit, an NMOS transistor and a resonance circuit configured to convert, on the basis of the NMOS transistor, a voltage signal outputted by the high-frequency square wave generation circuit into a full-wave oscillation signal, so as to drive the ultrasonic atomizing sheet to perform full-wave oscillation. A disclosed embodiment has low requirements for a boost module, low loss of the boost module, high power conversion efficiency, small volume, low loss of NMOS transistor and low cost, is easy for debugging, and has high reliability and good atomization effect.
ELECTRONIC DEVICE PERFORMING POWER SWITCHING OPERATION
An electronic device includes an internal voltage driving circuit configured to drive an internal voltage to one of first and second power supply voltages based on a driving control signal depending on an operating frequency. The electronic device includes a driving control signal generation circuit configured to generate the driving control signal that sets a level of the internal voltage, by detecting the level of the internal voltage.
HIGH-POWER SWITCHING MODULE FOR THE DIRECT PULSE ENERGY FEEDING OF A CONSUMER
Aspects of the invention relate to a high-power switching module for the direct pulse energy feeding of a consumer with a plurality of switching stages connected in series. A coupling element and an energy buffer store are provided, the coupling element coupling a primary circuit comprising a balancing capacitance and a semiconductor switch to a secondary circuit comprising the energy buffer store, the coupling element being provided and embodied for obtaining energy of the balancing capacitance and delivering this energy to the energy buffer store during the on phase of the semiconductor switch, and the energy buffer store being provided and embodied for delivering the obtained energy to an energy store of the driver assembly when the semiconductor switch is in the switched-off state.
ACTIVELY TRACKING SWITCHING SPEED CONTROL AND REGULATING SWITCHING SPEED OF A POWER TRANSISTOR DURING TURN-ON
A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter.
Active gate driver
An active gate driver suitable for activating an electronic switch of an electric motor. The active gate driver includes a pull up branch, a pull down branch and a current and voltage feedback from an output of the active gate driver to at least one input of the active gate driver, wherein the current and voltage feedback is common to both the pull up branch and the pull down branch.
Quasi-resonant thyristor current interrupter
In one aspect, a quasi-resonant turn-off circuit is provided. The quasi-resonant turn-off circuit is couplable in parallel with a pair of anti-parallel thyristors. The quasi-resonant turn-off circuit includes a resonant capacitor and an energy recovery circuit. The resonant capacitor is configured to supply a charge to the pair of anti-parallel thyristors to decrease a turn-off time of the pair of anti-parallel thyristors. The energy recovery circuit is configured to recharge the resonant capacitor using remnant energy left in parasitic inductances coupled to the quasi-resonant turn-off circuit after the pair of anti-parallel thyristors is off.
High voltage gate driver current source
A power supply system for USB Power Delivery includes a current source drive circuit to control a power FET to regulate the supply of power along a power path. The current source drive circuit includes a cascode current source and a cascode protection circuit formed by a source follower and a feedback voltage divider. The source follower can be a transistor with its gate connected to a cascode node between upper- and lower-stage transistors of the cascode current source. The divider node of the voltage divider is connected to the gate of the lower-stage transistor. The current source drive circuit can operate within the gate-source voltage specifications of 30-volt DEPMOS devices, and can provide high output impedance to the gate of power FET and a current limit circuit during current limiting operation, without requiring an extra high-voltage mask during fabrication.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT
A semiconductor device according to an embodiment includes a first trench, a first gate electrode in the first trench, a second trench, a second gate electrode provided in the second trench, a third trench, a third gate electrode in the third trench, a first electrode pad electrically connected to the first gate electrode, a second electrode pad electrically connected to the second gate electrode, and a third electrode pad electrically connected to the third gate electrode, in which a thickness of a conductive semiconductor region opposed to the third gate electrode is smaller than a thickness of a conductive semiconductor region opposed to the first gate electrode, and in which the thickness of the conductive semiconductor region opposed to the third gate electrode is smaller than a thickness of a conductive type semiconductor region opposed to the second gate electrode.
OPTICAL LATCH CIRCUIT AND ELECTRONIC DEVICE
According to the present invention, an optical latch circuit includes a voltage detector configured to compare a first power generation voltage input from a first input terminal with a preset first threshold voltage and output a set signal from a determination output terminal when the first power generation voltage exceeds the first threshold voltage, a first photovoltaic element connected between the first input terminal and a grounding point in a forward direction and configured to output a first power generation voltage to the first input terminal according to photovoltaic power when light is radiated, and a feedback resistor inserted between the first input terminal and the determination output terminal.
Driving Circuit, Driving IC, and Driving System
The present disclosure provides a driving circuit, a driving IC, and a driving system, relating to the technical field of electronic circuits. The driving circuit comprises a control module and a driving signal output module, the control module is electrically connected to the driving signal output module, and the driving signal output module is configured to be electrically connected to a to-be-driven device, wherein the driving signal output module comprises at least two transistors, and the at least two transistors are epitaxially grown on the same substrate; and the control module is configured to control a closed state of the at least two transistors, so as to control an operation state of the to-be-driven device.