An apparatus includes an integrated circuit (IC), which includes complementary metal oxide semiconductor (CMOS) circuitry. The CMOS circuitry includes a p-channel transistor network that includes at least one p-channel transistor having a gate-induced drain leakage (GIDL) current. The IC further includes a native metal oxide semiconductor (MOS) transistor coupled to supply a bias voltage to the at least one p-channel transistor to reduce the GIDL current of the at least one p-channel transistor.

A regenerative gate charging circuit includes an inductor coupled to a gate of a FET. An output control circuit is coupled to a timing control circuit and a bridged inductor driver, which is coupled to the inductor. A sense circuit is coupled to the gate and to the timing control circuit, which receives a control signal, generates output control signals in accordance with a first timing profile, and transmits the output control signals to the output control circuit. In accordance with the first timing profile, the output control circuit holds switches or controllable current sources of the bridged inductor driver in an ON state for a first period and holds the switches or controllable current sources in an OFF state for a second period. Gate voltages are sampled during the second period and after the first period. The timing control circuit generates a second timing profile using the sampled voltages.

In one embodiment, an insulated gate bipolar transistor (IGBT) device may include an NMOS portion and a PNP portion, where the PNP portion is coupled to the NMOS portion. The PNP portion may include a base and a collector. The IGBT may further include a flyback clamp, where the flyback clamp is coupled between the base and the collector of the PNP portion.

Disclosed is an electronic circuit. The electronic circuit includes a first transistor device, a second transistor device, and a third transistor device, each having a control node and a load path. The electronic circuit further includes a drive circuit. The load paths of the first and second transistor devices are connected in parallel, the load path of the third transistor device is connected in series with the load paths of the first and second transistor devices, and the first transistor device and the second transistor device are integrated in a common semiconductor body. The drive circuit is configured, based on a control signal, to successively switch on the first transistor device and the second transistor device, so that the second transistor device is switched on when the first transistor device is in an on-state.

Provided are an overcurrent protection circuit and a display device, where the overcurrent protection circuit includes a drive transistor, an operational amplifier, a buffer, a peak current detector, and a peak current controller; the output terminal of the operational amplifier is connected with the buffer, and the operational amplifier controls the drive transistor through the buffer; the output terminal of the peak current controller is electrically connected with the gate control terminal of the buffer; when the peak current detector does not detect an overload current, the peak current detector controls the operational amplifier to control the gate of the drive transistor; when the peak current detector detects an overload current, the peak current detector controls the peak current controller to control the gate of the drive transistor to maintain the overcurrent protection circuit to work.

A follow-hold switch circuit comprising: a follower; a sampling sub-circuit for voltage sampling; a bootstrap-control sub-circuit, which provides a bootstrap voltage to the sampling sub-circuit when the circuit is in a following state; a sampling-switch-control sub-circuit, which provides a common-mode voltage to a bootstrap capacitor in the bootstrap-control sub-circuit when the circuit is in a holding state; the follower is connected to an output of the sampling sub-circuit; the sampling sub-circuit is connected to the bootstrap-control sub-circuit and the sampling-switch-control sub-circuit respectively through a sampling switch; the present disclosure can effectively improve the linearity of sampling switches.

The subject matter of this document can be embodied in a method that includes a voltage regulator having an input terminal and an output terminal. The voltage regulator includes a high-side transistor between the input terminal and an intermediate terminal, and a low-side transistor between the intermediate terminal and ground. The voltage regulator includes a low-side driver circuit including a capacitor and an inverter. The output of the inverter is connected to the gate of the low-side transistor. The voltage regulator also includes a controller that drives the high-side and low-side transistors to alternately couple the intermediate terminal to the input terminal and ground. The controller is configured to drive the low-side transistor by controlling the inverter. The voltage regulator further includes a switch coupled to the low-side driver circuit. The switch is configured to block charge leakage out of the capacitor during an off state of the low-side transistor.

According to one embodiment, a current detecting circuit includes: a normally-ON type first switching element that includes a drain, a source, and a gate; a normally-OFF type second switching element including a drain that is connected to the source of the first switching element, a source that is connected to the gate of the first switching element, and a gate; and a differential amplification circuit that outputs a voltage according to a voltage between the drain and the source of the second switching element.

An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.

A novel low power enable circuit is less sensitive to power supply variations while consuming less than 50 nA of supply current. The enable circuit includes a voltage clamp circuit which limits the supply level for a first inverter. The clamp circuit having a first input connected to a supply, a second input connected to chip enable, and a first output. The enable circuit further includes a first inverter having a third input connected to the chip enable, a fourth input connected to the first output of the clamp circuit, and a second output; a second inverter having a fifth input connected to the second output of the first inverter, a sixth input connected to the supply, and a third output; a memory element having a seventh input connected to the third output of the second inverter, an eighth input, and a fourth output; and a comparator having a ninth input connected to the chip enable, a tenth input connected to a reference signal, an eleventh input connected to the fourth output of the memory element, and a fifth output connected to the eighth input of the memory element.