A gate driver circuit comprises a gate-driver assembly, a transformer, first and second circuit voltage outputs, first and second switching devices, and a controller. The gate-driver assembly comprises a first and second voltage inputs and a first and second voltage outputs coupled to a primary winding of the transformer. The first and second switching devices are coupled to the secondary winding and respectively coupled to the first and second circuit voltage outputs. The controller is configured to cause the first circuit voltage output to supply a positive output voltage by supplying a higher first input voltage to the first voltage input than to the second voltage input and is also configured to cause the first circuit voltage output to supply a negative output voltage by supplying a higher second input voltage to the second voltage input than to the first voltage input.

A semiconductor device includes: a first conductivity type base body; a second conductivity type well region provided on the base body and formed with a high potential side circuit; a second conductivity type voltage blocking area provided to surround a periphery of the well region; a level shifter having a second conductivity type drift region provided on the base body, a second conductivity type carrier reception region provided in an upper part of the drift region, a first conductivity type base region provided in contact with the drift region, a first gate electrode provided on the base region, and a second conductivity type carrier supply region provided in an upper part of the base region; a first conductivity type isolation region provided between the voltage blocking area and the drift region on the base body; and a second gate electrode on the isolation region.

Disclosed examples provide DC-DC converters and control circuits to provide high and low-side driver signals and to selectively adjust a delay time between a low-side switching device turning off and a high-side switching device turning on according to a comparator signal, including a clocked comparator circuit referenced to a switching node to sample the voltage across the high-side switching device in response to a first edge of the high-side driver signal, and to generate the comparator signal indicating a polarity of the sampled high-side switch voltage to facilitate zero voltage switching of the high-side switching device.

A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

A driver and a driving control method for a power converter are provided. The driver includes a level shift circuit, a negative voltage generator and a first PMOS transistor. The level shift circuit provides an output signal, wherein the output signal has a first operation voltage and a second operation voltage. When the output signal received by the negative voltage generator is the first operation voltage, the negative voltage generator outputs the first operation voltage. When the output signal received by the negative voltage generator is the second operation voltage, the negative voltage generator generates and outputs a third operation voltage, and the third operation voltage is lower than the second operation voltage. A control terminal of the first PMOS transistor is coupled to an output terminal of the negative voltage generator. An output terminal of the first PMOS transistor provides a driving voltage.

Driver circuits to invert an input signal and to generate an output signal based on the inverted input signal are presented. The voltage level of the logical high value of the output signal is adjustable. The driver circuit has a high side switching element coupled between a supply terminal and the output terminal of the driver circuit. The driver circuit has a low side switching element coupled between the output terminal of the driver circuit and a reference potential. The driver circuit has a regulation transistor, wherein a controlled section of the regulation transistor is coupled in series with the high side switching element and the low side switching element between the supply terminal and the reference potential. The driver circuit has a feedback circuit to regulate the output voltage by generating a regulation voltage at a control terminal of the regulation transistor.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

Provided is a load drive device capable of diagnosing a failure of an output terminal of the load drive device before a charging voltage stabilizes in a configuration in which a capacitor is connected to an output terminal of the load drive device that drives an inductive load. In the load drive device according to the present invention, a capacitor is connected between a load terminal and a ground terminal, and the presence or absence of a failure of the load terminal is diagnosed on the basis of a current flowing between an internal power supply included in a diagnosis circuit and the load terminal.

An integrated circuit includes a die that includes a circuit configured to generate a PWM signal in response to a first clock signal, and a first set of pads configured to provide amplified PWM signals to external filters. An amplifier stage is configured to provide the amplified PWM signals. The die includes two pads configured to be coupled to an external inductor, and a second set of pads configured to provide regulated voltages. An electronic converter circuit is configured to generate the regulated voltages to supply the amplifier stage. The electronic converter circuit includes a control circuit configured to drive electronic switches in response to a second clock signal to regulate the regulated voltages to a respective target value. The die includes a control block to synchronize the switching activity of the electronic switches with the switching activity of the amplifier stage.