A display device includes a substrate and an active pattern positioned above the substrate and including a plurality of channel regions and a plurality of conductive regions. The display device includes a plurality of scan lines extending substantially in a first direction. The display device includes a data line and a driving voltage line crossing the plurality of scan lines. The display device includes a first transistor including a first channel region among the plurality of channel regions and a first gate electrode. The display device includes a first connector electrically connecting the first gate electrode of the first transistor and a first conductive region among the plurality of conductive regions to each other. The driving voltage line overlaps at least a portion of the first connector along a direction orthogonal to an upper surface of the substrate.

A display device includes a substrate and an active pattern positioned above the substrate and including a plurality of channel regions and a plurality of conductive regions. The display device includes a plurality of scan lines extending substantially in a first direction. The display device includes a data line and a driving voltage line crossing the plurality of scan lines. The display device includes a first transistor including a first channel region among the plurality of channel regions and a first gate electrode. The display device includes a first connector electrically connecting the first gate electrode of the first transistor and a first conductive region among the plurality of conductive regions to each other. The driving voltage line overlaps at least a portion of the first connector along a direction orthogonal to an upper surface of the substrate.

A display device includes a substrate and an active pattern positioned above the substrate and including a plurality of channel regions and a plurality of conductive regions. The display device includes a plurality of scan lines extending substantially in a first direction. The display device includes a data line and a driving voltage line crossing the plurality of scan lines. The display device includes a first transistor including a first channel region among the plurality of channel regions and a first gate electrode. The display device includes a first connector electrically connecting the first gate electrode of the first transistor and a first conductive region among the plurality of conductive regions to each other. The driving voltage line overlaps at least a portion of the first connector along a direction orthogonal to an upper surface of the substrate.

An image processing method and an electronic device are provided. The image processing method includes: displaying a first interface, where the first interface includes a first control; detecting a first operation on the first control; obtaining a first image stream in response to the first operation, where the first image stream is an image stream of first color space; converting the first image stream into a second image stream of second color space according to a demosaicing algorithm; performing downsampling and resampling on the second image stream to obtain a third image stream, where the third image stream is an image stream of the first color space, and a size of the third image stream is less than that of the first image stream; and performing image processing on the third image stream to obtain a fourth image stream.

An image acquisition apparatus according to an example embodiment includes an image sensor including a sensor substrate including a plurality of photo-sensing cells for sensing light thereon, and a color separation lens array disposed in front of the sensor substrate and including a nanostructure to separate incident light by color, wherein the nanostructure forms a phase distribution in a plurality of regions facing the plurality of photo-sensing cells, respectively, and the phase distribution is formed so as to condense light of different wavelengths onto photo-sensing cells adjacent to each other, and a processor configured to process an image signal for each color obtained from the image sensor. The processor is further configured to perform decoupling with respect to sensing signals of the plurality of photo-sensing cells by using a kernel defined from a point spread function determined by the phase distribution.

A method of deriving color response characteristics of an image acquisition device, the method including: collecting first training data sets; deriving a first-order color response characteristic of the image acquisition device by performing a matching operation of statistically matching a relationship between device coordinates and colorimetric coordinates of an image acquisition device using the first training data sets; collecting second training data sets corresponding to a spectrum of one or more edge regions of a color gamut of a color matching function representing a sensitivity of a human eye; and deriving a second-order color response characteristic of the image acquisition device by further performing the matching operation using the second training data sets.

A method of deriving color response characteristics of an image acquisition device, the method including: collecting first training data sets; deriving a first-order color response characteristic of the image acquisition device by performing a matching operation of statistically matching a relationship between device coordinates and colorimetric coordinates of an image acquisition device using the first training data sets; collecting second training data sets corresponding to a spectrum of one or more edge regions of a color gamut of a color matching function representing a sensitivity of a human eye; and deriving a second-order color response characteristic of the image acquisition device by further performing the matching operation using the second training data sets.

A signal for two wavelengths of infrared light and visible light is obtained. This solid-state imaging device includes a pixel region in which a plurality of pixels is arranged in a matrix, in which the plurality of pixels includes a first pixel and a second pixel, the first pixel includes a first light transmitting part that is provided on a light incident surface side of a first compound semiconductor layer and transmits infrared light and visible light, and a first photoelectric conversion element that is provided in the first compound semiconductor layer and photoelectrically converts the infrared light and the visible light that have passed through the first light transmitting part, and the second pixel includes a second light transmitting part including a second compound semiconductor layer, the second light transmitting part being provided on the light incident surface side of the first compound semiconductor layer and transmitting the infrared light and blocking the transmission of the visible light, and a second photoelectric conversion element that photoelectrically converts the infrared light that has passed through the second light transmitting part.

A signal for two wavelengths of infrared light and visible light is obtained. This solid-state imaging device includes a pixel region in which a plurality of pixels is arranged in a matrix, in which the plurality of pixels includes a first pixel and a second pixel, the first pixel includes a first light transmitting part that is provided on a light incident surface side of a first compound semiconductor layer and transmits infrared light and visible light, and a first photoelectric conversion element that is provided in the first compound semiconductor layer and photoelectrically converts the infrared light and the visible light that have passed through the first light transmitting part, and the second pixel includes a second light transmitting part including a second compound semiconductor layer, the second light transmitting part being provided on the light incident surface side of the first compound semiconductor layer and transmitting the infrared light and blocking the transmission of the visible light, and a second photoelectric conversion element that photoelectrically converts the infrared light that has passed through the second light transmitting part.

In some embodiments of the present disclosure, an image sensor includes a first pixel group and a second pixel group disposed in a substrate. The first pixel group includes a first plurality of first sub-groups configured to sense first light of a first color, and a plurality of second sub-groups configured to sense second light of a second color. The second pixel group is arranged adjacent to the first pixel group and includes a second plurality of first sub-groups configured to sense fourth light of the first color, and a plurality of third sub-groups configured to sense third light of a third color. Each of the first plurality of first sub-groups, the second plurality of first sub-groups, the plurality of second sub-groups, and the plurality of third sub-groups including pixels arranged in corresponding N rows and M columns, N and M being positive integers greater than one.