An infrared image sensor includes: a plurality of reference circuits configured to provide a plurality of reference analog values to a plurality of bolometer cells, respectively; a front-end analog circuit configured to collect a plurality of output analog values according to the plurality of reference analog values; and a noise suppression circuit configured to switch a correspondence between the plurality of bolometer cells and the plurality of reference analog values at unit time intervals.

An imaging device according to an embodiment of the present disclosure includes: a first substrate; a second substrate; and a through wiring line. The first substrate includes a photoelectric conversion section and a first transistor in a first semiconductor substrate. The photoelectric conversion section and the first transistor are included in a sensor pixel. The second substrate is stacked on the first substrate and includes a second transistor and an opening that extends through a second semiconductor substrate. The second substrate has an adjuster on at least one of a side surface of the opening near a gate of the second transistor or a region of a surface opposed to the first transistor. The second transistor is included in the sensor pixel. The adjuster adjusts a threshold voltage of the second transistor. The through wiring line is in the opening and electrically couples the first substrate and the second substrate.

A method of reducing noise in an input image by setting, as a local window among color pixels included in the input image, a target pixel and neighboring pixels adjacent to the target pixel, determining color pixel values for the target pixel and each of the neighboring pixels included in the local window, generating local color average values are generated by averaging, color by color, the color pixel values, generating offset color pixel values by converting the color pixel values of the target pixel and the neighboring pixels based on the local color average values, and generating a compensated color pixel value of the target pixel by adjusting the color pixel value of the target pixel based on the offset color pixel values.

Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more Indium Antimonide (InSb)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

A system, method, and computer program product are provided for capturing digital images. In use, an ambient image comprising at least two ambient pixels and a flash image comprising at least two flash pixels is captured, via a camera module. Next, at least one de-noised pixel based on the ambient image is generated. Additionally, a resulting image is generated by combining the at least one de-noised pixel and a corresponding flash pixel. Additional systems, methods, and computer program products are also presented.

A camera includes an image sensor having a first recording channel of a first sensitivity for recording first image data including first pixels and a second recording channel of a second sensitivity lower than the first sensitivity for recording second image data including second pixels. The first pixels and second pixels are associated with one another by capturing a same object area. A control and evaluation unit processing the image data is configured to suppress noise effects in the second image data using a noise suppression filter that assigns a new value to a respective considered second pixel based on second pixels in a neighborhood of the considered second pixel. The noise suppression filter takes the second pixels in the neighborhood into account with a weighting that depends on how similar first pixels associated with the second pixels are to the associated first pixel of the respective considered second pixel.

A device may generate, using a random telegraph signal (RTS) noise generator, a simulated RTS noise as input to a transistor included in an electronic circuit. The device may determine, based on the simulated RTS noise input to the transistor, a simulated output signal from the transistor.

The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.

A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

Disclosed is an image sensing device including a current supply circuit coupled between a supply terminal of a first voltage and a pair of output terminals, an input circuit coupled between the pair of output terminals and a common node, and suitable for receiving a pixel signal and a ramp signal, and a mirroring circuit coupled between the common node and a supply terminal of a second voltage, and suitable for compensating for an operating current, which flows between the common node and the supply terminal of the second voltage, based on a reference current when generating the operating current by mirroring the reference current.