Provided are an image processing device, an imaging element, an image processing method, and an image processing program that satisfactorily generate a plurality of polarized image data from polarized image data acquired from an imaging element. A processor (200B) of an image processing device (200) performs an acquisition process of acquiring first image data from an imaging element (100) in which four first-polarizers having different polarization directions are regularly provided on pixels arranged in a two-dimensional manner, a first polarized image data generation process of performing a demosaicing process on the first image data to generate four pieces of first polarized image data having different polarization directions, and a second polarized image data generation process of generating four or less pieces of second polarized image data by using the four pieces of first polarized image data and a relationship between the polarization directions of the four first-polarizers stored in the memory (200C).

The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked. The timing at which a row drive unit provided in a second substrate outputs a control signal for controlling accumulation and reading of pixel signals in a pixel array provided in a first substrate is compared with the timing at which the control signal output from the row drive unit is detected after passing through the pixel array. Depending on whether or not the timings coincides with each other, a failure is detected. The present disclosure can be applied to an imaging apparatus mounted on a vehicle.

The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

A solid-state imaging element of the present disclosure a pixel. The pixel includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

The present technology relates to an imaging element and an electronic device enabling suppression of generation of noise. Provided with a substrate, a first photoelectric conversion region provided on the substrate, a second photoelectric conversion region provided on the substrate and adjacent to the first photoelectric conversion region, a trench provided on the substrate and between the first photoelectric conversion region and the second photoelectric conversion region, a first impurity region including a first impurity provided on the substrate and on a sidewall of the trench, and a second impurity region including a second impurity provided on the substrate and between the first photoelectric conversion region or the second photoelectric conversion region and the first impurity region. The present technology can be applied to an imaging element.

An imaging device that has an image processing function and is capable of a high-speed operation is provided. The imaging device, which has an additional function such as image processing, can retain analog data obtained by an image capturing operation in a pixel and extract data obtained by multiplying the analog data by a predetermined weight coefficient. In the imaging device, some of potentials used for an arithmetic operation in pixels are generated by redistribution of charge with which wirings are charged. This enables an arithmetic operation to be performed at high speed with low power consumption, compared with the case where the potentials are supplied from another circuit to the pixels.

An image capturing element according to the present disclosure includes a pixel array formed by a plurality of pixels arranged in an array on a substrate, each of the plurality of pixels including a photoelectric conversion element, a transparent layer formed on the pixel array, and a spectroscopic element array formed by a plurality of spectroscopic elements arranged in an array, and each of the plurality of spectroscopic elements is at a position corresponding to one of the plurality of spectroscopic elements inside or on the transparent layer. Each of the plurality of spectroscopic elements includes a plurality of microstructures formed from a material having a refractive index higher than a refractive index of the transparent layer. The plurality of microstructures have a microstructure pattern. Each of the plurality of spectroscopic elements separates incident light into deflected light beams having different propagation directions according to the wavelength and emits the deflected light beams.

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.

The present disclosure relates to a camera package, a manufacturing method of a camera package, and an electronic device capable of reducing a manufacturing cost for forming a lens. The manufacturing method of the camera package according to the present disclosure includes forming a high-contact angle film around a lens forming region on an upper side of a transparent substrate that protects a solid-state imaging element, dropping a lens material in the lens forming region on the upper side of the transparent substrate, and molding the dropped lens material by a mold to form a lens. The present disclosure is applicable to, for example, a camera package and the like in which a lens is arranged above a solid-state imaging element.