A small-sized and highly functional imaging device is provided. The imaging device includes a photoelectric conversion device formed on a silicon substrate and a transistor including a channel formation region in a silicon epitaxial growth layer formed on the silicon substrate. The transistor provided in the epitaxial growth layer has favorable electrical characteristics, so that the imaging device with little noise can be formed. Since the transistor can be formed so as to have a region overlapping with the photoelectric conversion device, the imaging device can be downsized.

An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate.

The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge. The back-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the back surface of the semiconductor substrate and is formed to have a higher impurity concentration than an impurity concentration of a region adjacent to the through-electrode at the central portion of the semiconductor substrate. The front-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the front surface of the semiconductor substrate and is formed to have a higher impurity concentration than the impurity concentration of the region adjacent to the through-electrode at the central portion of the semiconductor substrate.

A functional panel is provided. The functional panel includes a first driver circuit, a second driver circuit, and a region. The first driver circuit supplies a first selection signal, the second driver circuit supplies a second selection signal and a third selection signal, and the region includes a pixel. The pixel includes a first pixel circuit, a light-emitting element, a second pixel circuit, and a photoelectric conversion element. The first pixel circuit is supplied with the first selection signal, the first pixel circuit obtains an image signal on the basis of the first selection signal, the light-emitting element is electrically connected to the first pixel circuit, and the light-emitting element emits light on the basis of the image signal. The second pixel circuit is supplied with the second selection signal and the third selection signal in a period during which the first selection signal is not supplied, the second pixel circuit obtains an imaging signal on the basis of the second selection signal and supplies the imaging signal on the basis of the third selection signal, and the photoelectric conversion element is electrically connected to the second pixel circuit and generates the imaging signal.

There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

This application relates to a liquid crystal module, an electronic device, and a screen interaction system. The liquid crystal module may include a liquid crystal panel, a backlight unit, and a photoelectric sensor array. The photoelectric sensor array, the backlight unit, and the liquid crystal panel are sequentially disposed in a stacked manner. The backlight unit includes a reflection component, and at least a partial region of the reflection component is an infrared transmission region in which infrared light can be transmitted. The photoelectric sensor array includes a plurality of photoelectric sensors, and the plurality of photoelectric sensors can receive the infrared light transmitted through the infrared transmission region. In this application, the photoelectric sensor array is disposed in the liquid crystal module to receive an infrared light signal, to provide a low-cost interaction solution for a device having the liquid crystal module.

An optical coherence tomography device includes a light source, a mirror device including a movable mirror configured to perform a reciprocating operation, a support part configured to support an object, a beam splitter configured to generate interfering light, an optical sensor configured to detect the interfering light, and a control unit. Each of the plurality of pixels included in the optical sensor includes a light receiving part, a plurality of transfer gates, and a discharge gate. The control unit applies an electric signal to the optical sensor so that the plurality of transfer gates are sequentially brought into a charge transfer state in at least three time ranges separated from each other and the discharge gate is brought into a charge discharge state in a time range other than the at least three time ranges for each period of an interferogram signal of the interfering light.

Provided are a solid-state image-capturing device, a semiconductor apparatus, an electronic apparatus, and a manufacturing method that enable improvement in reliability of through electrodes and increase in density of through electrodes. A common opening portion is formed including a through electrode formation region that is a region in which the plurality of through electrodes electrically connected respectively to a plurality of electrode pads provided on a joint surface side from a device formation surface of a semiconductor substrate is formed. A plurality of through portions is formed so as to penetrate to the plurality of respective electrode pads in the common opening portion, and wiring is formed along the common opening portion and the through portions from the electrode pads to the device formation surface corresponding to the respective through electrodes. The present technology can be applied to a layer-type solid-state image-capturing device, for example.

A detection device includes a substrate, a plurality of photodiodes arranged on the substrate, a plurality of transistors provided correspondingly to each of the photodiodes, an insulating film that covers the transistors, and a plurality of lower electrodes each of which is provided above the insulating film correspondingly to each of the photodiodes, and is electrically coupled to the transistors. The lower electrodes and the photodiodes are stacked in this order above the insulating film, and one of the lower electrodes and one of the photodiodes are provided so as to overlap the transistors in a plan view from a direction orthogonal to the substrate.

An electronic module includes a first structure including a flat mounting surface on which an integrated circuit is mounted and a wiring surface including a surface including a portion that changes in a direction perpendicular to the mounting surface, a wire connected to the integrated circuit being extended on the wiring surface, a second structure disposed with a dielectric region interposed with respect to the wiring surface of the first structure, a metal pattern being provided on the second structure, and at least one spacer member that equalizes thickness of the dielectric region between the wire and the metal pattern in an entire range between the mounting surface and the wiring surface including the surface including the portion that changes in the direction perpendicular to the mounting surface.