The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked.

The timing at which a row drive unit provided in a second substrate outputs a control signal for controlling accumulation and reading of pixel signals in a pixel array provided in a first substrate is compared with the timing at which the control signal output from the row drive unit is detected after passing through the pixel array. Depending on whether or not the timings coincides with each other, a failure is detected. The present disclosure can be applied to an imaging apparatus mounted on a vehicle.

The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

The present technology relates to an imaging element and a semiconductor chip that enable the imaging element to be shorter. A first chip including a photodiode, and a second chip including a circuit configured to process a signal from the photodiode are laminated, and an impurity layer is provided on a second surface opposite to a first surface of the second chip on which the first chip is laminated. The impurity layer is formed to have an impurity concentration higher than an impurity concentration of a semiconductor substrate constituting the second chip. In the present technology, for example, an imaging element that is configured by laminating a plurality of chips and is shorter and smaller can be applied.

An image sensing device is provided to include a pixel array comprising a first pixel group and a second pixel group, each pixel configured to sense a distance to a target object in response to modulated light that is incident on the pixel array; a first modulation driver configured to supply, to the first pixel group, a first modulation control signal and a second modulation control signal; and a second modulation driver configured to supply, to the second pixel group, a third modulation control signal and a fourth modulation control signal, wherein the first and second modulation drivers are independently controlled from each other such that at least one of the first modulation control signal, the second modulation control signal, the third modulation control signal, or the fourth modulation control signal has a phase difference from the modulated light.

An imaging device includes: a photoelectric conversion film; a first electrode located above the photoelectric conversion film; a second electrode; a plug coupled to the second electrode; a protective film located above the second electrode; and a wiring line that electrically couples the first electrode to the second electrode. The protective film overlaps the entire plug and does not overlap the photoelectric conversion film in plan view. The second electrode includes a non-overlapping portion that does not overlap the protective film in plan view, and the wiring line is coupled to the non-overlapping portion of the second electrode.

A detection device includes a substrate, a plurality of photodiodes that are arranged in a detection region of the substrate, a plurality of first terminals that are arranged in a first direction in a peripheral region outside the detection region of the substrate, an insulating film that covers the first terminals, and an anisotropic conductive film that is located above the insulating film, and covers the first terminals.

A photoelectric converter According to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section. The optical filter is provided between the organic photoelectric conversion section and the inorganic photoelectric conversion section.

The size of a solid-state imaging device that captures images is reduced. The solid-state imaging device includes an array antenna. A plurality of rectifying antenna circuits is arranged in the array antenna. Each of the plurality of rectifying antenna circuits includes a rectifying antenna and a pixel signal generating unit. The pixel signal generating unit includes a floating diffusion layer, a transfer transistor that transfers charge from the rectifying antenna to the floating diffusion layer in accordance with a transfer signal, a reset transistor that initializes the amount of charge in the floating diffusion layer in accordance with a reset signal, an amplification transistor that amplifies a voltage corresponding to the amount of charge accumulated in the floating diffusion layer, and a selection transistor that outputs a signal of the amplified voltage as a pixel signal in accordance with a selection signal.