To reduce crosstalk between adjacent pixels in an imaging element that acquires polarization information of a subject.

The imaging element is provided with a plurality of pixels, a separation region, and a non-separation region. Each of the plurality of pixels is provided with a polarization unit that polarizes incident light in a specific polarization direction and a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion of the polarized incident light. The separation region is arranged in the semiconductor substrate and separates the plurality of pixels from each other. The non-separation region includes the semiconductor substrate in the clearance formed in the separation region in the vicinity of the corner of the pixel.

There is provided a semiconductor device in which the inter-wiring capacitance of wiring lines provided in any layout is further reduced. A semiconductor device (1) including: a first inter-wiring insulating layer (120) that is provided on a substrate (100) and includes a recess on a side opposite to the substrate; a first wiring layer (130) that is provided inside the recess in the first inter-wiring insulating layer; a sealing film (140) that is provided along an uneven shape of the first wiring layer and the first inter-wiring insulating layer; a second inter-wiring insulating layer (220) that is provided on the first inter-wiring insulating layer to cover the recess; and a gap (150) that is provided between the second inter-wiring insulating layer and the first wiring layer and the first inter-wiring insulating layer. The second inter-wiring insulating layer has a planarized surface that is opposed to the recess.

A semiconductor device that level-shifts a negative voltage and/or a positive voltage is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, an input terminal, and an output terminal. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor and the output terminal. A second terminal of the second transistor is electrically connected to a first terminal of the third transistor. A first terminal of the fourth transistor is electrically connected to a gate of the second transistor and a first terminal of the first capacitor, and a second terminal of the first capacitor is electrically connected to the input terminal. The first transistor, the second transistor, the third transistor, and the fourth transistor are of the same polarity.

In a sensor substrate, a plurality of pixels are formed in a pixel region of a first surface of a flexible base material, and a terminal portion for electrically connecting a cable is provided in the terminal region of the first surface. A conversion layer is provided outside the terminal region of the base material and converts radiation into light. A reinforcing member is provided on a second surface of the base material to reinforce the strength of the base material. A stress neutral plane adjusting member is provided inside the terminal region and in at least a part, corresponding to the inside of the terminal region, of a cable electrically connected to the terminal portion.

In a sensor substrate, a plurality of pixels are formed in a pixel region of a first surface of a flexible base material, and a terminal portion for electrically connecting a cable is provided in the terminal region of the first surface. A conversion layer is provided outside the terminal region of the base material and converts radiation into light. A reinforcing member is provided on a second surface of the base material to reinforce the strength of the base material. A stress neutral plane adjusting member is provided inside the terminal region and in at least a part, corresponding to the inside of the terminal region, of a cable electrically connected to the terminal portion.

A time-of-flight (ToF) image sensor system includes a pixel array, where each pixel of the pixel array is configured to receive a reflected modulated light signal and to demodulate the reflected modulated light signal to generate an electrical signal; a plurality of analog-to-digital converters (ADCs), where each ADC is coupled to at least one assigned pixel of the pixel array and is configured to convert a corresponding electrical signal generated by the at least one assigned pixel into an actual pixel value; and a binning circuit coupled to the plurality of ADCs and configured to generate at least one interpolated pixel, where the binning circuit is configured to generate each of the at least one interpolated pixel based on actual pixel values corresponding to a different pair of adjacent pixels of the pixel array, each of the at least one interpolated pixel having a virtual pixel value.

A time-of-flight (ToF) image sensor system includes a pixel array, where each pixel of the pixel array is configured to receive a reflected modulated light signal and to demodulate the reflected modulated light signal to generate an electrical signal; a plurality of analog-to-digital converters (ADCs), where each ADC is coupled to at least one assigned pixel of the pixel array and is configured to convert a corresponding electrical signal generated by the at least one assigned pixel into an actual pixel value; and a binning circuit coupled to the plurality of ADCs and configured to generate at least one interpolated pixel, where the binning circuit is configured to generate each of the at least one interpolated pixel based on actual pixel values corresponding to a different pair of adjacent pixels of the pixel array, each of the at least one interpolated pixel having a virtual pixel value.

The range-finding apparatus (1) includes a light source (200), an optical receiver (1103), a setting unit (100), a detector (1100), and a calculation unit (300). The light source (200) projects light with a first irradiation pattern in a first period and projects light with a second irradiation pattern in a second period. The optical receiver (1103) receives light to output a pixel signal. The setting unit (100) sets a reference signal on the basis of the pixel signal in the first period. The detector (1100) detects whether or not the pixel signal varies from the reference signal by a first value or more in the second period and outputs a first detection signal indicative of a result obtained by the detection. The calculation unit (300) calculates a distance to a to-be-measured object using the first detection signal.

To provide an imaging circuit and an imaging device capable of achieving switching of output types while a circuit scale is reduced. An imaging circuit according to the present disclosure includes: a photoelectric conversion element that converts incident light into a photocurrent; a first transistor that converts the photocurrent into a voltage signal; a second transistor that amplifies the voltage signal; a third transistor that controls a current to be supplied to the first transistor; and a fourth transistor that is connected to the second transistor.

To provide an imaging circuit and an imaging device capable of achieving switching of output types while a circuit scale is reduced. An imaging circuit according to the present disclosure includes: a photoelectric conversion element that converts incident light into a photocurrent; a first transistor that converts the photocurrent into a voltage signal; a second transistor that amplifies the voltage signal; a third transistor that controls a current to be supplied to the first transistor; and a fourth transistor that is connected to the second transistor.