An imaging device according to an embodiment of the present disclosure includes: a pixel array; and a sensitivity setting section. The pixel array includes a plurality of light-receiving pixels that is divided into a plurality of pixel lines. The plurality of pixel lines includes a first pixel line and a second pixel line that extend in a first direction and are provided side by side in a second direction. The plurality of light-receiving pixels each accumulates electric charge corresponding to an amount of received light and each has light-receiving sensitivity which is variable. The sensitivity setting section sets the light-receiving sensitivity of a second light-receiving pixel in a first period on the basis of a first pixel value corresponding to a result of accumulation in a first light-receiving pixel disposed at a first position in the first pixel line in the first direction. The second light-receiving pixel is disposed at the first position in the second pixel line in the first direction.

The present technology relates to a solid-state imaging device capable of suppressing flare in a CSP-type solid-state imaging device having a cavityless structure, a method of manufacturing the same, and an electronic device. The solid-state imaging device includes: a semiconductor substrate in which a photoelectric conversion section is formed for each pixel; an on-chip lens formed on a light incident surface side of the semiconductor substrate; a light-transmissive substrate that protects the on-chip lens; and a bonding resin that bonds the light-transmissive substrate and the on-chip lens together. A first surface on the light incident surface side of the light-transmissive substrate is flat, and a second surface opposite to the first surface of the light-transmissive substrate has different thicknesses in a central region facing a pixel region of the semiconductor substrate and an outer peripheral region outside the central region. The present technology can be applied to, for example, a CSP-type solid-state imaging device having a cavityless structure or the like.

Provided are an image sensor and a detection system using same, which belong to the field of semiconductor image sensors. The image sensor includes: a first substrate, wherein the first substrate at least includes a photoelectric unit for photoelectric conversion, and N signal transmission channels which are connected to the photoelectric unit, with N being greater than or equal to 1; and a second substrate, which includes N second charge storage units which correspond to the N transmission channels. The transmission channels receive control signals, electrically communicate the photoelectric unit and the second charge storage units, and transfer at least some photo-induced electrons, which are generated in the photoelectric unit, to the second charge storage units. The effect of miniaturization and high integration design of pixels is ensured by means of stacking two substrates; and by means of further providing charge storage units on both of the two substrates, the area of the peripheral region of the pixels can be used, the effect of a higher charge storage amount can be achieved, and the effects such as measurement accuracy can be ensured.

A light detecting device is provided with: a filter array including filters arranged two-dimensionally, each of the filters having a light-incident surface and a light-emitting surface, the filters including multiple types of filters having mutually different transmission spectra; and an image sensor having a light-detecting surface facing the light-emitting surface, the image sensor being provided with light-detecting elements arranged two-dimensionally on the light-detecting surface, wherein the distance between the light-emitting surface and the light-detecting surface is different for each of the filters.

A display apparatus capable of image capturing with high sensitivity is provided. The display apparatus is configured to include first to third switches, a first transistor, a second transistor, and a light-emitting/receiving element. The first switch is electrically connected to a gate of the first transistor. The second switch is positioned between one of a source and a drain of the first transistor and one electrode of the light-emitting/receiving element. The third switch is positioned between the one electrode of the light-emitting/receiving element and a gate of the second transistor. The other of the source and the drain of the first transistor is supplied with a first potential. The other electrode of the light-emitting/receiving element is supplied with a second potential. The light-emitting/receiving element has a function of emitting light of a first color and a function of receiving light of a second color.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A time-of-flight (ToF) image sensor system includes a pixel array, where each pixel of the pixel array is configured to receive a reflected modulated light signal and to demodulate the reflected modulated light signal to generate an electrical signal; a plurality of analog-to-digital converters (ADCs), where each ADC is coupled to at least one assigned pixel of the pixel array and is configured to convert a corresponding electrical signal generated by the at least one assigned pixel into an actual pixel value; and a binning circuit coupled to the plurality of ADCs and configured to generate at least one interpolated pixel, where the binning circuit is configured to generate each of the at least one interpolated pixel based on actual pixel values corresponding to a different pair of adjacent pixels of the pixel array, each of the at least one interpolated pixel having a virtual pixel value.

[Object] A solid-state imaging apparatus that can suppress degradation of image quality caused by a groove between lenses is provided, and a method for manufacturing the solid-state imaging apparatus is also provided.

[Solving Means]

A solid-state imaging apparatus according to the present disclosure includes multiple photoelectric conversion sections, and multiple lenses provided above the multiple photoelectric conversion sections. The multiple lenses each include a groove provided between the lenses, and the groove includes a bottom surface shaped to protrude downward.

A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.

An imaging system includes: a first light source that emits first light having a spectrum including discrete first frequency components arranged at first frequency intervals; a second light source that emits second light having a spectrum including discrete second frequency components arranged at second frequency intervals, the second frequency intervals being different from the first frequency intervals; a mixing optical system that mixes the first light and the second light to generate third light including at least one optical beat the intensity of which changes at a beat frequency expressed by the difference between at least one of the discrete first frequency components and at least one of the discrete second frequency components; an imaCCging element having a variable sensitivity in an exposure period; and a control circuit that changes the sensitivity of the imaging element at the beat frequency of the at least one optical beat.