Image-capturing device includes: an image sensor that includes a first pixel and a second pixel, each having a filter unit that can be switched to a light-shielding state in which light is blocked or to a transmissive state in which light is transmitted, a photoelectric conversion unit that generates an electric charge through photoelectric conversion of light transmitted through the filter unit and an output unit that outputs a signal based upon electric charge generated at the photoelectric conversion unit, and; a correction unit that corrects a signal output from the output unit of the first pixel while the filter unit of the first pixel is in a transmissive state, based upon a signal output from the output unit of the first pixel with the filter unit of the first pixel set in a light-shielding state and with the filter unit of the second pixel set in a transmissive state.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit. The image sensing circuit includes pixels arranged in rows and columns. Each one of the bitlines is coupled to a corresponding one of the columns. The voltage supply grid is coupled to the pixels. The control circuit is coupled to output at least a row select signal and a transfer signal to the rows. Each one of the rows is selectively coupled to the bitlines to selectively output image data signals in response to the row select signal and the transfer signal. Each one of the rows is further selectively coupled to the bitlines to selectively clamp the bitlines in response to the row select signal and the transfer signal. Each one of the rows is selectively decoupled from the bitlines in response to the row select signal.

A solid-state imaging device that can further improve the quality and reliability of the solid-state imaging device is provided. There is provided a solid-state imaging device including: a sensor substrate having an imaging element that generates a pixel signal in a pixel unit; and at least one chip having a signal processing circuit necessary for signal processing of the pixel signal, wherein the sensor substrate and the at least one chip are electrically connected to and stacked on each other, and wherein a protective film is formed on at least a part of a side surface of the at least one chip, the side surface being connected to a surface of the at least one chip on a side on which the at least one chip is stacked on the sensor substrate.

Provided are an imaging device having more superior optical characteristics, a method of manufacturing the imaging device, and an electronic device at a lower cost. An imaging device according to an embodiment includes: an imaging element (10) including a solid-state imaging element (100) on which a light receiving surface in which light receiving elements are arranged in a two-dimensional lattice shape is formed, and a protection member (101, 102) disposed on a side of the light receiving surface with respect to the solid-state imaging element, in which the imaging element includes a curved portion curved from the light receiving surface of the solid-state imaging element toward a surface on an opposite side of the light receiving surface.

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

A solid-state imaging device includes a photoelectric converter, a transfer gate transistor, and an overflow gate transistor. The photoelectric converter is provided in a semiconductor substrate and generates photocharge. The transfer gate transistor is provided at a surface of the semiconductor substrate as a vertical transistor and reads the photocharge stored in the photoelectric converter. The overflow gate transistor is provided at the surface of the semiconductor substrate as a planar transistor and transfers the photocharge overflowing from the photoelectric converter.

A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.