Provided is a voice sensor comprising a piezoelectric material layer includes a substrate, a support layer, a metal layer, a piezoelectric material layer on the metal layer and an electrode on the piezoelectric material layer, and the substrate integrally supports a device layer of the voice sensor by exposing a part of a thin film including the piezoelectric material layer, the electrode and a polymer layer.

Provided is a voice sensor comprising a piezoelectric material layer includes a substrate, a support layer, a metal layer, a piezoelectric material layer on the metal layer and an electrode on the piezoelectric material layer, and the substrate integrally supports a device layer of the voice sensor by exposing a part of a thin film including the piezoelectric material layer, the electrode and a polymer layer.

A piezoelectric MEMS microphone comprising a multi-layer sensor that includes at least one piezoelectric layer between two electrode layers, with the sensor being dimensioned such that it provides a near maximized ratio of output energy to sensor area, as determined by an optimization parameter that accounts for input pressure, bandwidth, and characteristics of the piezoelectric and electrode materials. The sensor can be formed from single or stacked cantilevered beams separated from each other by a small gap, or can be a stress-relieved diaphragm that is formed by deposition onto a silicon substrate, with the diaphragm then being stress relieved by substantial detachment of the diaphragm from the substrate, and then followed by reattachment of the now stress relieved diaphragm.

A piezoelectric MEMS microphone comprising a multi-layer sensor that includes at least one piezoelectric layer between two electrode layers, with the sensor being dimensioned such that it provides a near maximized ratio of output energy to sensor area, as determined by an optimization parameter that accounts for input pressure, bandwidth, and characteristics of the piezoelectric and electrode materials. The sensor can be formed from single or stacked cantilevered beams separated from each other by a small gap, or can be a stress-relieved diaphragm that is formed by deposition onto a silicon substrate, with the diaphragm then being stress relieved by substantial detachment of the diaphragm from the substrate, and then followed by reattachment of the now stress relieved diaphragm.

A MEMS and/or NEMS pressure sensor including, in a substrate: a stationary portion and a portion movable relative to the stationary portion, the movable portion including a sensitive element configured to move in the plane of the sensor under effect of a pressure variation; a stress gauge detecting movement of the sensitive element in the plane of the sensor due to the pressure variation; electrodes actuating the sensitive element, the actuating electrodes being borne partially by the stationary portion and partially by the movable portion, the actuating electrodes being commanded to automatically control positionwise the movement of the sensitive element; a mechanism commanding the actuating electrodes, which are configured, on the basis of signals emitted by the gauge, to bias the actuating electrodes to automatically control positionwise the movement of the sensitive element.

A transducer includes a first connection portion connecting a first tip and a second tip to each other. The first connection portion is surrounded by a split slit connecting a center of the first tip, a center of a base, and a center of the second tip, the first tip, and the second tip.

A transducer includes a first connection portion connecting a first tip and a second tip to each other. The first connection portion is surrounded by a split slit connecting a center of the first tip, a center of a base, and a center of the second tip, the first tip, and the second tip.

A microphone package and an electronic apparatus including the same are provided. The microphone package includes a substrate in which an acoustic hole and a via hole are formed; an acoustic sensor attached to a front surface of the substrate and covering the acoustic hole; a first electrode pad provided on the front surface of the substrate; a second electrode pad provided on a rear surface of the substrate and electrically connected to the first electrode pad through the via hole; and a third electrode pad on a side surface of the substrate and electrically connected to the second electrode pad.

The present disclosure provides a vibration sensor. The vibration sensor may include a vibration receiver and an acoustic transducer. The vibration receiver may include a housing, a limiter and a vibration unit. The housing and the acoustic transducer may form an acoustic cavity. The vibration unit may be located in the acoustic cavity to separate the acoustic cavity into a first acoustic cavity and a second acoustic cavity. The acoustic transducer may be acoustically connected to the first acoustic cavity. The housing may be configured to generate a vibration based on an external vibration signal. The vibration unit may change an acoustic pressure within the first acoustic cavity in response to the vibration of the housing, such that the acoustic transducer generates an electrical signal. The vibration unit may include a mass element and an elastic element. A first side of the elastic element may be connected around a side wall of the mass element. A second side of the elastic element may be connected with the limiter.

A vibration sensor having a moveable mass being suspended in a suspension member and being adapted to move in response to vibrations or accelerations. The moveable mass and the suspension member are rigidly connected across one or more gaps formed by respective opposing surfaces of the moveable mass and the suspension member. The vibration sensor includes a damping arrangement having a damping substance. The moveable mass is arranged to interact directly or indirectly with the damping substance in order to reduce a mechanical resonance peak of the vibration sensor.