A microphone has a MEMS device, a driver, and a control unit. The MEMS device outputs a first electrical signal according to an acoustic pressure. The driver vibrates the MEMS device by a drive signal. The control unit calculates a correction value for correcting the first electric signal based on a second electric signal output from the MEMS device when the MEMS device is vibrated by the drive signal.

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.

A microphone and its manufacturing method, relating the semiconductor techniques, are presented. The microphone comprises: a substrate comprising an opening, a first electrode layer at the bottom of the opening, and at least one groove adjacent to the first electrode layer, with the groove and the opening on two opposing sides of a bottom surface of the first electrode layer; a separation material layer filling the groove; and a second electrode layer on the separation material layer, wherein the first electrode layer, the separation material layer, and the second electrode layer form a cavity. In this inventive concept, the separation material layer on the groove works as an anchor node embedding in the substrate to increases the effective contact area and the bonding power, and to improve the bonding quality between the second electrode layer and the substrate, which results in a strengthened second electrode layer.

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

A sensor includes a membrane electrode, a counter-electrode, and at least one spring. The sensor can include a structure; a membrane electrode, which is deformable as a consequence of pressure and which is in contact with the structure; a counter-electrode mechanically connected to the structure and separated from the membrane electrode by a gap; and at least one spring mechanically connected to the membrane electrode and the counter-electrode, so as to exert an elastic force between the membrane electrode and the counter-electrode.

A transducer assembly can include a base. The transducer assembly can include a stress isolation standoff located on the base. The transducer assembly can include a MEMS die disposed on the stress isolation standoff. The transducer assembly can include a die attach adhesive disposed between the MEMS die and the base. The die attach adhesive can bond the MEMS die to the base. The stress isolation standoff can be embedded in the die attach adhesive between the base and the MEMS die.

A MEMS transducer includes a transducer substrate, a counter electrode, and a diaphragm. The counter electrode is coupled to the transducer substrate. The diaphragm is oriented substantially parallel to the counter electrode and is spaced apart from the counter electrode to form a gap. A back volume of the MEMS transducer is an enclosed volume positioned between the counter electrode and the diaphragm. A height of the gap between the counter electrode and the diaphragm is less than two times the thermal boundary layer thickness within the back volume at an upper limit of the audio frequency band of the MEMS transducer.

A capacitive transducer or microphone includes a first substrate of one or more layers and which includes a first surface, a first cavity in the first surface, and a mesa diaphragm that spans the first cavity. The capacitive transducer or microphone includes a second substrate fixed to the first substrate. The second substrate has one or more layers which includes a second cavity having a nonplanar (e.g., contoured or structured or stepped) bottom surface that faces the mesa diaphragm. A shape or relief of the bottom surface of the cavity may advantageously be, to at least some degree, complementary to a deformed shape of the diaphragm. The second substrate may include one or more acoustic holes, non-uniformly distributed thereacross. One or more vents may vent the second cavity.

A sound transducer device includes a multilayer component board having a first side and an opposite second side, and a sound port extending between the first and second sides of the multilayer component board. The sound transducer also includes a MEMS sound transducer die including a suspended membrane structure, wherein the MEMS sound transducer die is arranged at the first side of the multilayer component board such that the suspended membrane structure is in fluid communication with the sound port. The sound transducer also includes a mesh structure for providing an environmental barrier, the mesh structure covering the sound port from either one of the first and second sides of the multilayer component board.

A MEMS device includes a package for providing an inner volume, a MEMS microphone arranged in the inner volume, a sound port through the package to the inner volume, and a passive acoustic attenuation filter acoustically coupled to the sound port.