Patent classifications
H04R19/04
MEMS microphone and method of manufacturing the same
A MEMS microphone and a manufacturing method thereof are provided. The MEMS microphone includes: a substrate configured to have a through portion formed in a central portion thereof; a vibration membrane configured to have an uneven structure formed on the through portion of the substrate; and a fixed membrane provided on an upper position spaced apart from the vibration membrane by a predetermined distance.
MEMS microphone and method of manufacturing the same
A MEMS microphone and a manufacturing method thereof are provided. The MEMS microphone includes: a substrate configured to have a through portion formed in a central portion thereof; a vibration membrane configured to have an uneven structure formed on the through portion of the substrate; and a fixed membrane provided on an upper position spaced apart from the vibration membrane by a predetermined distance.
Structure of micro-electro-mechanical-system microphone and method for fabricating the same
A structure of micro-electro-mechanical-system (MEMS) microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A membrane is disposed within the second opening of the dielectric layer. A peripheral region of the membrane is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer. The backplate layer includes a protection layer, having a peripheral region disposed on the dielectric layer and a central region with venting holes over the second opening. The central region of the protection layer further has anti-sticky structures at a side of the protection layer toward the membrane. An electrode layer is disposed on the side of the protection layer, surrounding the anti-sticky structures.
Structure of micro-electro-mechanical-system microphone and method for fabricating the same
A structure of micro-electro-mechanical-system (MEMS) microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A membrane is disposed within the second opening of the dielectric layer. A peripheral region of the membrane is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer. The backplate layer includes a protection layer, having a peripheral region disposed on the dielectric layer and a central region with venting holes over the second opening. The central region of the protection layer further has anti-sticky structures at a side of the protection layer toward the membrane. An electrode layer is disposed on the side of the protection layer, surrounding the anti-sticky structures.
METHOD FOR MANUFACTURING A LOW-NOISE ELECTROACOUSTIC TRANSDUCER
A method for manufacturing an electroacoustic transducer includes a frame; an element movable relative to the frame, the movable element including a membrane and a membrane rigidifying structure; a first transmission arm, the movable element being coupled to one end of the first transmission arm; in which method the membrane of the movable element is moved away from the frame by using a sacrificial layer of greater thickness at least at the periphery of the membrane.
METHOD FOR MANUFACTURING A LOW-NOISE ELECTROACOUSTIC TRANSDUCER
A method for manufacturing an electroacoustic transducer includes a frame; an element movable relative to the frame, the movable element including a membrane and a membrane rigidifying structure; a first transmission arm, the movable element being coupled to one end of the first transmission arm; in which method the membrane of the movable element is moved away from the frame by using a sacrificial layer of greater thickness at least at the periphery of the membrane.
Efficient Seamless Switching of Sigma-Delta Modulators
A digital microphone includes at least one integrator; a state detection and parameter control component directly coupled to an output of the integrator; and a signal processing component coupled to an output of the state detection and parameter control component, wherein a parameter of the signal processing component includes a first value in a first operational mode and a second value in a second operational mode different from the first operational mode.
PRE-AMPLIFICATION CONDITIONING CIRCUIT FOR A TRANSDUCER AUDIO DEVICE
A microphone system includes a microphone and a pre-amplification conditioning circuit configured within a housing and comprising a pair of matched JFETs configured in a differential pair with common-source configuration and, when biased, are operable to receive and amplify the differential microphone output signal. The microphone further includes a pair of BJTs configured as a complimentary feedback transistor pair with each of the pair of BJTs coupled in parallel to a corresponding one of the pair of matched JFETs, and a current sink coupled to the matched JFETs and corresponding emitter electrodes of the BJTs and operable to maintain a fixed total direct current through each of the matched JFETs and BJTs, which reduces the JFETs corresponding electrical load, reduces signal noise, and increases a maximum amplified microphone output signal level at the drains of the matched JFETs.
MICRO-ELECTROMECHANICAL SYSTEM AND METHOD FOR FABRICATING MEMS HAVING PROTECTION WALL
A micro electromechanical system (MEMS) includes a substrate, a semiconductor device and a protection wall. The substrate has a surface. The semiconductor device is disposed on the surface. The protection wall has a poly-silicon layer surrounding the semiconductor device and connecting to the surface.
MICRO-ELECTROMECHANICAL SYSTEM AND METHOD FOR FABRICATING MEMS HAVING PROTECTION WALL
A micro electromechanical system (MEMS) includes a substrate, a semiconductor device and a protection wall. The substrate has a surface. The semiconductor device is disposed on the surface. The protection wall has a poly-silicon layer surrounding the semiconductor device and connecting to the surface.