A hole injection layer provided between a first electrode and each of light emitting layers, and an electron injection layer provided between a second electrode and each of light emitting layers, overlap only inward from an end portions each of the light emitting layers when viewed in plan view.

A method for producing an organic EL device in this disclosure includes the steps of providing an element substrate including a substrate and a plurality of organic EL devices arranged on the substrate; and forming a thin film encapsulation structure over the element substrate. The step of forming the thin film encapsulation structure includes the steps of forming a first inorganic barrier layer over the element substrate; condensing a photocurable resin on the first inorganic barrier layer; irradiating a plurality of selected regions of the photocurable resin with a laser beam to cure at least a part of the photocurable resin, thus to form a photocurable resin layer; removing an uncured part of the photocurable resin; and forming a second inorganic barrier layer, covering the photocurable resin layer, on the first inorganic barrier layer.

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a muitilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources and temporally and spatially modulating a power of the plurality of laser light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the laser light for the interface between the flexible substrate region (30d) and the glass base (10).

To enable realization of higher quality display.

Provided is a display device including a plurality of light emitting elements formed on a substrate, and a first film laminated on the plurality of light emitting elements, in which a convex portion protruding upward exists in a partial region of a light emitting region of the light emitting elements, and an upper surface of the first film has a substantially spherical convex shape corresponding to the convex portion.

There is provided a display device capable of decreasing a drive voltage. A display device includes: a first electrode provided for each of a plurality of light emitting elements arranged on a flat surface; at least two or more kinds of inorganic insulating layers which separate each of the light emitting elements and have different concentrations of hydroxy groups on surfaces of the layers; an organic light emitting layer provided on the first electrode and the two or more kinds of inorganic insulating layers; and a second electrode provided on the organic light emitting layer.

A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.

A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.

A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

An organic EL device of one aspect of the disclosure includes: a base material; an insulating layer provided with a recessed portion on an upper face thereof; and a light-emitting element including a reflective layer provided on at least a surface of the recessed portion, a filling layer having optical transparency and filling the inside of the recessed portion with the reflective layer interposed between the filling layer and the recessed portion, a first electrode having optical transparency and provided on at least an upper layer side of the filling layer, an organic layer containing at least a light-emitting layer provided on an upper layer of the first electrode, a second electrode having optical transparency and provided on an upper layer side of the organic layer, and an edge cover layer covering at least an end portion of the first electrode, wherein the organic electroluminescence device includes a plurality of unit light emitting regions separated from one another, an excavated portion is provided in the insulating layer between adjacent unit light emitting regions, and at last the filling layer is provided inside the excavated portion.

An organic EL device of one aspect of the disclosure includes: a base material; an insulating layer provided with a recessed portion on an upper face thereof; and a light-emitting element including a reflective layer provided on at least a surface of the recessed portion, a filling layer having optical transparency and filling the inside of the recessed portion with the reflective layer interposed between the filling layer and the recessed portion, a first electrode having optical transparency and provided on at least an upper layer side of the filling layer, an organic layer containing at least a light-emitting layer provided on an upper layer of the first electrode, a second electrode having optical transparency and provided on an upper layer side of the organic layer, and an edge cover layer covering at least an end portion of the first electrode, wherein the organic electroluminescence device includes a plurality of unit light emitting regions separated from one another, an excavated portion is provided in the insulating layer between adjacent unit light emitting regions, and at last the filling layer is provided inside the excavated portion.

An electro-optical device includes a circuit substrate including a flattening layer provided on a surface of the circuit substrate, at least one electro-optical element provided on the flattening layer, a sealing film configured to seal the electro-optical element and including at least a resin layer, and a frame-shaped bank surrounding the flattening layer and covered by the resin layer on an inner side of the frame-shaped bank. In a plan view, an unevenness is provided at a peripheral edge of the flattening layer facing the frame-shaped bank.