H05B33/10

DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DIODE

A display device, including a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting devices electrically connected to the metal pads. A respective semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer, a conductive electrode on the p-type semiconductor layer; and a passivation layer configured to surround the respective semiconductor light emitting device and including a through hole through which the conductive electrode is exposed. Further, the conductive electrode includes a protruding portion protruding through the through hole of the passivation layer and overlapping outer surfaces of the passivation layer. Also, the protruding portion of the conductive electrode contacts a corresponding metal pad, and a width of the protruding portion of the conductive electrode is greater than a width of the corresponding metal pad.

DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DIODE

A display device, including a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting devices electrically connected to the metal pads. A respective semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer, a conductive electrode on the p-type semiconductor layer; and a passivation layer configured to surround the respective semiconductor light emitting device and including a through hole through which the conductive electrode is exposed. Further, the conductive electrode includes a protruding portion protruding through the through hole of the passivation layer and overlapping outer surfaces of the passivation layer. Also, the protruding portion of the conductive electrode contacts a corresponding metal pad, and a width of the protruding portion of the conductive electrode is greater than a width of the corresponding metal pad.

DISPLAY MODULE AND METHOD FOR COATING THE SAME
20170359865 · 2017-12-14 ·

The present disclosure provides a display module and a method for coating the same, which can prevent and/or reduce the occurrence of black seam between display modules that are arranged adjacent to each other. According to an example aspect of the present disclosure, a display module includes a printed circuit board; a plurality of luminous elements arranged at predetermined intervals on the printed circuit board; and a coating layer comprising a coating disposed between the respective luminous elements, disposed around side surfaces of the respective luminous elements positioned at an outermost, and formed to have a height that is substantially equal to a height of the side surfaces of the luminous elements, the coating being configured to block side light of the respective luminous elements.

DISPLAY MODULE AND METHOD FOR COATING THE SAME
20170359865 · 2017-12-14 ·

The present disclosure provides a display module and a method for coating the same, which can prevent and/or reduce the occurrence of black seam between display modules that are arranged adjacent to each other. According to an example aspect of the present disclosure, a display module includes a printed circuit board; a plurality of luminous elements arranged at predetermined intervals on the printed circuit board; and a coating layer comprising a coating disposed between the respective luminous elements, disposed around side surfaces of the respective luminous elements positioned at an outermost, and formed to have a height that is substantially equal to a height of the side surfaces of the luminous elements, the coating being configured to block side light of the respective luminous elements.

Luminescent microspheres and preparation method thereof

Luminescent microspheres and a preparation method thereof are disclosed. The preparation method includes: 1) preparing cadmium oxide-doped silica microspheres; 2) adding the silica microspheres to a mixed solution of octadecene/oleic acid or trioctylamine (TOA)/oleic acid, and heating a resulting mixture to a boiling point so that the microspheres swell at high temperature and the oleic acid penetrates into the microspheres to react with CdO to obtain an organic cadmium-adsorbed silica suspension; and 3) adding a selenium precursor to the obtained organic cadmium-adsorbed silica suspension to obtain the luminescent microspheres, where, the selenium precursor reacts with the adsorbed organic cadmium to form CdSe. The luminescent microspheres provided in the present disclosure have high fluorescence efficiency and prominent stability, require no barrier materials such as barrier films for protection, and can be directly used for light conversion materials with high color gamut such as luminescent films, luminescent plates, Mini-LEDs, and Micro-LEDs.

Luminescent microspheres and preparation method thereof

Luminescent microspheres and a preparation method thereof are disclosed. The preparation method includes: 1) preparing cadmium oxide-doped silica microspheres; 2) adding the silica microspheres to a mixed solution of octadecene/oleic acid or trioctylamine (TOA)/oleic acid, and heating a resulting mixture to a boiling point so that the microspheres swell at high temperature and the oleic acid penetrates into the microspheres to react with CdO to obtain an organic cadmium-adsorbed silica suspension; and 3) adding a selenium precursor to the obtained organic cadmium-adsorbed silica suspension to obtain the luminescent microspheres, where, the selenium precursor reacts with the adsorbed organic cadmium to form CdSe. The luminescent microspheres provided in the present disclosure have high fluorescence efficiency and prominent stability, require no barrier materials such as barrier films for protection, and can be directly used for light conversion materials with high color gamut such as luminescent films, luminescent plates, Mini-LEDs, and Micro-LEDs.

DISPLAY DEVICE AND SEMICONDUCTOR DEVICE

A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Metal complexes

The present invention relates to metal complexes and to electronic devices, in particular organic electroluminescent devices, comprising these metal complexes.

Metal complexes

The present invention relates to metal complexes and to electronic devices, in particular organic electroluminescent devices, comprising these metal complexes.

Organic electroluminescent element
09837625 · 2017-12-05 · ·

The organic electroluminescent element prevents degradation of phosphorescent luminescent organic metal complexes in a light emitting layer, has a long life, and has superior color stability during continuously drive. The organic electroluminescent element has a blue light emitting layer with a phosphorescent light emitting organometallic complex (A) with a local maximum phosphorescent light emission wavelength on the short wave side of 480 nm or less, a phosphorescent light emitting organometallic complex (B), and a host compound. The content of complex (A) is greater than the content of the complex (B). The complex (A) and the host are such that a single layer made from complex (A) and the host compound, the value for the ratio ((D)/(C)) of the percent of remaining luminescence (C) which UV irradiation with a wavelength of 365 nm and the percent of remaining luminescence (D) with UV irradiation by a HgXe light source is 0.75-0.95.