According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (212). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (212). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes the first light scanning for scanning the interface in a first direction with the light in the form of a line beam, and the second light scanning for scanning the interface in a second direction with the light. In each of the first and second light scanning, the irradiation intensity is modulated such that the intensity for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity for the interface between the flexible substrate regions (30d) and the glass base (10).

A display device includes a first substrate, a plurality of light emitting elements that is provided on the first substrate, a second substrate that is provided so as to face a plurality of the light emitting elements, a wall portion that is provided on the first substrate, surrounds an effective pixel area, and supports the second substrate, and a filling resin layer with which a space surrounded by the first substrate, the second substrate, and the wall portion is filled.

A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.

In EL display panels fabricated by vapor deposition, a vapor-deposition fine mask is employed to form red, green, and blue pixels. An issue, however, has been that misregistration of the vapor-deposition fine mask occurs, lowering manufacturing yields. To resolve this issue, on a thin-film transistor (TFT) substrate, red, green, and blue pixel electrodes are fashioned in matrix form. The TFT substrate is conveyed into a vapor-deposition chamber. Under a vacuum, an organic evaporation source is employed to codeposit a light-emitting layer composed of a host material and a red guest material on the TFT substrate display screen. An ultraviolet laser beam generated by a laser device is optically guided into the vapor-deposition chamber through a laser window and directed on the light-emitting layer formed onto the green and blue pixel electrodes. Positional selecting on the green and blue pixels is carried out by controlling a mirror galvanometer.

An oxidation protective film is continuously provided from the display area to the frame area so as to be in contact with the upper electrode. A first inorganic sealing film is provided on the substrate so as to cover the upper electrode and the oxidation protective film. An organic sealing film is provided on the first inorganic sealing film. A second inorganic sealing film is provided on the organic sealing film and is in direct contact with the first inorganic sealing film in a periphery of the organic sealing film. The oxidation protective film covers at least the contact area of the upper electrode in the frame area and is not provided in the periphery in which the first inorganic sealing film and the second inorganic sealing film are in direct contact with each other.

Included are the steps of: forming a laminated body (7) by disposing a resin layer (12), an inorganic layer (3) having mean stress (Px) of 0 (zero) or having tensile stress, a TFT layer (4), an OLED element layer (5), and a sealing layer (6) in this order on an upper side of a supporting substrate (50); and separating the supporting substrate (50) from the laminated body (7).

A display device of the present disclosure includes: an organic EL layer deposited on a circuit unit formed on a substrate via an insulating film; a cathode electrode deposited on the organic EL layer; a groove formed along a direction of arrangement of pixels between the pixels in the insulating film; and a contact electrode that is provided at a bottom of the groove and receives a predetermined potential. Moreover, the cathode electrode is electrically connected to the contact electrode in the groove.

According to an aspect of the disclosure, in a non-display region inside a display region, an oxide semiconductor layer is provided in an island shape, a first opening is provided in a first inorganic insulating film so as to expose the oxide semiconductor layer in the non-display region, a common functional layer is provided so as to extend from the display region to the non-display region, and a second opening is provided so as to expose the oxide semiconductor layer in the common functional layer, a peripheral end of the second opening being surrounded by a peripheral end of the first opening in a plan view.

An aspect of the disclosure, in a non-display region, an oxide semiconductor layer is provided in a frame-like shape along a peripheral edge of a through hole, a first opening is provided in a first inorganic insulating film so as to surround the through hole in a plan view and expose the oxide semiconductor layer in the non-display region, a common functional layer is provided so as to extend from a display region to the non-display region, a second opening is provided in a frame-like shape so as to surround the through hole in a plan view and expose the oxide semiconductor layer in the common functional layer, and a second inorganic insulating film is in contact with the oxide semiconductor layer via the second opening.