A solid or liquid fuel to plasma to electricity power source that provides at least one of electrical and thermal power comprising (i) at least one reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical fuel mixture comprising at least two components chosen from: a source of H.sub.2O catalyst or H.sub.2O catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of H.sub.2O catalyst or H.sub.2O catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a material to cause the fuel to be highly conductive, (iii) a fuel injection system such as a railgun shot injector, (iv) at least one set of electrodes that confine the fuel and an electrical power source that provides repetitive short bursts of low-voltage, high-current electrical energy to initiate rapid kinetics of the hydrino reaction and an energy gain due to forming hydrinos to form a brilliant-light emitting plasma, (v) a product recovery system such as at least one of an augmented plasma railgun recovery system and a gravity recovery system, (vi) a fuel pelletizer or shot maker comprising a smelter, a source or hydrogen and a source of H.sub.2O, a dripper and a water bath to form fuel pellets or shot, and an agitator to feed shot into the injector, and (vii) a power converter capable of converting the high-power light output of the cell into electricity such as a concentrated solar power device comprising a plurality of ultraviolet (UV) photoelectric cells or a plurality of photoelectric cells, and a UV window.

A surface treatment system includes a holder configured to secure an object within the holder and a surface treatment device that is configured to treat a surface of the object within the holder with two types of surface treatments. The device is capable of producing a plasma or a flame at its nozzle for surface treatment. By controlling the materials supplied to the device and the way in which is operated, either a flame or plasma is produced. Thus, the surface treatment system is capable of treating a wide range of materials for printing by a direct-to-object printer.

A method of sterilizing an object with atomic nitrogen from a nitrogen plasma comprises the steps of positioning the object in a sterilization chamber, and conditioning the object present in the chamber. The step of conditioning includes a first stage of injecting atomic nitrogen into the chamber, during which a first concentration of atomic nitrogen in the chamber is imposed, a suction stage performed after the first injection stage, during which the chamber is evacuated, and a second stage of injecting atomic nitrogen into the chamber that is performed after the suction stage, during which a second concentration of atomic nitrogen is imposed in the chamber. The method further comprises a sterilization step of sterilizing the object, performed after the conditioning, and includes injecting atomic nitrogen into the chamber, during which step a concentration of atomic nitrogen in the chamber is imposed that is greater than the first and second concentrations.

A method of sterilizing an object with atomic nitrogen from a nitrogen plasma includes the steps of placing the object in a sterilization chamber and a sterilization half-cycle for sterilizing the object present in the chamber. The sterilization half-cycle comprises an alternation between stages of injecting atomic nitrogen into the chamber and of intermediate stages, each intermediate stage including at least one suction stage during which the chamber is evacuated.

A light emitting sealed body includes a housing which stores a discharge gas and is provided with a first opening to which first light is incident and a second opening from which second light is emitted, a first window portion which includes a first window member allowing the first light to be transmitted therethrough and hermetically seals the first opening, and a second window portion which includes a second window member allowing the second light to be transmitted therethrough and hermetically seals the second opening. Each of the first window member and the second window member is hermetically fixed to the housing by a joining material. A protection layer which covers the joining material is provided at at least one of a first joining position between the first window member and the housing and a second joining position between the second window member and the housing.

In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

In one aspect, a method is described. The method may include exposing a printing surface to a first plasma in order to increase a hydrophilicity of the printing surface. The method may further include, after increasing the hydrophilicity of the printing surface, depositing a printing material on the printing surface. Additionally, the method may include, after depositing the printing material on the printing surface, exposing the printing surface to a second plasma in order to increase a hydrophobicity of the printing surface.

A surface treatment system includes a holder configured to secure an object within the holder and a surface treatment device that is configured to treat a surface of the object within the holder with two types of surface treatments. The device is capable of producing a plasma or a flame at its nozzle for surface treatment. By controlling the materials supplied to the device and the way in which is operated, either a flame or plasma is produced. Thus, the surface treatment system is capable of treating a wide range of materials for printing by a direct-to-object printer.

In order to prevent the global warming by taking hydrogen out of gases such as nitrogen, carbon dioxide, etc., a reactor 70 made of stainless steel is heated, at a temperature above 500? C., at a bottom portion where alkaline metal such as Li, Na, Ka, etc. is accommodated to be melted so that fine particles fly out to a plasma space 74 formed above the alkaline metal and having a function to amplify energy by the heat-oscillation of metal, and the first electromagnetic waves are emitted from a reactor wall to generate the second electromagnetic waves having an amplified energy in the plasma space, and further the second electromagnetic waves separate protons of nitrogen gas, carbon dioxide gas, etc. to produce hydrogen.

In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.