A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

A solid or liquid fuel to plasma to electricity power source that provides at least one of electrical and thermal power comprising (i) at least one reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical fuel mixture comprising at least two components chosen from: a source of H.sub.2O catalyst or H.sub.2O catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of H.sub.2O catalyst or H.sub.2O catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a material to cause the fuel to be highly conductive, (iii) a fuel injection system such as a railgun shot injector, (iv) at least one set of electrodes that confine the fuel and an electrical power source that provides repetitive short bursts of low-voltage, high-current electrical energy to initiate rapid kinetics of the hydrino reaction and an energy gain due to forming hydrinos to form a brilliant-light emitting plasma, (v) a product recovery system such as at least one of an augmented plasma railgun recovery system and a gravity recovery system, (vi) a fuel pelletizer or shot maker comprising a smelter, a source or hydrogen and a source of H.sub.2O, a dripper and a water bath to form fuel pellets or shot, and an agitator to feed shot into the injector, and (vii) a power converter capable of converting the high-power light output of the cell into electricity such as a concentrated solar power device comprising a plurality of ultraviolet (UV) photoelectric cells or a plurality of photoelectric cells, and a UV window.

An enclosure is configured to receive an electromagnetic wave from a mm wave emitter by a first waveguide positioned between the mm wave emitter and the enclosure. The enclosure includes one or more components configured to manage transmission of the electromagnetic wave in the first mode to a second waveguide positioned relative to a borehole of a well to be formed by the electromagnetic wave transmitted through the second waveguide. The components can include a first port at which a gas is received, a focusing mirror, a frequency sensor, a power measurement sensor, an arc detector, a cooled wire grid, a load cell provided on an exterior surface of the enclosure, or a barrier window. Related apparatus, systems, techniques, and articles are also described.

An approach is disclosed processing elements from input gases. The input gases are received into an electromagnetic plasma separator where the input gases are heated to at least 8000 degrees Kelvin, via a plasma combustor, to form a gas plasma element state. The gas plasma element state is sent through a series of concentrated super conducting magnets M (M.sub.1, M.sub.2, . . . , M.sub.i, . . . , M.sub.n), i>1, which act as targeted plasma separators. Each super conducting magnet M.sub.i in the series of concentrated super conducting magnets M (M.sub.1, M.sub.2, . . . , M.sub.i, . . . , M.sub.n) extracts a corresponding individual plasma state element from the gas plasma into a corresponding separated element S (S.sub.1, S.sub.2, . . . . S.sub.i, . . . , Sn) until a residue of oxygen, nitrogen, and other trace elements remain. The corresponding plasma state element is extracted into a separation arrangement.

In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

A system and method of generating greater ionization using a magnetic venturi.

A system for controlling plasma uniformity according to an embodiment includes a plasma generator configured to generate plasma by applying pulsed power to a plasma source gas, an ion supply unit connected to the plasma generator and configured to receive and accommodate the plasma generated by the plasma generator, a plurality of segmented electrodes positioned inside or below the ion supply unit and configured to be electrically isolated from each other and individually biased at voltages, and a controller configured to control the amount of supply of ions moving from the ion supply unit to the plurality of segmented electrodes.