A beam equipment controlling method is provided. The method includes: proton beam regulatory steps, including: generating a first proton beam after confirming that the generating conditions are met, and marking the proton beam regulatory steps as completed after confirming that the first proton beam meets the specifications; neutron beam regulatory steps, including: generating a first neutron beam after confirming that the proton beam regulatory steps are completed and the generating conditions are met, confirming that the first neutron beam meets specifications, and marking the neutron beam regulatory steps as completed after turning off the cyclotron system; and treatment regulatory steps, including: generating a second neutron beam after confirming that the neutron beam regulatory steps are completed and the treatment-beam generating conditions are met, confirming that the second neutron beam meets treatment needs; and marking the treatment regulatory steps as completed after turning off the cyclotron system.

What is shown is a cyclic accelerator for accelerating charge carriers. The cyclic accelerator includes a charge carrier source configured to generate free charge carriers, a vacuum chamber configured to receive the free charge carriers, wherein the vacuum chamber is produced by means of MEMS technology, and wherein at least a main surface region of the vacuum chamber has a semiconductor material. In addition, the cyclic accelerator has electrodes configured to accelerate the free charge carriers in the vacuum chamber by means of an alternating current field, and a magnetic field generator configured to generate a magnetic field perpendicularly to the direction of movement of the charge carriers.

System includes a target assembly having a production chamber. The target assembly includes an electrode and a conductive base exposed to the production chamber. The target assembly has fluidic ports that provide access to the production chamber. The system also includes a fluidic-control system having a storage vessel and fluidic lines that connect to the fluidic ports. The storage vessel and the production chamber are in flow communication through at least one of the fluidic lines. The system also includes a power source that is configured to be electrically connected to the electrode and the conductive base. The production chamber, the electrode, and the conductive base form an electrolytic cell when an electrolytic solution is disposed in the production chamber. The power source is configured to apply voltage to the electrode and the conductive base to deposit a solid target along conductive base.

Cyclotron includes an acceleration chamber, a vacuum system, an ion source system, and a control system that is configured to determine at least one operating parameter as a particle beam is directed along a beam path of the cyclotron. The control system is configured to decrease a supply of the charged particles for the particle beam based on the at least one operating parameter. The particle beam continues after decreasing the supply of the charged particles. The control system is also configured to increase the supply of the charged particles for the particle beam after a predetermined time period or in response to determining that an amount of gas molecules has reduced based on the at least one operating parameter.

The accelerator includes a circular vacuum container which contains a circular return yoke. With respect to the central axis of the vacuum container, an incidence electrode is arranged towards the entrance of a beam emission path inside of the return yoke. Inside of the return yoke, electrodes are arranged radially from the incidence electrode in the periphery of the incidence electrode. Recesses are arranged alternately with the electrodes in the circumferential direction of the return yoke. In the vacuum container, an orbit-concentric region is formed in which multiple beam orbits centered on the incidence electrode are present, and, in the periphery of said region, an orbit-eccentric area is formed in which multiple beam orbits eccentric to the incidence electrode are present. In the orbit-eccentric region, the beam orbits between the incidence electrode and the entrance to the beam emission path are denser.

In an embodiment of the invention there is a cyclotronic actuator. The actuator is defined by having a high-voltage plasma driver connected to a first electrode. The first electrode is surrounded by a dielectric material. A second electrode is grounded and placed away from the first electrode, such that a plasma arc is formed between the pair of electrodes when the high-voltage plasma driver is activated. A ring magnet surrounding the second electrode is configured to introduce a magnetic field locally to the plasma arc. The plasma arc will then discharge in a radial direction. The magnet creates a local magnetic field oriented vertically in a direction parallel to the axisymmetric orientation of the first and second electrodes to create a Lorentz Force. The force causes the plasma arc to move in a tangential direction and causes the plasma arc to discharge out in a circular pattern.

A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

A target carrier assembly includes a housing, a target, and a collimator. The housing includes a collimator compartment and a target compartment divided by a vacuum window foil, the collimator being removably disposed within the collimator compartment, and the target being disposed within the target compartment. The collimator compartment is attached to a cyclotron beam line in the irradiation position, and the target compartment is in fluid communication with a cooling fluid supply line and a cooling fluid return line in the irradiation position. The target is cooled by the cooling fluid from the cooling fluid supply line. The collimator directs a particle beam from the cyclotron beam line to irradiate the target and includes a beam entry diameter and a beam exit diameter. The collimator is in thermal contact with the collimator compartment.

Provided is a variable energy and miniaturized accelerator. It is impossible to change the energy of the extraction beam in the related cyclotron or to miniaturize an accelerator in the related synchrotron. The accelerator includes a pair of magnets which form a magnetic field therebetween; an ion source which injects ions between the magnets; an acceleration electrode which accelerates the ions; and a beam extraction path which extracts the ions to the outside. A plurality of ring-shaped beam closed orbits formed by the pair of magnets, in which the ions of different energies respectively circulate, are aggregated on one side. The frequency of the radiofrequency electric field fed to the ions by the acceleration electrode is modulated by the beam closed orbits.

A device for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field along a curved or angled main path in a two-dimensional electron gas or in a thin superconducting layer, so that a different presence density is produced at electrical connections.