Patent classifications
H05H2242/10
HIGH POWER CONVERTER TARGET ASSEMBLY, RELATED FACILITY AND METHOD TO PRODUCE BREMSSTRAHLUNG FOR PHOTONUCLEAR REACTIONS
A facility for the production of radionuclides based photonuclear irradiation, comprising: an electron accelerator (1), producing an electron beam (2); a converter target assembly (21) with a converter target (20) that converts the electron beam (2) to Bremsstrahlung photons (15); a production target (17), irradiated by the Bremsstrahlung photons (15) and thereby producing said radionuclides.
DAMAGED ACCELERATOR COOLING
A system for plugging leaks includes a freeze tube configured to be inserted into a cooling line, a coolant tank, a coolant pump configured to pump coolant from the coolant tank through the freeze tube, a reservoir, an inlet pump configured to pump cooling liquid from the reservoir into the cooling line through an inlet valve, and an outlet pump configured to pump heated cooling liquid out of the cooling line through an outlet valve to the reservoir.
Cooling plate assembly for plasma windows positioned in a beam accelerator system
A beam accelerator system operable to produce a medical isotope, including an ion accelerator that generates an ion beam; a low-pressure chamber; an anode adjacent and fluidly connected to the low-pressure chamber; a plasma window adjacent and fluidly connected to the anode; and a cathode housing adjacent and fluidly connected to the plasma window. The plasma window has a plurality of plates, each plate having an aperture that is aligned with an aperture in one or more adjacent plates to form a plasma channel. One or more plates in the plurality of plates includes a unitary plate having an aperture therein, and one or more cooling channels entering the unitary plate at a first side of the unitary plate and exiting the unitary plate at a second side of the unitary plate. The one or more cooling channels run through a thickness of the unitary plate.
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Device and method for fabricating ceramic reinforced composite coating based on plasma remelting and injection
A device and a method for fabricating a ceramic reinforced composite coating based on plasma remelting and injection. The device includes a plasma cladding assembly, a powder feeding assembly, a metal-based substrate, and a thermal infrared imager. The plasma cladding assembly comprises a plasma gun and a plasma generator. A plasma arc generated is used to heat the substrate and form a molten pool on the substrate. The powder feeding assembly comprises a powder feeder configured to feed ceramic particles to the molten pool through a powder feeding copper tube. The thermal infrared imager is configured to acquire an infrared image of the molten pool and acquire an optimal injection position of the ceramic particles according to the infrared image. The optimal injection position is a midpoint between a trailing edge of the plasma arc emitted on the substrate and a trailing edge of the molten pool.
CONTAINER FOR A SOLID TARGET MATERIAL AND CORRESPONDING IRRADIATION STATION FOR THE PRODUCTION OF A RADIOISOTOPE
A container for a solid target material and a radioisotope produced by proton beam irradiation of the solid target material, the container having: a well, which is suited to support on its own bottom wall a portion of solid target material; a support body, which extends along a longitudinal axis and has a seat for housing the well in such a way that the bottom wall is arranged transversely to the longitudinal axis; and a lid, which comprises a central portion having a degrader foil for degrading the proton beam and can be fitted on the support body so that the central portion is arranged in the well to retain the portion of solid target material on the bottom wall and that the degrader foil is arranged above the portion of solid target material.
REDUCED FORM FACTOR PLASMA WINDOWS POSITIONED IN A BEAM ACCELERATOR SYSTEM
A beam accelerator system comprises: a beamline comprising a low-pressure chamber and an ion accelerator configured to generate an ion beam; a target chamber; and a plasma window assembly interposed between and fluidly connecting the beamline and the target chamber. The plasma window assembly comprises an anode and a plurality of cooling plates. Each cooling plate comprises an aperture having an aperture axis that is aligned with an aperture axis of an aperture in one or more adjacent cooling plates to form a plasma channel. One or more cooling plates of the plurality of cooling plates is a cathode plate comprising at least one cathode.
COOLING PLATE ASSEMBLY FOR PLASMA WINDOWS POSITIONED IN A BEAM ACCELERATOR SYSTEM
A beam accelerator system operable to produce a medical isotope, including an ion accelerator that generates a high-energy ion beam; a low-pressure chamber; an anode adjacent and fluidly connected to the low-pressure chamber; a plasma window adjacent and fluidly connected to the anode; and a cathode housing adjacent and fluidly connected to the plasma window. The plasma window has a plurality of plates, each plate having an aperture that is aligned with an aperture in one or more adjacent plate to form a plasma channel. One or more plate in the plurality of plates includes a unitary plate having an aperture therein, and one or more cooling channels entering the unitary plate at a first side of the unitary plate and exiting the unitary plate at a second side of the unitary plate. The one or more cooling channels run through a thickness of the unitary plate.
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.