A method for repetitive tuning of a matching network in a radio frequency plasma processing device, the method including detecting a condition within the matching network and determining if the condition is a known condition for the matching network. Also, finding a prior solution and to the condition when the condition is the known condition for the matching network; and replicating the prior solution for the condition in the matching network.

Example systems have a defrost system that can receive a first RF signal at a first frequency to defrost a load. An air treatment device can receive a second RF signal at a second frequency and perform an air treatment process. An RF signal source has a power output, and a switching arrangement selectively electrically connects the defrost system and the first air treatment device to the power output of the RF signal source. A controller can electrically connect one of the defrost system and the first air treatment device to the power output of the RF signal source. When the defrost system is electrically connected, the RF signal source outputs the first RF signal at the first frequency, and when the first air treatment device is electrically connected, the RF signal source outputs the second RF signal at the second frequency.

Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

The present disclosure relates to a system and method for continuously supplying negative ions using multi-pulsed plasma sources. The system includes a plurality of plasma generators each to generate plasma by applying pulsed power to the electronegative gas from a gas source; a negative ion supply unit connected to the plasma generators to receive the plasmas transferred therefrom and to continuously supply ions; and a controller connected to the plurality of plasma generators and configured to control characteristics of the pulsed powers delivered to the respective plasma generators and to adjust phase shift associated with the pulsed power envelopes. By adjusting the phase shift, the controller enables a plasma in one of the plasma generators to be in an after-glow state when a plasma in another plasma generator is in an active-glow state.

The high-frequency amplifier assembly for a high-frequency generator, in particular for a high-frequency generator for operating a plasma generator, is provided with a signal generator for generating a high-frequency signal; a first amplifier transistor for amplifying the signal generated by the signal generator; an output terminal for outputting the amplified signal to an external load; an input network arranged between the signal generator and the first amplifier transistor for providing the high-frequency signal at the input of the amplifier transistor; an output network arranged between the amplifier transistor and the external load for providing a desired load impedance for the amplifier transistor; and an electronic voltage-limiting assembly arranged at the output terminal for limiting the output voltage at the output terminal.

A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. A the first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.

A method of forming metal nanoparticles includes applying a substance to an area of interest, applying cold plasma to the area of interest, and synthesizing nanoparticles from the substance using the cold plasma in the area of interest, wherein the substance is a solution that contains metal ions, and the nanoparticles synthesized are metallic in nature.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode; a second electrode opposing the first electrode such that a bottom surface of the first electrode faces a top surface of the second electrode, the second electrode arranged so as to define a predetermined gap between the planar bottom surface of the first electrode and the planar top surface of the second electrode; a dielectric layer that is disposed on at least a part of the bottom surface of the first electrode having a relative permittivity between 2 and 500, and a thickness of 3 mm or less; and a power supply configured to supply electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first electrode and the second electrode, atmospheric pressure, low temperature plasma is generated.

A method for repetitive tuning of a matching network in a radio frequency plasma processing device, the method including detecting a condition within the matching network and determining if the condition is a known condition for the matching network. Also, finding a prior solution and to the condition when the condition is the known condition for the matching network; and replicating the prior solution for the condition in the matching network.

A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. The first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.