In order to ensure quality even when a sheet-like base material is thin while improving efficiency of production, a plasma treatment apparatus disclosed herein includes a plasma treatment chamber X for treating a sheet-like base material Z with plasma, a high-frequency antenna 3 for generating plasma in the plasma treatment chamber X, and a feeding mechanism 10 for feeding the sheet-like base material Z into the plasma treatment chamber X in a vertical direction.

Elastomeric components, such as a shoe outsole, are treated with a plasma application to clean and activate the elastomeric component. The application of plasma is controlled to achieve a sufficient surface composition change to enhance adhesion characteristics while not adversely physically deforming the elastomeric component. The plasma treatment is applied to increase carbonyl functional group concentrations within an altered region of the elastomeric component to within at least a range of 2%-15% of carbon atomic percentage composition. The cleaning and activation is controlled, in part, by ensuring a defined height offset range is maintained between the elastomeric component and the plasma source by a generated tool path. The elastomeric component may then be adhered, with an adhesive, to another component.

A plasma-treatment instrument for treating a surface with a dielectric-barrier plasma field generated between an electrode and the surface has a high a.c. voltage supplied to the electrode by a controller. The electrode forms with a dielectric surrounding the electrode a cylindrical roller that is rotatably supported in a grip housing. The plasma-treatment instrument has a shell surface and is capable of being rolled along the surface. The plasma-treatment allows an efficient and safe treatment of the surface by virtue of the fact that the electrode includes at least two partial electrodes arranged alongside one another at equal intervals from the shell surface and which are insulated from one another by the dielectric. The at least two partial electrodes are connected to different terminals of a source of high a.c. voltage.

A plasma CVD apparatus is provided. The plasma CVD apparatus includes: a chamber forming a plasma space; and a power introduction terminal arranged in a terminal insertion hole that extends through a wall of the chamber. The power introduction terminal includes an insulator having a through hole and a rod-like electrical conductor inserted in the through hole. One end of the conductor is arranged in the chamber and the other end of the conductor is electrically connected to a power source that supplies power into the chamber. A gap between an inner wall of the insulator and the rod-like electrical conductor is less than 2 mm. A distance from one end of the insulator, which is arranged in the plasma space inside the chamber, to a contact point between the insulator and the conductor is greater than 10 mm.

A plasma source assembly for use with a processing chamber includes an inner RF feed connected to the inner edge of the electrode and an outer RF feed connected to the outer edge of the electrode. A capacitor is connected between the inner edge of the electrode and electrical ground to modulate the voltage of across the length of the electrode.

In order to ensure quality even when a sheet-like base material is thin while improving efficiency of production, a plasma treatment apparatus disclosed herein includes a plasma treatment chamber X for treating a sheet-like base material Z with plasma, a high-frequency antenna 3 for generating plasma in the plasma treatment chamber X, and a feeding mechanism 10 for feeding the sheet-like base material Z into the plasma treatment chamber X in a vertical direction.

The adhesiveness of a treatment target made of a fluorine-based hard-to-adhere material is improved. A process gas containing any one or two or more among carbon monoxide, carbon dioxide, hydrogen, water vapor, ethanol, propanol, hexanol, ethylene glycol, and ammonia is supplied from a process gas supply unit 10 to a plasma generation unit 20. In the plasma generation unit 20, the process gas is activated by plasma and is brought into contact with a treatment target 9, and through a reaction caused by the contact, the residual ratio of fluorine atoms on a surface of the treatment target 9 is adjusted to 60% or less of that before the contact, and any one among a carbon atom, a hydrogen atom, and an oxygen atom, or a molecule containing one or more of these atoms is provided to the surface of the treatment target.

Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

A plasma generation device and/or a plurality of plasma generation modules are provided. Responsive to a first plasma generation module of the plurality of plasma generation modules being attached to the plasma generation device, the plasma generation device is configured to supply a first voltage to a first electrode of the first plasma generation module and conduct process gas from a tank to the first plasma generation module in order to generate a first type of plasma at the first plasma generation module. Alternatively and/or additionally, responsive to a second plasma generation module of the plurality of plasma generation modules being attached to the plasma generation device, the plasma generation device is configured to supply a second voltage to a second electrode of the second plasma generation module in order to generate a second type of plasma at the second plasma generation module.

A plasma-treatment instrument for treating a surface with a dielectric-barrier plasma field generated between an electrode and the surface has a high a.c. voltage supplied to the electrode by a controller. The electrode forms with a dielectric surrounding the electrode a cylindrical roller that is rotatably supported in a grip housing. The plasma-treatment instrument has a shell surface and is capable of being rolled along the surface. The plasma-treatment allows an efficient and safe treatment of the surface by virtue of the fact that the electrode includes at least two partial electrodes arranged alongside one another at equal intervals from the shell surface and which are insulated from one another by the dielectric. The at least two partial electrodes are connected to different terminals of a source of high a.c. voltage.