A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.

An alternating stack of insulating layers and spacer material layers is formed over a substrate. A staircase region having stepped surfaces is formed by patterning the alternating stack. Memory opening fill structures are formed in a memory array region, and support pillar structures are formed in the staircase region. Each of the memory stack structures includes a memory film and a vertical semiconductor channel. The support pillar structures include first support pillar structures and having a first maximum lateral dimension and second support pillar structures having a second maximum lateral dimension that is less than the first maximum lateral dimension and interlaced with the first support pillar structures. The sacrificial material layers are replaced with electrically conductive layers. The second support pillar structures are positioned interstitially among the first support pillar structures and contact via structures that are formed on the electrically conductive layers to provide additional structural support.

Certain aspects of the present disclosure are generally directed to non-volatile memory (NVM) and techniques for operating and fabricating NVM. Certain aspects provide a memory cell for implementing NVM. The memory cell generally includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, the second semiconductor region being disposed between and having a different doping type than the first and third semiconductor regions. The memory cell also includes a fourth semiconductor region disposed adjacent to and having the same doping type as the third semiconductor region, a first front gate region disposed adjacent to the second semiconductor region, and a first floating front gate region disposed adjacent to the third semiconductor region. In certain aspects, the memory cell includes a back gate region, wherein the second semiconductor region is between the first front gate region and at least a portion of the back gate region.

Certain aspects of the present disclosure are directed to a memory cell implemented using front and back gate regions. One example memory cell generally includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, the second semiconductor region being disposed between the first semiconductor region and the third semiconductor region. The memory cell may also include a front gate region disposed above the second semiconductor region, a floating back gate region, a first portion of the floating back gate region being disposed below the second semiconductor region, and a non-insulative region disposed adjacent to the floating back gate region.

Devices and methods of forming a device are disclosed. The device includes a substrate defined with at least a device region. A multi-gate transistor disposed in the device region which includes first and second gates both having first and second gate sidewalls. The multi-gate transistor also includes first source/drain (S/D) regions disposed adjacent to the first gate sidewall of the first and second gate, a common second S/D region disposed adjacent to the second gate sidewall of the first and second gate. A negative capacitance element is disposed within the second gate to reduce total overlap capacitance of the transistor. An interlevel dielectric (ILD) layer is disposed over the substrate and covering the transistor. First and second contacts are disposed in the ILD layer which are coupled to the first and second S/D regions respectively.

Certain aspects of the present disclosure are directed to a memory cell implemented using front and back gate regions. One example memory cell generally includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, the second semiconductor region being disposed between the first semiconductor region and the third semiconductor region. The memory cell may also include a front gate region disposed above the second semiconductor region, a floating back gate region, a first portion of the floating back gate region being disposed below the second semiconductor region, and a non-insulative region disposed adjacent to the floating back gate region.

A three-dimensional memory device includes a plurality of alternating stacks of insulating layers and electrically conductive layers located over a substrate, clusters of memory stack structures vertically extending through a respective one of the alternating stacks, and bit lines electrically connected to an upper end of a respective subset of the vertical semiconductor channels. In one embodiment, a subset of the bit lines can include a respective multi-level structure. Each multi-level structure includes bit-line-level bit line segments and an interconnection line segment located at a different level from the bit-line-level bit line segments. In another embodiment, groups of alternating stacks can be alternately indented along a horizontal direction perpendicular to the bit lines to provide dielectric material portions located in lateral indentation regions. Metal line structures connecting contact via structures can extend parallel to bit lines to provide electrical connections between word lines and underlying field effect transistors.

A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.

A sensor device may include a substrate, and first and second semiconductor structures arranged over the substrate. The first semiconductor structure may be an ion-sensitive field effect transistor and may include a floating gate, and a sensing element electrically coupled to the floating gate. The second semiconductor structure may be capacitively coupled to the first semiconductor structure, and may include a first diffusion region and a second diffusion region having opposite polarity type dopants, and a channel region arranged therebetween. The second semiconductor structure may be configured to receive a bias voltage to tune an electrical characteristic of the first semiconductor structure through the first diffusion region and the second diffusion region and the channel region. In some embodiments, the substrate may be a crystalline-on-insulator substrate which may be coupled to a back gate bias to reduce an effective total capacitance of the ISFET and further improve the coupling ratio.

A single-gate non-volatile memory and an operation method thereof are disclosed, wherein the non-volatile memory has a single floating gate. The non-volatile memory disposes a transistor and a capacitor structure in a semiconductor substrate. The transistor has two ion-doped regions disposed at two sides of a conduction gate to function as a source and a drain and disposed in the semiconductor substrate. The widths of the source and the drain are differently, and the edge of the drain is utilized to serve as a capacitor to control the floating gate. The minimum control voltages and elements during writing are involved to greatly reduce the area, control lines and the cost thereof.