Spin orbit torque (SOT) devices with topological insulator (TI) and heavy metal insert are described. In an example, an integrated circuit structure includes a spin orbit coupling (SOC) interconnect including a TI material. A magnetic layer is above the SOC interconnect. An insert layer includes a heavy metal between and in contact with the TI material and the magnetic layer.

A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.

A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.

A layout pattern of a magnetoresistive random access memory (MRAM) includes a first diffusion region and a second diffusion region extending along a first direction on a substrate, a first contact plug extending along a second direction from the first diffusion region to the second diffusion region on the substrate, a first gate pattern and a second gate pattern extending along the second direction adjacent to one side of the first contact plug, and a third gate pattern and a fourth gate pattern extending along the second direction adjacent to another side of the first contact plug.

Provided are a magnetic film, a magnetoresistance effect element and a magnetic memory which take advantages of atop-pinned structure and a bottom-pinned structure, maintain perpendicular magnetic anisotropy of magnetic layers in a fixing layer and allow strong pinning even in an annealing treatment after a protective film is formed.

A fixing layer of a magnetic film has a basic configuration in which a first magnetic layer (21), a first non-magnetic layer (31), a first Pt layer (41), a second magnetic layer (22) disposed adjacent to each other in this order.

The magnetization directions of the first magnetic layer (21) and the second magnetic layer (22) are both a direction perpendicular to the film surface, and an antiferromagnetic coupling is formed between the first magnetic layer (21) and the second magnetic layer (22).

A gesture manipulation method and a gaming system are disclosed herein. The gesture manipulation method is suitable for an electronic apparatus including a touch sensor and means for displaying. The gesture manipulation method includes following steps. A gesture input is detected by the touch sensor when a visual card image is displayed on the means for displaying and the visual card image shows a back side of at least a playing card. When at least one contact point of the gesture input is detected to move along a specific pattern relative to the visual card image, a corresponding function is triggered or the visual card image is adjusted in response to the gesture input moved along the specific pattern.

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.

A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a first electrode upon a conductive contact of an underlying semiconductor device, forming a first vertical magnetoresistive random-access memory (MRAM) cell stack upon the first electrode, forming a spin-Hall-effect (SHE) layer above and in electrical contact with the MRAM cell stack, forming a protective dielectric layer covering a portion of the SHE layer, forming a second vertical MRAM cell stack above and in electrical contact with an exposed portion of the SHE layer, forming a second electrode above and in electrical contact with the second vertical MRAM cell stack, and forming a metal contact above and in electrical connection with the second electrode.

A method for manufacturing a magnetic memory device includes forming a magnetic tunnel junction layer that includes a first magnetic layer, a tunnel barrier layer, and a second magnetic layer sequentially stacked on a substrate. First line mask patterns are formed extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The magnetic tunnel junction layer is etched by a first ion-beam etch process using the first line mask patterns as an etch mask to form preliminary magnetic tunnel junctions. Second line mask patterns are formed extending in the second direction and spaced apart from each other in the first direction. The preliminary magnetic tunnel junctions are etched by a second ion-beam process using the second line mask patterns as an etch mask to form magnetic tunnel junctions.