A capacitor structure includes two electrodes arranged oppositely and a dielectric layer located between the two electrodes, wherein the dielectric layer includes at least two perovskite layers stacked; an amorphous layer is provided between every two adjacent perovskite layers; two outermost perovskite layers of the at least two perovskite layers are in contact with the two electrodes, respectively.

A capacitive photoresistor array having frequency-independent capacitance includes first and second electrodes and a composite material including a perovskite and a terpolymer. The composite material is sandwiched between the first electrode and the second electrode, and a capacitance of the array changes proportionally with a light intensity for visible light and is independent of light frequency due to a combination of the perovskite and the terpolymer.

A capacitive photoresistor array having frequency-independent capacitance includes first and second electrodes and a composite material including a perovskite and a terpolymer. The composite material is sandwiched between the first electrode and the second electrode, and a capacitance of the array changes proportionally with a light intensity for visible light and is independent of light frequency due to a combination of the perovskite and the terpolymer.

A metal-insulator-metal capacitor includes a bottom electrode, a dielectric layer, a superlattice layer, a silicon dioxide layer and a top electrode stacked from bottom to top. The superlattice layer contacts the dielectric layer. A silicon dioxide layer has a negative voltage coefficient of capacitance.

Quantum electron storage devices are provided. In some aspects, a device is provide with a working voltage of 50V or more, 90V or more, 100V or more, or from 90V to 150V. The device has an energy density of 300 Watt hours or more, 500 watt hours or more, or 1,000 watt hours or more per kilogram of quantum electron storage material at these working voltages. The device includes 1 or more layers of quantum electron storage material. A method of using the quantum electron storage devices includes a step of applying a working voltage of 50V or more, 90V or more, 100V or more, or from 90V to 150V to the device. The quantum electron storage devices described herein are particularly useful in laser weapons due to their high energy density and fast charge and discharge rates.

Quantum electron storage devices are provided. In some aspects, a device is provide with a working voltage of 50V or more, 90V or more, 100V or more, or from 90V to 150V. The device has an energy density of 300 Watt hours or more, 500 watt hours or more, or 1,000 watt hours or more per kilogram of quantum electron storage material at these working voltages. The device includes 1 or more layers of quantum electron storage material. A method of using the quantum electron storage devices includes a step of applying a working voltage of 50V or more, 90V or more, 100V or more, or from 90V to 150V to the device. The quantum electron storage devices described herein are particularly useful in laser weapons due to their high energy density and fast charge and discharge rates.

A semiconductor material and a multilayer semiconductor material are earth-conscious and are less harmful to living organisms. The semiconductor material has fibers containing, as a main component, a filament derived from at least any one of a wood material, a plant fiber (pulp), an animal, an alga, a microorganism and a product produced by a microorganism, and has N-type negative resistance. It is preferred that the fibers include bundles of cellulose nanofibers (CNFs), and the width of each of the bundles be 30 to 50 nm. It is also preferred that the fibers are fibers in which a plurality of hydroxy groups and a plurality of carbonyl groups be bound to cellulose.

A retinomorphic sensor is demonstrated employing organic semiconductors. The sensor produces an output voltage in response to changes in illumination, but zero output voltage under constant illumination. The device is stable for periods up to one hour, exhibits a decay constant tunable through choice of external resistor, with fastest response times below 10 s.

A retinomorphic sensor is demonstrated employing organic semiconductors. The sensor produces an output voltage in response to changes in illumination, but zero output voltage under constant illumination. The device is stable for periods up to one hour, exhibits a decay constant tunable through choice of external resistor, with fastest response times below 10 s.