To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals) in a pixel or a circuit, the direction of current flowing through the transistor is changed (inverted). That is, by changing the level of voltage applied to a first terminal and a second terminal (terminals serving as a source and a drain) every given period, the source and the drain are switched every given period. Specifically, in a portion which successively outputs signals having certain levels (e.g., L-level signals) in a circuit including a transistor, L-level signals having a plurality of different potentials (L-level signals whose potentials are changed every given period) are used as the signals having certain levels.

Disclosed are a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, and a structural unit represented by Chemical Formula 3, an organic semiconductor material and a thin film including the polymer, and an electronic device including the thin film:

##STR00001## In Chemical Formulas 1 to 3, the definitions of R.sup.1 to R.sup.6, L.sup.1 to L.sup.6, and * are as described in the specification.

Disclosed are a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, and a structural unit represented by Chemical Formula 3, an organic semiconductor material and a thin film including the polymer, and an electronic device including the thin film:

##STR00001## In Chemical Formulas 1 to 3, the definitions of R.sup.1 to R.sup.6, L.sup.1 to L.sup.6, and * are as described in the specification.

An electro-polarizable compound has the following general formula:

##STR00001## where Core1 is an aromatic polycyclic conjugated molecule having two-dimensional flat form and self-assembling by pi-pi stacking in a column-like supramolecule, which is tetrapirolic macro-cyclic fragment, R1 is an dopant group connected to Core1, m is number of R1 which is equal to 1, 2, 3 or 4, R2 is a substituent comprising one or more ionic groups, p is number of R2 which is equal to 0, 1, 2, 3 or 4. The fragment marked NLE containing the Core1 with at least one R1 has a nonlinear effect of polarization. Core2 is an electro-conductive oligomer self-assembling by pi-pi stacking in a column-like supramolecule, n is number of Core2 which is equal to 2, or 4, R3 is a substituent comprising one or more ionic groups, s is number of R3 which is equal to 0, 1, 2, 3 or 4. R4 is a non-polar resistive substituent, k is a number of R4 which is equal to 0, 1, 2, 3, 4, 5, 6, 7 or 8.

Painted circuit devices, methods, and systems are disclosed. In some implementations, painted circuit devices are created using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate and one or more paint layer applied to the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers can include a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

Provided are a novel organic polymer useful for forming an organic semiconductor and a use of the novel organic polymer. A compound represented by the following formula (Ia) is subjected to a coupling reaction to give an organic polymer:

##STR00001## wherein a ring A and a ring B represent an aromatic hydrocarbon ring or an aromatic heterocyclic ring, n denotes an integer of 0 or 1 to 6, R.sup.1 to R.sup.2+n represent a substituent (such as an alkyl group), a1 to a (2+n) denote an integer of 0 to 2, a ring C represents a benzene ring ortho-fused sequentially and nonlinearly to an adjacent benzene ring depending on the number of n, X represents a hydrogen atom, a halogen atom, a lithium atom, or MgX.sup.1 (wherein X.sup.1 represents a halogen atom).

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

Methods and devices for forming painted circuits using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate and one or more paint layers applied to the substrate where the one or more paint layers each form an electrical component of the painted circuit, and where the one or more paint layers includes a p-type hole conducting paint layer applied to the substrate, a photosensitized paint layer applied to the p-type hole conducing paint layer, an n-type electron conducting paint layer applied to the photosensitized paint layer, and a transparent protective paint layer applied to the n-type electron conducting paint layer.

A method of making a solid state semiconducting film. The method includes blending a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and fully conjugated semiconducting polymer. The resulting blend is subjected to a film making method to result is a semiconducting film. A solid state semiconducting film comprising a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and a fully conjugated semiconducting polymer, wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix. Devices made from these semiconductor films.

The invention relates to a ferroelectric memory device comprising at least one layer comprising a ferroelectric polymer, and at least two electrodes either side thereof, the ferroelectric polymer being of general formula P(VDF-X-Y), wherein VDF is vinylidene fluoride motifs, X is trifluoroethylene or tetrafluoroethylene motifs, and Y is motifs from a third monomer, the molar proportion of Y motifs in the polymer being less than or equal to 6.5%.