An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.

A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): ##STR00001## in the general formula (1), R.sup.1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R.sup.2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A.sup.1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.

The present specification relates to an organic transistor including an organic semiconductor layer including a compound, and a gas sensor to which the organic transistor is applied.

An organic thin film transistor comprises a base material, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and further comprises charge injection layers which are provided between the source electrode and a base material side layer of the source electrode and between the drain electrode and a base material side layer of the drain electrode and have a thickness that decreases in a direction opposite to a direction in which the source electrode and the drain electrode face each other on a side of the source electrode facing the drain electrode and a side of the drain electrode facing the source electrode, and is manufactured by scanning a metal layer with a laser so as to form the source electrode and the drain electrode, and dropwise-adding a solution which becomes the charge injection layers to a laser-scanned portion.

Disclosed are a compound represented by Chemical Formula 1A or 1B, an organic thin film including the same, a thin film transistor, and an electronic device.

##STR00001##

In Chemical Formula 1A or 1B, X.sup.1, X.sup.2, Ar.sup.1, R.sup.1 to R.sup.4, and n.sub.1 are the same as described in the detailed description.

A compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. The organic thin-film transistor contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof. ##STR00001##

An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

A carbon nanotube triode apparatus includes a plurality of Horizontally Aligned Single Wall Carbon Nano Tubes (HA-SWCNT disposed on an electrically insulating thermally conductive substrate. A first contact is disposed on the substrate and electrically coupled to a first end of the HA-SWCNT. A second contact is disposed on the substrate and separated from a second end of the HA-SWCNT by a gap. A gate terminal is coincident with a plane of the substrate.

An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10):

##STR00001##

in which X.sup.1 represents a nitrogen atom or CR.sup.a, and rings A to B each represent a specific nitrogen-containing ring; Y.sup.1 represents an oxygen atom, a sulfur atom, CR.sup.b.sub.2, or NR.sup.c; V.sup.1 represents NR.sup.d, an oxygen atom, a sulfur atom, or a selenium atom; R.sup.a to R.sup.d each represent a hydrogen atom or a substituent; R.sup.1 represents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.