A thermal transistor is provided. The thermal transistor includes a metallic thermal conductor, a non-metallic thermal conductor, and a thermal resistance adjusting unit. The metallic thermal conductor and the non-metallic thermal conductor are contact with each other to form a thermal interface. The thermal resistance adjusting unit is configured to generate an bias voltage U.sub.12 between the metallic thermal conductor and the non-metallic thermal conductor.

Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.

A method for manufacturing an organic semiconductor element includes a process of forming a first terminal on a main surface of a substrate, a process of forming a first electrode on the main surface, a process of forming an organic semiconductor layer on the first electrode, a process of forming a second electrode on the organic semiconductor layer, a process of forming a sacrificial layer in a predetermined region on the main surface, a process of forming a barrier layer on the main surface by an ALD method to cover the first terminal, the first electrode, the second electrode, the organic semiconductor layer, and the sacrificial layer, and a process of removing the sacrificial layer and a portion of the barrier layer that covers the sacrificial layer. The organic semiconductor layer and the sacrificial layer are apart from each other after the process of forming the barrier layer.

Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.

There is provided a compound which provides a semiconductor material. The compound is represented by General Formula (1)

##STR00001##

wherein Ar represents an aryl group which may have a substituent or a heteroaryl group which may have a substituent, and R.sup.1 represents an acyclic alkyl group having 1 to 20 carbon atoms wherein hydrogen atom in the alkyl group may be replaced by a halogeno group, a nitrile group or an aryl group, and CH.sub.2 in the alkyl group may be replaced by O, RC?CR, CO, OCO, COO, S, SO.sub.2, SO, NH, NR or C?C provided that, with respect to each of an oxygen atom, a sulfur atom and a nitrogen atom, the same atoms are not directly bonded to each other, wherein R represents an acyclic or cyclic alkyl group having 1 to 20 carbon atoms.

An object of the invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof. Another object is to provide a novel compound suitable for an organic semiconductor. Still another object is to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film. The organic semiconductor element according to the invention includes an organic semiconductor layer containing an organic semiconductor having a repeating unit represented by Formula 1. ##STR00001##

In the present invention, a composition comprising two types of thienothiophene compounds selected from the group consisting of the compounds indicated by formulas (1) to (4) (in formulas (1) to (4), either one of R.sub.1 and R.sub.2 represents an alkyl group, an aromatic hydrocarbon group having an alkyl group or a heterocyclic group having an alkyl group, and the other represents a hydrogen atom, an aromatic hydrocarbon group, a heterocyclic group or a substituent represented by formula (5) (in formula (5), R.sub.3 represents an aromatic hydrocarbon group or a heterocyclic group)) can form an organic thin film which is homogeneous over a large area, and an organic semiconductor device including the organic thin film is capable of exhibiting high mobility.

The purpose of the present invention is to provide a photosensitive resin composition for thin film transistors, a cured film of which generates an extremely small amount of an outgas, and which is capable of forming an insulating layer for thin film transistors having excellent drive performance. In order to achieve the above-described purpose, the present invention has the configuration described below. Namely, a photosensitive resin composition for thin film transistors, which contains (A) an alkali-soluble resin having an amide group and/or an imide group, (B) a photosensitive compound and (C) organic solvents, and wherein the content of an organic solvent having nitrogen atoms in the organic solvents (C) is 1% by mass or less relative to the total mass of the organic solvents.

Provided are: an organic thin film transistor element including an organic semiconductor layer that includes an organic semiconductor compound, in which a content of one kind or two or more kinds of atoms selected from the group consisting of Li, Na, P, K, Fe, Pd, Sn, B, Cl, Br, and I in the organic semiconductor layer is 300 to 700 ppm; an organic semiconductor film-forming composition used for forming the organic semiconductor layer of the element; a method of forming an organic semiconductor film using the composition; and an organic semiconductor film formed of the composition.

The present specification relates to an organic transistor including an organic semiconductor layer including a compound, and a gas sensor to which the organic transistor is applied.