A film comprising a polymer compound and a low molecular weight compound having carrier transportability, wherein the content of the low molecular weight compound is 5 to 40 parts by mass with respect to 100 parts by mass of the sum of the polymer compound and the low molecular weight compound, the diffraction intensity A specified by the following measuring method A is 3 to 50, and the intensity ratio (A/B) of the diffraction intensity A specified by the following measuring method A to the diffraction intensity B specified by the following measuring method B is 30 or less: (Measuring method A) the diffraction intensity A is the maximum diffraction intensity in a range of scattering vector of 1 nm.sup.1 to 5 nm.sup.1 in a profile obtained by an Out-of plane measuring method using a film X-ray diffraction method; (Measuring method B) the diffraction intensity B is the maximum diffraction intensity in a range of scattering vector of 10 nm.sup.1 to 21 nm.sup.1 in a profile obtained by an In-plane measuring method using a film X-ray diffraction method.

The present invention generally relates to nanoscale wires and tissue engineering. Systems and methods are provided in various embodiments for preparing cell scaffolds that can be used for growing cells or tissues, where the cell scaffolds comprise nanoscale wires. In some cases, the nanoscale wires can be connected to electronic circuits extending externally of the cell scaffold. Such cell scaffolds can be used to grow cells or tissues which can be determined and/or controlled at very high resolutions, due to the presence of the nanoscale wires, and such cell scaffolds will find use in a wide variety of novel applications, including applications in tissue engineering, prosthetics, pacemakers, implants, or the like. This approach thus allows for the creation of fundamentally new types of functionalized cells and tissues, due to the high degree of electronic control offered by the nanoscale wires and electronic circuits.

The present invention provides a gas sensor which exhibits high detection sensitivity and includes an organic transistor and an organic transistor. A gas sensor of the present invention includes a bottom-gate type organic transistor including a source electrode, a drain electrode, a gate electrode, a gate insulating layer, an organic semiconductor layer, and a receptor layer which is disposed between the gate insulating layer and the organic semiconductor layer and includes a compound that interacts with gas molecules which are a detection subject.

Some implementations described herein provide techniques and apparatuses for an integrated circuit device including a trench capacitor structure that has a merged region. A material filling the merged region is different than a material that is included in electrode layers of the trench capacitor structure. Furthermore, the material filling the merged region includes a coefficient of thermal expansion and a modulus of elasticity that, in combination with the architecture of the trench capacitor structure, reduce thermally induced stresses and/or strains within the integrated circuit device relative to another integrated circuit device having a trench capacitor structure including a merged region and electrode layers of a same material.

A film comprising a polymer compound and a low molecular weight compound having carrier transportability, wherein the content of the low molecular weight compound is 5 to 40 parts by mass with respect to 100 parts by mass of the sum of the polymer compound and the low molecular weight compound, the diffraction intensity A specified by the following measuring method A is 3 to 50, and the intensity ratio (A/B) of the diffraction intensity A specified by the following measuring method A to the diffraction intensity B specified by the following measuring method B is 30 or less: (Measuring method A) the diffraction intensity A is the maximum diffraction intensity in a range of scattering vector of 1 nm.sup.1 to 5 nm.sup.1 in a profile obtained by an Out-of plane measuring method using a film X-ray diffraction method; (Measuring method B) the diffraction intensity B is the maximum diffraction intensity in a range of scattering vector of 10 nm.sup.1 to 21 nm.sup.1 in a profile obtained by an In-plane measuring method using a film X-ray diffraction method.

The present invention generally relates to nanoscale wires and tissue engineering. Systems and methods are provided in various embodiments for preparing cell scaffolds that can be used for growing cells or tissues, where the cell scaffolds comprise nanoscale wires. In some cases, the nanoscale wires can be connected to electronic circuits extending externally of the cell scaffold. Such cell scaffolds can be used to grow cells or tissues which can be determined and/or controlled at very high resolutions, due to the presence of the nanoscale wires, and such cell scaffolds will find use in a wide variety of novel applications, including applications in tissue engineering, prosthetics, pacemakers, implants, or the like. This approach thus allows for the creation of fundamentally new types of functionalized cells and tissues, due to the high degree of electronic control offered by the nanoscale wires and electronic circuits.

A semiconductor sensor device for detecting an analyte including a semiconducting layer, one or more organic molecules in the semiconducting layer, and one or more receptor molecules, comprising a poly-cyanostilbene macrocycle, wherein the one or more receptors is embedded within or onto the semiconducting layer of the semiconductor sensor device. Also disclosed is a method of preparing the semiconductor sensor device including a step of coupling the one or more receptor molecules into or onto the semiconducting layer of the semiconductor sensor device, a dielectric surface, or an electrode surface. Also described is chemical sensing device including the semiconductor sensor device and other elements of a sensing device.

A semiconductor sensor device for detecting an analyte including a semiconducting layer, one or more organic molecules in the semiconducting layer, and one or more receptor molecules, comprising a poly-cyanostilbene macrocycle, wherein the one or more receptors is embedded within or onto the semiconducting layer of the semiconductor sensor device. Also disclosed is a method of preparing the semiconductor sensor device including a step of coupling the one or more receptor molecules into or onto the semiconducting layer of the semiconductor sensor device, a dielectric surface, or an electrode surface. Also described is chemical sensing device including the semiconductor sensor device and other elements of a sensing device.

A complex nanostructure, which includes a first nanostructure component having at least one aperture in a side thereof; at least one second nanostructure component having a first end and a second end, wherein the first end of each of the at least one second nanostructure is inserted through a corresponding one of the at least one aperture in the first nanostructure, thereby forming at least one junction. Embodiments of the complex nanostructure include a bifurcated nanostructure transistor constructed of linear carbon nanotubes, a multiplexer constructed of a circular carbon nanotube and multiple linear carbon nanotubes, and an information unfolder constructed of linear or a combination of linear and circular carbon nanotubes. The nanotubes may optionally be decorated with genetic material such as single-strand or double-strand human DNA segments and/or may be modified by e-beam or ozone gas to add defects into the nanotubes to alter electrical/functional characteristics.

A complex nanostructure, which includes a first nanostructure component having at least one aperture in a side thereof; at least one second nanostructure component having a first end and a second end, wherein the first end of each of the at least one second nanostructure is inserted through a corresponding one of the at least one aperture in the first nanostructure, thereby forming at least one junction. Embodiments of the complex nanostructure include a bifurcated nanostructure transistor constructed of linear carbon nanotubes, a multiplexer constructed of a circular carbon nanotube and multiple linear carbon nanotubes, and an information unfolder constructed of linear or a combination of linear and circular carbon nanotubes. The nanotubes may optionally be decorated with genetic material such as single-strand or double-strand human DNA segments and/or may be modified by e-beam or ozone gas to add defects into the nanotubes to alter electrical/functional characteristics.