Described herein is an electronic component that may include a substrate, wherein the substrate may include at least two electrodes, wherein the at least two electrodes are each spaced apart from each other on and/or within the substrate. When the electronic component is in a first operating state, an electrolytic material may be disposed at least in a spatial region between the at least two electrodes, wherein the electrolytic material comprises at least one polymerizable material. When the electronic device is in a second operating state, at least one electrical connection may be made between the at least two electrodes, wherein the at least one electrical connection comprises an electrically conductive polymer. The electrically conductive polymer may comprise one or more fiber structures, wherein the one or more fiber structures are in physical contact with the at least two electrodes.

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

A method for manufacturing an organic memory device is disclosed. According to one embodiment, the method comprises the steps of: forming a first electrode on a substrate; forming an organic active layer on the first electrode; and forming a second electrode on the organic active layer through an orthogonal photolithography technique using a fluorinated material.

A memory device includes a gate electrode, a gate insulating layer formed on the gate electrode, a tunneling insulating layer stacked on the gate insulating layer, a channel layer stacked on the tunneling insulating layer, and a source electrode and a drain electrode formed on the channel layer to be spaced apart from each other. The tunneling insulating layer suppresses tunneling of charges from any one of the channel layer and the gate electrode by a voltage applied to each of the gate electrode and the drain electrode, and a density of tunneled charges is set according to the voltage applied to the drain electrode to output and store multiple current levels.

The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition of matter useful as a current transport region in an organic semiconductor device comprises a semiconducting polymer; and means for accepting holes (e.g., a hole trapping compound) injected into the current transport region so as to impede conduction of the holes in the semiconducting polymer. This simple solution-processable method can improve the on and off current ratios (I.sub.ON/I.sub.OFF) of OFETs by up to three orders of magnitude. Moreover, the treatment yields tailored blends that can be used to fabricate complementary inverters with excellent gain and low-power characteristics.

An organic memresitor/memcapacitor comprises of two terminal electrodes, each electrode has a membrane made of nanostructure organic conducting polymer of cyclodextrin derivatives attached thereto. By self assembling of cross-linking copolymers forming conductive membranes and separated by a mobile dopant barrier dielectric material, one side of the membrane has structure formed flat horizontal nano-bridges with array larger vertical nanopores underneath the bridge; and another side of the electrode/membrane has a negative mobile dopant polymer network forming arrays nano-islands with the membrane thickness is one third of the opposite membrane to be feasible conducting “head-tail” biphase charge and discharge at wide range of frequencies, so called the low-to-high frequency switch embedded to effectively save energy and storage energy by utilizing functional groups mimicking the positive and negative isopotential poles active sites of the acetylcholinesterase (ACHE) gorge along strengthened by a hydrophobic reagent. This invention also disclosed a method to build an organic Memristor/Memcapacitor having no hydrophobic reagent applied to lining the ACHE gorge and hence it induced an electromagnetic field that was not able to have biphase charge/discharge in an organic media.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

Various embodiments provide a thin film transistor (TFT), a fabrication method thereof, and a display apparatus including the TFT. A carbon nanotube layer is formed over a substrate. The carbon nanotube layer includes a first plurality of carbon nanotubes. A plurality of gaps are formed through the carbon nanotube layer to provide a first patterned carbon nanotube layer. Carbon nanotube structures each including a second plurality of carbon nanotubes are formed in the plurality of gaps. The carbon nanotube structures have a carrier mobility different from the first patterned carbon nanotube layer, thereby forming an active layer for forming active structures of the thin-film transistor.