A semiconductor memory device of an embodiment includes a semiconductor layer, a gate electrode, and a charge storing layer provided between the semiconductor layer and the gate electrode. The charge storing layer includes polyoxometalates that contain copper (Cu) and tungsten (W).

When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a conductive layer occupying a large area included in the memory circuit portion, and thus, power saving can be achieved. In addition, the memory circuit portion and the coiled antenna portion are disposed by being stacked together, and thus, it is possible to use a space efficiently. Therefore, downsizing can be realized.

The present invention relates to a compounds of formula I

R.sup.1-(A.sup.1-Z.sup.1).sub.r—B.sup.1—Z.sup.L-A.sup.2-(Z.sup.3-A.sup.3).sub.s-G   (I)

in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

The present invention relates to diamondoid compounds of formula I

D.sup.1-Z.sup.D-(A.sup.1-Z.sup.1).sub.r-B.sup.1-(Z.sup.2-A.sup.2).sub.s-Sp-G   (I)

in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers (SAM), to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

An excitonic device comprises an exciton transmission line comprised of a row of molecules. Propagation of excitons is mediated by an exciton exchange interaction. The gate consists of a molecule “a” that interacts with a proximal molecule via a two-body exciton interaction. If the gate molecule is not excited, it does not couple to the transmission line thereby allowing incoming signals to propagate unimpeded. If the gate molecule is excited, signals are back scattered as a result of the two-body interaction between the exciton residing on “a” and the excitons on the transmission line. The ballistic exciton transistor has industrial applications that extend to at least fast optical switching, optical communication, exciton devices, and exciton-based information processing.

A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al.sub.2O.sub.3 layer. The insertion layer includes an Al.sub.2O.sub.3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al.sub.2O.sub.3 layer. The insertion layer includes an Al.sub.2O.sub.3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.