Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

The present invention relates to a compounds of formula I

R.sup.1-(A.sup.1-Z.sup.1).sub.r—B.sup.1—Z.sup.L-A.sup.2-(Z.sup.3-A.sup.3).sub.s-G   (I)

in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10.sup.4 A/cm.sup.2), a device on/off ratio >10, thin film quality, the ability to “lock” the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 Ω.Math.cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10.sup.16 switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.

The present invention relates to a method for forming nano-gaps in graphene. The method may include applying a voltage across a region of graphene such that a nano-gap which extends across the entire width of the graphene is formed, wherein the region across which the voltage is applied may include a point which is the narrowest in the region.

In some embodiments, a bioelectronic device includes an electrode, target proteins, and attachment mechanisms that immobilize the target proteins on the electrode, the attachment mechanisms comprising linker proteins that interface with the target proteins and attach the target proteins to the electrode.

Disclosed are an interstitially mixed self-assembled monolayer (ImSAM) that can be manufactured very easily by utilizing a novel method of manufacturing supramolecular alloys called “repeated surface exchange of molecules (ReSEM)”, maintain chemical functional groups exposed to the surface of conventional thin films and selectively improve stability without interfering with performance, and a method of manufacturing the same. The interstitially mixed self-assembled monolayers (imSAMs) remarkably enhance electrical stability of molecular-scale electronic devices without deterioration in functions and reliability, withstand a high voltage, and exhibit better stability than a single SAM while maintaining the performance of the prior art, thus being useful for a variety of technical fields using SAMs, especially electronics, organic light-emitting displays (OLEDs), solar cells, sensors, heterogeneous catalysts, frictional electricity, cell growth surfaces, and heat transfer control films.

An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self-assembly.

The present invention relates to polycyclic aromatic hydrocarbon-based compounds, for a molecular electronic device, enabling molecular rectification, and molecular electronic devices comprising a molecular layer formed by means of the compounds self-assembled on an electrode. The compounds according to the present invention can realize rectifying properties by being introduced between electrodes and thus enable a high rectification ratio by means of low voltage driving, and thus can be substituted for a silicon-based diode device and, more particularly, can be utilized for a wearable device, Bluetooth, an IoT enabling device and the like which require low voltage driving.

The present invention relates to a memory device comprising biocompatible polymer nanoparticles, and a manufacturing method therefor. The present invention can provide a memory device which can be more efficiently integrated in the organic semiconductor field when applied to a biocompatible electronic device, and can have excellent capacitance by being treated with a silane coupling agent. In addition, the method for manufacturing the memory device, according to the present invention, uses a solution process, and thus a memory device can be manufactured with a very simple method.

An electronic switching device, in particular tunnel junctions, containing an organic molecular layer for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, related to the field of random access non-volatile memristive memories (RRAM). Another aspect is a compound of formula I

##STR00001##

for use in a molecular layer. Also, the use of the molecular layer and processes for the production and operation of an electronic switching element and components based thereon.