A nanostructured cross-wire memory architecture is provided that can interface with conventional semiconductor technologies and be electrically accessed and read. The architecture links lower and upper sets of generally parallel nanowires oriented crosswise, with a memory element that has a characteristic conductance. Each nanowire end is attached to an electrode. Conductance of the linkages in the gap between the wires encodes the information. The nanowires may be highly-conductive, self-assembled, nucleic acid-based nanowires enhanced with dopants including metal ions, carbon, metal nanoparticles and intercalators. Conductance of the memory elements can be controlled by sequence, length, conformation, doping, and number of pathways between nanowires. A diode can also be connected in series with each of the memory elements. Linkers may also be redox or electroactive switching molecules or nanoparticles where the charge state changes the resistance of the memory element.

By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

A spin-selective conduction structure comprises a crystal having a monolayer of metal atoms between two layers of chiral organic molecules. Each metal atom is coupled to two chiral organic molecules, one at each layer, wherein a chirality of organic molecules in one of the two layers is the same as a chirality of organic molecules in another one of the two layers.

A molecular memory recording molecular polarization of a single-molecule electret, and the single-molecule electret includes a cluster skeleton 100 having a continuous hole 101 and a plurality of stable ionic sites 102a, 102b and a metal ion M. The molecular polarization is shown in a state in which the metal ion is included in the stable ionic site. The molecular polarization is changed by movement of the metal ion to the other hollow stable ionic site by application of an electric field. The recordkeeping time of the molecular memory in a temperature range of −100° C. to 100° C. based on the ion radius of the metal ion is 3.0×10.sup.−2 seconds to 9.1×10.sup.22 seconds. Based on the recordkeeping time, the molecular memory is used as any of a volatile memory, a non-volatile memory, and a storage class memory.

A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a π-conjugated molecule having a π-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.

Structures for an optoelectronic memory and related fabrication methods. A metal oxide layer is located on an interlayer dielectric layer. A layer composed of a donor/acceptor dye is positioned on a portion of the first layer.

A memristive device includes a biomaterial comprising protein nanowires and at least two electrodes in operative arrangement with the biomaterial such that an applied voltage induces conductance switching. An artificial neuron or an artificial synapse includes a memrisitive device with the electrodes configured to apply a pulsed voltage configured to mimic an action-potential input.

Disclosed are a series of photoisomeric compounds, preparation method therefor and device comprising the compounds, wherein a photoisomeric compound-graphene molecular junction device is formed by linking the photoisomeric compound to a gap of two-dimensional monolayer graphene having a nano-gap array via an amide covalent bond. When a single photoisomeric compound is bridged to the gap of the two-dimensional monolayer graphene having a nano-gap array, the devices have a reversible light-controlled switching function and a reversible electrically-controlled switching function. A molecular switch device prepared by the method can achieve a high reversibility and a good reproducibility. The number of light-controlled switching cycles can exceed 10.sup.4, and the number of electrically-controlled switching cycles can reach about 10.sup.5 or greater. Moreover, the above-mentioned reversible molecular switch device remains stable within a period of more than one year. In addition, flexible non-losable organic memory transistor devices and light-responsive organic transistor devices can be constructed using the above-mentioned series of photoisomeric compounds.

A molecular electronic device (10) includes a framework of polynucleotides (3), one or more molecular electronic components (4) and one or more electrical contacts (7). The molecular electronic components and the electrical contacts are each connected to the plurality of polynucleotides such that the molecular electronic components and the electrical contacts are located with respect to the framework and with respect to each other. This forms a coupling between the electrical contacts and the molecular electronic components.

The present invention relates to an electronic synaptic device and a method of manufacturing the same, and more specifically, to a human-friendly electronic synaptic device based on nanocomposites including a protein, and a method of manufacturing the same.